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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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Vertical nanowire transistor-based CMOS: VTC analysis 基于垂直纳米线晶体管的CMOS: VTC分析
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151187
S. Maheshwaram, S. Manhas, B. Anand
{"title":"Vertical nanowire transistor-based CMOS: VTC analysis","authors":"S. Maheshwaram, S. Manhas, B. Anand","doi":"10.1109/ICEMELEC.2014.7151187","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151187","url":null,"abstract":"In this paper, a detailed analysis of the voltage transfer characteristics of vertical nanowire transistor-based CMOS inverter is presented. We show that noise margins are strongly dependent on the source/drain series resistance, and that the extension lengths can be used as tuning parameters to control the noise margin and gains of the inverter.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115159832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optoelectronic properties of graphene silicon nano-texture 石墨烯硅纳米结构的光电特性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151132
J. Brahmanandam, M. Ajmalghan, R. Abhilash, D. Mahapatra, M. Rahaman, G. Hegde
{"title":"Optoelectronic properties of graphene silicon nano-texture","authors":"J. Brahmanandam, M. Ajmalghan, R. Abhilash, D. Mahapatra, M. Rahaman, G. Hegde","doi":"10.1109/ICEMELEC.2014.7151132","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151132","url":null,"abstract":"Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations predict the optical band gap is around 0.2 eV and the optical conductivity is identified to be 0.3 times the quantum conductance.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121186458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fiber Bragg Grating Tilt Meter 光纤布拉格光栅倾斜计
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151142
Sharath Umesh, Shikha Ambastha, Asokan Sundarrajan
{"title":"Fiber Bragg Grating Tilt Meter","authors":"Sharath Umesh, Shikha Ambastha, Asokan Sundarrajan","doi":"10.1109/ICEMELEC.2014.7151142","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151142","url":null,"abstract":"In this paper, we propose a novel methodology of real time dynamic tilt monitoring through the designed and developed Fiber Bragg Grating Tilt Meter (FBGTM). Based on the volumetric water pressure exerted from inside the chamber on the diaphragm over which the FBG sensor is bonded, the tilt angle of FBGTM can be estimated. An inclination platform is constructed to test the designed FBGTM in conjunction with a commercial inclinometer. The results obtained from both sensor methodologies are in good agreement with each other.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122862950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of traps on small signal equivalent circuit in AlGaN/GaN HEMTs 陷阱对AlGaN/GaN hemt中小信号等效电路的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151174
M. Mishra, Sudhir Kumar, S. K. Tomar, S. Vinayak, B. K. Sehgal
{"title":"Effect of traps on small signal equivalent circuit in AlGaN/GaN HEMTs","authors":"M. Mishra, Sudhir Kumar, S. K. Tomar, S. Vinayak, B. K. Sehgal","doi":"10.1109/ICEMELEC.2014.7151174","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151174","url":null,"abstract":"The presence of electrical traps in AlGaN/GaN HEMT devices can play a major role in determining the power performance of the device. In this work we have carried out measurements to understand the role of traps in these devices. The study has been carried out by comparing the Pulse I-V measurements and S parameter measurements, on the devices with knee walkout and without knee walkout. The changes in the small signal equivalent circuit of the devices have also been studied.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114203489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of free-standing PEDOT:PSS nanofiber mats using electrospinning 静电纺丝法制备独立式PEDOT:PSS纳米纤维垫
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151196
K. Khanum, S. Hegde, Praveen C Ramamurthy
{"title":"Fabrication of free-standing PEDOT:PSS nanofiber mats using electrospinning","authors":"K. Khanum, S. Hegde, Praveen C Ramamurthy","doi":"10.1109/ICEMELEC.2014.7151196","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151196","url":null,"abstract":"In this work, a free-standing nanofibers mat of conducting polymer, Poly(3,4-ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS) is fabricated. PEDOT:PSS solution is blended with widely studied water soluble polymers, poly vinyl alcohol (PVA) and poly ethylene oxide (PEO), and is electrospun. Electrospinning parameters such as applied voltage and flow rate are optimized and fibers of diameter 200-300 nm are obtained, as characterized by scanning electron microscopy. Further, ternary blends are prepared by increasing the PEDOT:PSS content with respect to PEO and PVA, and uniform fibers with diameter of less than 200 nm are obtained. Fiber mats are analyzed using contact angle measurement and change in hydrophilicity with respect to increase in PEDOT:PSS concentration is studied.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126423994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of NBE emission enhancement of ZnO nanorods by changing the surface property of ultrathin Ag interlayer 改变超薄银层表面特性对ZnO纳米棒NBE发射增强的研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151155
A. Pal, D. Mohan
{"title":"Study of NBE emission enhancement of ZnO nanorods by changing the surface property of ultrathin Ag interlayer","authors":"A. Pal, D. Mohan","doi":"10.1109/ICEMELEC.2014.7151155","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151155","url":null,"abstract":"Surface plasmon-enhanced near-band-edge (NBE) emission of ZnO nanorods (NRs) array was studied after growing on ultra-thin Ag film of mass thickness 1 nm. Prior to the growth, Ag films were annealed at 100 and 250 °C. Annealing at 100 °C lead to the formation of smaller size of Ag nanoparticles with higher particle number density facilitating the vertical growth of higher density of ZnO NRs with high aspect ratio. The observation of predominant (002) plane from X-ray diffraction confirmed the preferential growth of ZnO nanorods on Ag films. The shape, orientation, diameter and number particles density of ZnO NRs are investigated by scanning electron microscopy (SEM). The photoluminescence (PL) spectra reveals the enhancement of NBE emission of ZnO NRs due to the transfer of electrons from Ag to ZnO and the resonance coupling of surface plasmon energy with ZnO emission. The evolution of multiple, low intense side bands in visible rsgion are due to shallow trap levels. Moreover, the absence of broad defect level emission peak indicating the high optical quality of ZnO NRs which could be applicable for UV LEDs.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127689175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of different silicon nitride passivation recipes on the DC characteristics of AlGaN/GaN HEMTs 不同氮化硅钝化配方对AlGaN/GaN hemt直流特性的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151143
R. Laishram, Sunil Kumar, S. Dayal, R. Chaubey, R. Raman, B. K. Sehgal
{"title":"The effect of different silicon nitride passivation recipes on the DC characteristics of AlGaN/GaN HEMTs","authors":"R. Laishram, Sunil Kumar, S. Dayal, R. Chaubey, R. Raman, B. K. Sehgal","doi":"10.1109/ICEMELEC.2014.7151143","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151143","url":null,"abstract":"The changes in dc characteristics of AlGaN/GaN HEMT after ICP-CVD silicon nitride (SiNx) passivation using two different recipes were investigated. Room temperature Raman analysis was performed to determine the stress state of the AlGaN layer after SiNx passivation. The changes in the stress state of the device after passivation was correlated with the shift in threshold voltage and changes in drain current. DC measurement was used as a quick method to assess the drain current collapse. The degree of current collapse in the samples passivated with two different recipes is discussed in the light of the results, and hypothesis and explanations reported in the literature.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126165724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Growth of high quality GaN nanowalls on Si (111) surface 在Si(111)表面生长高质量GaN纳米壁
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151190
S. Shetty, S. M. Shivaprasad
{"title":"Growth of high quality GaN nanowalls on Si (111) surface","authors":"S. Shetty, S. M. Shivaprasad","doi":"10.1109/ICEMELEC.2014.7151190","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151190","url":null,"abstract":"In this article, we propose the formation of GaN nanowall morphology on Si (111) surface by varying nitrogen flux from 2, 4.5 and 6sccm in PA-MBE growth. The optical, structural and electrical properties of these films are investigated. Cathodo-luminescence data suggests that the nanowall network grown at 6sccm show high optical emission and high crystalline quality. The current-voltage (I-V) characteristics of the GaN films exhibit varying rectifying behavior at 1V with forward to reverse current ratios of 39, 155, 388 for the GaN layers grown at 2, 4.5 and 6 sccm while the reverse leakage current values are 1.2×10-3, 2.6×10-4 and 9×10-6 A respectively for these junctions. The good optical and electrical properties observed suggest that GaN/Si heterojunction grown at 6sccm nitrogen flow comprise of low defect density.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123200646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate 蓝宝石衬底上栅极后退火AlGaN/GaN hemt的电学特性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151173
S. Mahajan, Anushree Tomer, A. Malik, R. Laishram, V. R. Agarwal, A. Naik
{"title":"Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate","authors":"S. Mahajan, Anushree Tomer, A. Malik, R. Laishram, V. R. Agarwal, A. Naik","doi":"10.1109/ICEMELEC.2014.7151173","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151173","url":null,"abstract":"AlGaN/GaN HEMTs were post-gate-annealed at 300°C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconductance, gate leakage current and off-state breakdown voltage (Vboff) was observed with increase in annealing duration. This was correlated with surface/interface traps removal, leading to improvement in access region resistance between source-drain and gate drain regions.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123246665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Drain-side Gate-underlap I-MOS (DGI-MOS) transistor as a label-free biosensor for detection of charged biomolecules 漏侧栅极下盖I-MOS (DGI-MOS)晶体管作为无标记生物传感器，用于检测带电生物分子
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151213
N. Kannan, M. J. Kumar
{"title":"A Drain-side Gate-underlap I-MOS (DGI-MOS) transistor as a label-free biosensor for detection of charged biomolecules","authors":"N. Kannan, M. J. Kumar","doi":"10.1109/ICEMELEC.2014.7151213","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151213","url":null,"abstract":"Electronic devices are finding increasing application as biosensors for the label-free detection of biomolecules. These biosensors offer the advantage of fast detection and compatibility with existing CMOS processes that enable rapid commercialization, and achieve very low detection limits. A biosensor's sensitivity is one of the main factors determining its performance. The application of emerging steep sub-threshold devices as biosensors is being actively explored due to their ability to provide very high sensitivities. In this paper, we propose the application of a Drain-side Gate-underlap Impact-ionization MOS (DGI-MOS) transistor as a sensor for label-free detection of charged biomolecules. The DGI-MOS biosensor is implemented by introducing an underlap in the gate electrode over the channel region at the drain side. The underlap serves as the location for the immobilization of biomolecules. With TCAD simulations, we demonstrate the proposed DGI-MOS biosensor to have a high sensitivity to the presence of charged biomolecules. In addition, the threshold voltage (VT) shift observed due to the presence of biomolecules is observed to be significantly higher than the other reported steep sub-threshold device-based biosensors. We demonstrate that the DGI-MOS biosensor allows the underlap region length to be comparable with the gate electrode length, simplifying the manufacturing steps involved in creating the underlap region.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125297953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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