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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)最新文献

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Experimental study of boric acid diffused emitters for n-type c-Si solar cells n型c-Si太阳能电池用硼酸扩散发射体的实验研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151127
B. Singha, C. Solanki
{"title":"Experimental study of boric acid diffused emitters for n-type c-Si solar cells","authors":"B. Singha, C. Solanki","doi":"10.1109/ICEMELEC.2014.7151127","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151127","url":null,"abstract":"In this work, boric acid powder solution has been used as a dopant source for optimizing emitter sheet resistance values corresponding to temperature range 850°-900°C. High purity (99.999%), non-toxic and low-cost boron diffusion is found to be suitable for p or p+ emitters with minimum diffusion-induced defects. Formation of a boron-rich layer, which is considered as a major problem in B-diffusion is eliminated with introduction of controlled process steps. An increase of effective minority carrier lifetime is observed after the diffusion process. The measured Sun's Voc and Implied Voc for sheet resistances less than 100Ω/sq is in the range of 570-600 mV, without any optics-improving techniques, for Czochralski n-type c-Si wafers. This indicates the suitability of the use of boric acid as the dopant source for emitter formation in n-type c-Si solar cells.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130654712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire 在预氮化c-蓝宝石上生长的氮化镓纳米壁网络结构质量的改善
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151177
V. Thakur, S. Nayak, K. Nagaraja, S. M. Shivaprasad
{"title":"Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire","authors":"V. Thakur, S. Nayak, K. Nagaraja, S. M. Shivaprasad","doi":"10.1109/ICEMELEC.2014.7151177","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151177","url":null,"abstract":"In the present study, GaN nanowall network (NWN) structures are grown using rf-plasma assisted molecular beam epitaxy (PA-MBE) system under highly nitrogen rich conditions over nitrided and bare c-plane sapphire substrates. Nitridation is carried out prior to growth for two of the samples and its effect on the crystal quality of the resultant nanowall structure is studied and compared with the same structure grown on bare sapphire. It is found that nitriding the c-plane sapphire prior to growth results in an improvement of crystalline quality of the resulting nanowall as observed by the reduction in FWHM of (0002) XRC.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133462589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dispersion relation of surface magneto-plasmons 表面磁等离子体的色散关系
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151221
Deepika, P. Chauhan, A. Varshney, V. Sajal
{"title":"Dispersion relation of surface magneto-plasmons","authors":"Deepika, P. Chauhan, A. Varshney, V. Sajal","doi":"10.1109/ICEMELEC.2014.7151221","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151221","url":null,"abstract":"Surface plasmons are collective oscillations of free electrons, having electromagnetic fields localized at the metal-vacuum interface. Configuration of two metal surfaces separated by a vacuum region is used for the study. Surface plasma waves having amplitude maximum at the two metal-vacuum interfaces and minimum in the middle are investigated by deriving the relevant dispersion relation in the presence of external static magnetic field. By this dispersion relation, an analytical function for the wave vector in terms of the phase velocity and the cyclotron frequencies are established. Dispersion relation is compared by varyirng the direction and strength of static magnetic field Bs.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129991544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD 生长参数对LPCVD生长SiGe薄膜结晶度和应力的影响
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151158
M. Suresh, S. Penmetsa, P. Savitha
{"title":"Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD","authors":"M. Suresh, S. Penmetsa, P. Savitha","doi":"10.1109/ICEMELEC.2014.7151158","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151158","url":null,"abstract":"SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130078975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-axisymmetric oscillations of droplets in electrowetting-on-dielectric 介电润湿过程中液滴的非轴对称振荡
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151209
Shubhi Bansal, P. Sen
{"title":"Non-axisymmetric oscillations of droplets in electrowetting-on-dielectric","authors":"Shubhi Bansal, P. Sen","doi":"10.1109/ICEMELEC.2014.7151209","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151209","url":null,"abstract":"Water droplets actuated by alternating fields mostly show axisymmetric modes. Under certain actuation conditions, non-axisymmetric resonance modes grow at the cost of axisymmetric modes. Using high speed imaging, we studied the growth dynamics of these non-axisymmetric modes of water droplets actuated by AC electrowetting-on-dielectric (EWOD). It was observed that at certain frequencies the non-axisymmetric modes grew with increasing actuation voltage. After a critical voltage, the non-axisymmetric modes were observed to become dominant. These observations agree with a parametric oscillator. A theoretical model explaining the observed responses has been developed.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114499723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates 在n-Si衬底上生长的Pd/ZnO纳米线肖特基二极管的电学特性
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151207
D. Somvanshi, S. Jit
{"title":"Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates","authors":"D. Somvanshi, S. Jit","doi":"10.1109/ICEMELEC.2014.7151207","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151207","url":null,"abstract":"Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ~ 7561 at ± 2 V, barrier height ΦB, eff ~ 0.78 eV and ideality factor η ~ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung's method and Norde method.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122055282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth mechanism and electron spin resonance studies of Zn1−xNixO/NiO two-phase nanocomposite Zn1−xNixO/NiO两相纳米复合材料的生长机理及电子自旋共振研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151180
D. Joshi, D. Harish, S. Nayak, D. Roy, M. Qureshi, R. L. N. Saiprasad, T. Shiyani, D. Pamu, S. Thota
{"title":"Growth mechanism and electron spin resonance studies of Zn1−xNixO/NiO two-phase nanocomposite","authors":"D. Joshi, D. Harish, S. Nayak, D. Roy, M. Qureshi, R. L. N. Saiprasad, T. Shiyani, D. Pamu, S. Thota","doi":"10.1109/ICEMELEC.2014.7151180","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151180","url":null,"abstract":"Two-phase nanocomposites comprised of Zn<sub>1-x</sub>Ni<sub>x</sub>O/NiO (0.05 ≤ x ≤ 0.3) were grown by using sol-gel process with hydrated metal acetates as precursors. Thermal decomposition of the co-precipitated oxalate α-ZnNi(C<sub>2</sub>O<sub>4</sub>) yields wurtzite h.c.p. Zn<sub>1-x</sub>Ni<sub>x</sub>O and f.c.c. NiO together. The X-band electron spin resonance spectra provide the signatures of anisotropic spin interactions with long-range magnetic ordering at 300 K. The temperature variation (120 K ≤ T ≤ 300 K) of the resonance field H<sub>R</sub>(T) and line-width ΔH<sub>PP</sub>(T) depicts a clear anomaly across 140 K associated with the blocking/freezing effects and the contribution of additional surface anisotropy (K<sub>eff</sub>) present in the system. Both H<sub>R</sub>(T) and ΔH<sub>PP</sub>(T) follows the power-law variation δH<sub>R</sub> = (ΔH<sub>PP</sub>)<sup>n</sup> with n ≃ 2.13, as expected for partially oriented nanocrystallites.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122063995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A quick method to realize and characterize bimorph cantilevers 双晶悬臂梁的快速实现和表征方法
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151129
R. Prajesh, B. Shankar, Nishit Jain, A. Agarwal
{"title":"A quick method to realize and characterize bimorph cantilevers","authors":"R. Prajesh, B. Shankar, Nishit Jain, A. Agarwal","doi":"10.1109/ICEMELEC.2014.7151129","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151129","url":null,"abstract":"Bimorph cantilever-based thermal actuators are promising for numerous applications like micro-mirror arrays, etc. This paper presents a simple technique for fabricating bimorph cantilevers using a single photolithography process and a quick optical methodology for the characterization of such structures. A bimorph combination of Al-SiO2 has been realized where SiO2 cantilevers are first realized, followed by aluminum sputtering to make the desired bimorph structure. Silicon oxide cantilevers are defined using optical photolithography, silicon area exposed by etching SiO2 in buffered oxide etch (BOE) solution and structures are released by wet bulk micro-machining of silicon in 25% TMAH solution. The cantilever deflection is characterized in a temperature range of 24-56°C using external heating and the corresponding deflections recorded via 3D imaging. A 97 μm-long cantilever tip shows a deflection of ~3.7 μm, when its temeprature changes by 32°C, corresponding to an actuation of 2.1 degrees.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128932138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ab-initio study of doping versus adsorption in monolayer M0S2 单层M0S2掺杂与吸附的ab -从头算研究
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151215
P. Rastogi, Sanjay Kumar, S. Bhowmick, A. Agarwal, Y. Chauhan
{"title":"Ab-initio study of doping versus adsorption in monolayer M0S2","authors":"P. Rastogi, Sanjay Kumar, S. Bhowmick, A. Agarwal, Y. Chauhan","doi":"10.1109/ICEMELEC.2014.7151215","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151215","url":null,"abstract":"To modulate the conductivity of channel as well as for controlling threshold voltage of the device doping is required. Sometimes this doping can be unintentional via adsorption of impurities. We have found by ab-initio density functional theory calculations that K and Nb atoms change the system into n-type, and Br changes into p-type if adsorbed on monolayer of MoS2. Similarly Cl, V and P introduce mid-gap states/trap levels in the band gap for adsorption. In case of substitutional doping, it is found that P and Nb make monolayer MoS2 p-type if these elements replace the S atom and the Mo atom, and Cl makes it degenerate n-type if it replaces the S atom in monolayer MoS2.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124163361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Laser fired ohmic contacts in silicon using pulse modulated CW laser 用脉冲调制连续波激光器在硅中发射欧姆触点
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI: 10.1109/ICEMELEC.2014.7151214
Akash Kumar, S. Mondal, A. Soman, A. Antony
{"title":"Laser fired ohmic contacts in silicon using pulse modulated CW laser","authors":"Akash Kumar, S. Mondal, A. Soman, A. Antony","doi":"10.1109/ICEMELEC.2014.7151214","DOIUrl":"https://doi.org/10.1109/ICEMELEC.2014.7151214","url":null,"abstract":"This paper discusses a detailed approach to the optimization of laser-fired contacts for the rear surface-passivated p-type crystalline silicon solar cell. To obtain a proper ohmic contact, there are various parameters which should be taken into account while making LFCs, such as pitch, pulse length (or duty cycle ratio), laser output power and number of pulses. Optimization methodology for forming an ohmic laser-fired contact and the respective parametric values for the pulse modulated CW laser are reported.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124372559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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