{"title":"悬浮单层石墨烯的片浓度和温度相关电阻率建模","authors":"D. Saha, S. Bhattacharya, S. Mahapatra","doi":"10.1109/ICEMELEC.2014.7151193","DOIUrl":null,"url":null,"abstract":"In this paper, we address a simplified physics-based analytical model for the temperature - as well as the sheet-concentration-dependent resistivity of the free-standing monolayer graphene sheet. The analytical solution is achieved through the formulation of the sheet-concentration as the function of the external current. To determine the temperature-and sheet-concentration-dependent resistivity of the suspended layer of graphene (SLG), we have utilized the Landauer formalism in the diffusive limit. Besides, the overall contribution of different scattering mechanisms has been calculated considering both the in-plane and the flexural phonons. The analytical model presented in this work is in good agreement with the available experimental data.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene\",\"authors\":\"D. Saha, S. Bhattacharya, S. Mahapatra\",\"doi\":\"10.1109/ICEMELEC.2014.7151193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we address a simplified physics-based analytical model for the temperature - as well as the sheet-concentration-dependent resistivity of the free-standing monolayer graphene sheet. The analytical solution is achieved through the formulation of the sheet-concentration as the function of the external current. To determine the temperature-and sheet-concentration-dependent resistivity of the suspended layer of graphene (SLG), we have utilized the Landauer formalism in the diffusive limit. Besides, the overall contribution of different scattering mechanisms has been calculated considering both the in-plane and the flexural phonons. The analytical model presented in this work is in good agreement with the available experimental data.\",\"PeriodicalId\":186054,\"journal\":{\"name\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEMELEC.2014.7151193\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of sheet-concentration and temperature-dependent resistivity of a suspended monolayer graphene
In this paper, we address a simplified physics-based analytical model for the temperature - as well as the sheet-concentration-dependent resistivity of the free-standing monolayer graphene sheet. The analytical solution is achieved through the formulation of the sheet-concentration as the function of the external current. To determine the temperature-and sheet-concentration-dependent resistivity of the suspended layer of graphene (SLG), we have utilized the Landauer formalism in the diffusive limit. Besides, the overall contribution of different scattering mechanisms has been calculated considering both the in-plane and the flexural phonons. The analytical model presented in this work is in good agreement with the available experimental data.
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