基于垂直纳米线晶体管的CMOS: VTC分析

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151187

S. Maheshwaram, S. Manhas, B. Anand

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引用次数: 0

摘要

本文详细分析了基于垂直纳米线晶体管的CMOS逆变器的电压传递特性。结果表明，噪声裕度强烈依赖于源漏串联电阻，并且扩展长度可以作为调谐参数来控制逆变器的噪声裕度和增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Vertical nanowire transistor-based CMOS: VTC analysis

In this paper, a detailed analysis of the voltage transfer characteristics of vertical nanowire transistor-based CMOS inverter is presented. We show that noise margins are strongly dependent on the source/drain series resistance, and that the extension lengths can be used as tuning parameters to control the noise margin and gains of the inverter.

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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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