石墨烯硅纳米结构的光电特性

J. Brahmanandam, M. Ajmalghan, R. Abhilash, D. Mahapatra, M. Rahaman, G. Hegde
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引用次数: 0

摘要

硅上石墨烯和二氧化硅量子点是一种很有前途的光电材料。利用密度泛函方法,结合分子动力学方法估算了光带隙和光电导率。利用经典分子动力学模拟方法,对石墨烯硅纳米结构的规则重复单元胞进行了识别。电子计算预测光学带隙约为0.2 eV,光学电导率是量子电导率的0.3倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optoelectronic properties of graphene silicon nano-texture
Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations predict the optical band gap is around 0.2 eV and the optical conductivity is identified to be 0.3 times the quantum conductance.
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