{"title":"了解低导通电压DACz聚合物二极管中电子能带的演化","authors":"S. Swathi, K. Ranjith, Praveen C Ramamurthy","doi":"10.1109/ICEMELEC.2014.7151179","DOIUrl":null,"url":null,"abstract":"In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4×10-6 m2/V.s, which is relatively high for a polymer material.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes\",\"authors\":\"S. Swathi, K. Ranjith, Praveen C Ramamurthy\",\"doi\":\"10.1109/ICEMELEC.2014.7151179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4×10-6 m2/V.s, which is relatively high for a polymer material.\",\"PeriodicalId\":186054,\"journal\":{\"name\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEMELEC.2014.7151179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes
In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4×10-6 m2/V.s, which is relatively high for a polymer material.
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