A novel FinFET with dynamic threshold voltage

Abstract

Higher on-current (I_dsat) and lower off-current (I_off) can be achieved through dynamic threshold voltage (V_th) in MOSFETs. The change in V_th with gate bias is usually achieved through the body effect by connecting the gate terminal to the substrate in MOSFETs with heavily doped substrates. In this paper, we report the presence of dynamic V_th even in FinFETs with undoped channels. In this case, the change in V_th is due to modulation of the cross-sectional area of current flow. For the same I_off, more than 10% increase in I_dsat can be achieved in the proposed structure.