蓝宝石衬底上栅极后退火AlGaN/GaN hemt的电学特性

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151173

S. Mahajan, Anushree Tomer, A. Malik, R. Laishram, V. R. Agarwal, A. Naik

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引用次数: 1

摘要

AlGaN/GaN hemt在300°C下栅极后退火2分钟或更长时间。研究了AlGaN/GaN HEMTs的直流特性与退火周期的关系。随着退火时间的延长，HEMT参数如漏极源饱和电流、跨导、栅漏电流和断态击穿电压(Vboff)均有所改善。这与去除表面/界面陷阱有关，从而改善了源漏区和栅极漏区之间的通道区电阻。

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Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate

AlGaN/GaN HEMTs were post-gate-annealed at 300°C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconductance, gate leakage current and off-state breakdown voltage (Vboff) was observed with increase in annealing duration. This was correlated with surface/interface traps removal, leading to improvement in access region resistance between source-drain and gate drain regions.

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来源期刊

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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