改变超薄银层表面特性对ZnO纳米棒NBE发射增强的研究

A. Pal, D. Mohan
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引用次数: 0

摘要

研究了ZnO纳米棒阵列在质量厚度为1 nm的超薄银膜上生长后的表面等离子体增强近带边发射特性。在生长之前,分别在100℃和250℃对Ag薄膜进行退火处理。在100℃下退火可以形成尺寸更小、颗粒数密度更高的银纳米颗粒,有利于高纵横比的高密度ZnO纳米颗粒的垂直生长。x射线衍射的优势面(002)证实了ZnO纳米棒在Ag薄膜上的优先生长。利用扫描电子显微镜(SEM)研究了ZnO核磁共振的形状、取向、直径和颗粒数密度。光致发光(PL)光谱显示,由于电子从Ag转移到ZnO以及表面等离子体能量与ZnO发射的共振耦合,ZnO核磁共振的NBE发射增强。可见区域内多个低强度侧带的演化是由浅圈闭水平引起的。此外,ZnO NRs没有宽缺陷能级发射峰,表明其光学质量高,可用于UV led。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of NBE emission enhancement of ZnO nanorods by changing the surface property of ultrathin Ag interlayer
Surface plasmon-enhanced near-band-edge (NBE) emission of ZnO nanorods (NRs) array was studied after growing on ultra-thin Ag film of mass thickness 1 nm. Prior to the growth, Ag films were annealed at 100 and 250 °C. Annealing at 100 °C lead to the formation of smaller size of Ag nanoparticles with higher particle number density facilitating the vertical growth of higher density of ZnO NRs with high aspect ratio. The observation of predominant (002) plane from X-ray diffraction confirmed the preferential growth of ZnO nanorods on Ag films. The shape, orientation, diameter and number particles density of ZnO NRs are investigated by scanning electron microscopy (SEM). The photoluminescence (PL) spectra reveals the enhancement of NBE emission of ZnO NRs due to the transfer of electrons from Ag to ZnO and the resonance coupling of surface plasmon energy with ZnO emission. The evolution of multiple, low intense side bands in visible rsgion are due to shallow trap levels. Moreover, the absence of broad defect level emission peak indicating the high optical quality of ZnO NRs which could be applicable for UV LEDs.
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