陷阱对AlGaN/GaN hemt中小信号等效电路的影响

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151174

M. Mishra, Sudhir Kumar, S. K. Tomar, S. Vinayak, B. K. Sehgal

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引用次数: 1

摘要

在AlGaN/GaN HEMT器件中，电阱的存在对器件的功率性能起着重要的决定作用。在这项工作中，我们进行了测量，以了解陷阱在这些装置中的作用。本研究通过对有膝关节与无膝关节的设备进行脉冲I-V测量和S参数测量的比较。对器件的小信号等效电路的变化进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of traps on small signal equivalent circuit in AlGaN/GaN HEMTs

The presence of electrical traps in AlGaN/GaN HEMT devices can play a major role in determining the power performance of the device. In this work we have carried out measurements to understand the role of traps in these devices. The study has been carried out by comparing the Pulse I-V measurements and S parameter measurements, on the devices with knee walkout and without knee walkout. The changes in the small signal equivalent circuit of the devices have also been studied.

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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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