Design and simulation of a high performance dopingless p-tunnel field effect transistor

In this paper, we propose a novel p-type dopingless tunnel field effect transistor (DL-p-TFET). The proposed DL-p-TFET device does not use conventional ion implantation or diffusion for realizing source and drain regions; these regions are created by using metals of different work function, a charge plasma concept. It has been observed that by optimizing the source and gate electrode gap (Lgap, S) and oxide thickness under source electrode (Toxide, S) in the proposed DL-p-TFET device, better performance can be obtained in comparison to the conventional doped p-TFET (D-p-TFET). The 2D simulation study has shown a significant improvement in ON current (Ion), cutoff frequency (fT) and subthreshold slope (SS) in the proposed device in comparison to the conventional D-p-TFET. It is found observed that the ION, fT and SS in the proposed DL-p-TFET are increased by 156%, 2.5% and 133%, respectively, in comparison to the conventional D-p-TFET. Since the proposed device is dopingless, it is free from random dopant fluctuations issues and can be processed at low temperatures.