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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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Organic nanocomposite sensor for detection of Escherichia coli 用于检测大肠杆菌的有机纳米复合传感器
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151202
Ashwini N. Mallya, P. Sowmya, Praveen C Ramamurthy
{"title":"Organic nanocomposite sensor for detection of Escherichia coli","authors":"Ashwini N. Mallya, P. Sowmya, Praveen C Ramamurthy","doi":"10.1109/ICEMELEC.2014.7151202","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151202","url":null,"abstract":"An organic nanocomposite-based sensor was fabricated to detect Escherichia coli (E. coli) in water. The organic molecule with receptor groups for detection was selected such that the receptor group would bind to the functional groups on the cell wall of the E. coli. The conductivity change of the sensor due to the interaction of E. coli is monitored. The sensor is tested for detecting E. coli cell concentrations of 109 CFU/ml to 108 CFU/ml. The morphology of the sensor film characterized using FESEM shows the presence of micron-size structures, the higher surface area for sensing resulting in a better response of the sensor.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130867920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Functionalised polyaniline nanowires: A prospective biosensing platform 功能化聚苯胺纳米线:一个有前景的生物传感平台
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151161
R. Gangopadhyay, A. Chowdhury, A. De
{"title":"Functionalised polyaniline nanowires: A prospective biosensing platform","authors":"R. Gangopadhyay, A. Chowdhury, A. De","doi":"10.1109/ICEMELEC.2014.7151161","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151161","url":null,"abstract":"In this work we have used functionalized polyaniline (PAn) nanowires for fabrication of a biosensing platform which was exploited for fabrication of three different biosensors. In one effort, we have immobilized single-stranded DNA oligonucletide (ssdA) on this platform and have monitored its combination with the complementary strand (ssdT) at a concentration as low as 10-18 M. Moreover we have immobilized glucose oxidase on this platform that could be used for amperometric detection of glucose in aqueous solution over a wide concentration range of 1μM-20mM. We could successfully immobilize Lamin A (LA) antibody on the platform and its response towards the Lamin A protein could be nicely demonstrated down to a concentration as low as 10 μm. Therefore, the efficiency of the general biosensing platform is established.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131640550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel partially insulated junctionless transistor for low power nanoscale digital integrated circuits 一种用于低功耗纳米级数字集成电路的新型部分绝缘无结晶体管
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151171
G. C. Patil, Vijaysinh H. Bonge, M. Malode, Rahul G. Jain
{"title":"A novel partially insulated junctionless transistor for low power nanoscale digital integrated circuits","authors":"G. C. Patil, Vijaysinh H. Bonge, M. Malode, Rahul G. Jain","doi":"10.1109/ICEMELEC.2014.7151171","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151171","url":null,"abstract":"In this paper, a novel device structure named as partially insulated (Pi-OX) junctionless transistor (JLT) is proposed and the simulated results below 20 nm have been compared with existing silicon-on-insulator (SOI) JLT. Further, drain-induced barrier lowering (DIBL), subthreshold swing (SS), on-state drive current (ION), off-state leakage current (IOFF), ION/IOFF ratio and static power dissipation (PSTAT) of the proposed Pi-OXJLT and SOIJLT has also been compared. It has been found that, IOFF, DIBL and SS in the case of proposed Pi-OXJLT are reduced by 57%, 17% and 10% respectively over the existing SOIJLT device. The fabrication flow of the proposed Pi-OXJLT is proposed.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126932560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
VLS growth of silicon nanowires in cold wall Cat-CVD chamber 冷壁Cat-CVD室中硅纳米线的VLS生长
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151169
Sanchar Acharya, A. Kottantharayil
{"title":"VLS growth of silicon nanowires in cold wall Cat-CVD chamber","authors":"Sanchar Acharya, A. Kottantharayil","doi":"10.1109/ICEMELEC.2014.7151169","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151169","url":null,"abstract":"Growth of silicon nanowires by Vapour-Liquid-Solid (VLS) method has been studied in a cold wall Catalytic Chemical Vapour Deposition (Cat-CVD) chamber. It has been found that the instrument can be used in two modes, Hot Wire Chemical Vapour Deposition (HWCVD) and Chemical Vapour Deposition (CVD). These modes are tested with two methods for the preparation of the catalyst nanoparticles, namely thermal annealing of catalyst thin film and chemical attachment of catalyst nanoparticles. Growth in HWCVD mode is faster but the nanowires have deformities like conical shape, short length and uncatalyzed silicon deposition on the substrate. Using the CVD mode with modified process parameters solves these problems. The resultant silicon nanowires are characterized by Scanning Electron Microscopy, Energy-dispersive X-ray spectroscopy and Transmission Electron Microscopy.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115146723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
2DEG behavior of AlGaN/GaN HEMTs on various transition buffers AlGaN/GaN hemt在不同过渡缓冲液上的deg行为
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151163
Manikant Singh, N. Mohan, R. Soman, Hareesh Chandrasaker, S. Raghavan
{"title":"2DEG behavior of AlGaN/GaN HEMTs on various transition buffers","authors":"Manikant Singh, N. Mohan, R. Soman, Hareesh Chandrasaker, S. Raghavan","doi":"10.1109/ICEMELEC.2014.7151163","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151163","url":null,"abstract":"We are reporting the 2DEG mobility and sheet carrier concentration behavior of AlGaN/GaN HEMT stacks that are grown on different kinds of transitions from AlN buffer to epi-GaN. The role of each transition in terms of interfacial roughness and epi-GaN crystallinity are discussed. Further, the observed material parameters are correlated with the HEMT 2DEG property. Enhancement in 2DEG mobility was observed from the stacks those exhibit low surface roughness irrespective of the scattering seen in HRXRD FWHMs. This results show that other than the dislocation reduction and crack free film, the low surface roughness is essential for a better confinement of 2DEG and an optimum carrier concentration.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129095231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET 硅锗沟道fet栅极诱发漏漏机制的建模
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151200
Vishal A. Tiwari, A. Scholze, R. Divakaruni, D. Nair
{"title":"Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET","authors":"Vishal A. Tiwari, A. Scholze, R. Divakaruni, D. Nair","doi":"10.1109/ICEMELEC.2014.7151200","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151200","url":null,"abstract":"Silicon-Germanium is used as an alternative channel material for pFET in high-k metal gate-first technologies for 32 nm and beyond. However, gate-induced drain leakage (GIDL) is significant at nominal bias due to band-to-band tunneling (BTBT) at the gate-to-drain overlap surface and gate sidewall junctions. In this work, the results of numerical simulation are compared with experimental results for SiGe channel pFET and the calibrated models are used to describe the GIDL mechanisms in the dominant region for various drain and gate bias voltages. The simulation results correspond well with the experimental data, illustrating that the models presented in this paper can be used to describe the GIDL mechanisms and help to reduce the overall leakage budget for low-leakage, high-threshold voltage (HVT) device designs.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124730562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Two-dimensional analytical model for threshold voltage of graded-channel SOI MOSFETs 梯度沟道SOI mosfet阈值电压的二维解析模型
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151178
Varun Goel, Sanjay Sharma, Sanjay Kumar, S. Jit
{"title":"Two-dimensional analytical model for threshold voltage of graded-channel SOI MOSFETs","authors":"Varun Goel, Sanjay Sharma, Sanjay Kumar, S. Jit","doi":"10.1109/ICEMELEC.2014.7151178","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151178","url":null,"abstract":"This paper presents a two-dimensional (2D) analytical model for threshold voltage of fully depleted graded-channel silicon-on-insulator (SOI) MOSFETs. The two-dimensional Poisson's equation is solved in different channel regions with parabolic approximation by using suitable boundary conditions. The effect of different device parameters on device performance has been studied. Results confirmed that a graded-channel structure gives better immunity against Short-Channel-Effects (SCEs) in comparison to conventional SOI MOSFETs. The accuracy of the model is verified by comparing the analytical model results with the simulation results obtained by commercially available two-dimensional device simulator, ATLAS.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124181436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Power requirements of sensing nodes and adequacy of piezoelectric energy harvesting 传感节点的功率要求和压电能量收集的充分性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151219
R. Sriramdas, Shreevar Rastogi, R. Pratap
{"title":"Power requirements of sensing nodes and adequacy of piezoelectric energy harvesting","authors":"R. Sriramdas, Shreevar Rastogi, R. Pratap","doi":"10.1109/ICEMELEC.2014.7151219","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151219","url":null,"abstract":"Sensing nodes are employed for intelligent ambient monitoring and information dissemination. The primary challenge in making a sensing node autonomous is the ability to power it continuously. The conventional method of powering these nodes through batteries has an associated drawback of periodic maintenance and replacement. Alternate methods of powering sensing nodes are gaining impetus with the advent of low power electronics. The use of piezoelectric harvesters is an alternative approach to power these sensing nodes. These harvesters innately convert the energy from the unused ambient vibration into electrical energy. The energy extractable from vibrations is characterized by the structure of the vibrating surface. We analyze a harvester as a dynamic vibration absorber mounted on a vibrating structure. The influence of mass ratio, damping ratio, and the number of harvesters on the energy transmitted to the harvesters is addressed. We also assess the power levels required by typical sensing nodes. Our analysis addresses the selection of a particular piezoelectric material, categorically, for a given sensing node. We find that the power required by typical sensing nodes can be easily fulfilled by arrays of harvesters. The current work addresses the concept of available energy from vibrations and the selection of appropriate harvesting configuration for a sensing node.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127219209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dopingless tunnel FET with a hetero-material gate: Design and analysis 具有异质材料栅极的无掺杂隧道场效应管:设计与分析
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151152
M. Ram, D. Abdi
{"title":"Dopingless tunnel FET with a hetero-material gate: Design and analysis","authors":"M. Ram, D. Abdi","doi":"10.1109/ICEMELEC.2014.7151152","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151152","url":null,"abstract":"We report a two-dimensional simulation study of a dopingless TFET with a hetero-gate dielectric. The energy band gap on the source side is modulated using a hetero-gate-dielectric in a dopingless TFET to increase the source-side tunneling rate. The use of a hetero-gate-dielectric, only on the source side, will ensure that the ambipolar current is not enhanced due to the drain-side tunneling. We demonstrate that the dopingless TFET with a hetero-gate dielectric exhibits an enhanced ON-state current and a reduced subthreshold swing when compared to a conventional dopingless TFET. Since a low thermal budget is required for fabricating the dopingless TFETs, our results indicate that high performance dopingless TFETs can be realized for low-power and low-cost applications using our approach.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130469957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Thermal stability of single layer pulsed — DC reactive sputtered AlOX film and stack of ICP ℄ CVD SiNX on AlOX for p-type c-Si surface passivation 单层脉冲直流反应溅射AlOX膜的热稳定性及ICP℄CVD SiNX在AlOX表面钝化
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151212
M. Bhaisare, S. Sandeep, A. Kottantharayil
{"title":"Thermal stability of single layer pulsed — DC reactive sputtered AlOX film and stack of ICP ℄ CVD SiNX on AlOX for p-type c-Si surface passivation","authors":"M. Bhaisare, S. Sandeep, A. Kottantharayil","doi":"10.1109/ICEMELEC.2014.7151212","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151212","url":null,"abstract":"High thermal stability is a requirement for thin films explored for solar cell applications. In this paper the thermal stability of single layer AlO<sub>X</sub> film deposited by pulsed - DC (p-DC) reactive sputter technique and a stack of AlO<sub>X</sub>/SiN<sub>X</sub> for surface passivation of p - type crystalline silicon (c-Si) is compared. The SiN<sub>X</sub> film of thickness of 70 nm, was deposited using inductively coupled plasma (ICP) - CVD technique. The single layer AlO<sub>X</sub> shows an effective surface recombination velocity (S<sub>eff</sub>) of approximately 44 cm. s<sup>-1</sup> after annealing in an optimized condition, while the stack shows a relatively poor S<sub>eff</sub> of 624 cm. s<sup>-1</sup> on p-type c-Si surface. The degradation of surface passivation by stack can be related to the decrease in number of total negative fixed oxide charges (Q<sub>f</sub>) from 6.5×10<sup>12</sup> to 1.8×10<sup>12</sup> cm<sup>-2</sup>, that leads to a decrease in field - effect passivation. Also the thermal stability of both were compared in terms of surface passivation for temperatures upto 700 °C, and no change in thermal stability is observed with the capping of the AlO<sub>X</sub> by SiN<sub>X</sub> film.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132044915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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