{"title":"在n-Si衬底上生长的Pd/ZnO纳米线肖特基二极管的电学特性","authors":"D. Somvanshi, S. Jit","doi":"10.1109/ICEMELEC.2014.7151207","DOIUrl":null,"url":null,"abstract":"Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ~ 7561 at ± 2 V, barrier height ΦB, eff ~ 0.78 eV and ideality factor η ~ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung's method and Norde method.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates\",\"authors\":\"D. Somvanshi, S. Jit\",\"doi\":\"10.1109/ICEMELEC.2014.7151207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ~ 7561 at ± 2 V, barrier height ΦB, eff ~ 0.78 eV and ideality factor η ~ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung's method and Norde method.\",\"PeriodicalId\":186054,\"journal\":{\"name\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"volume\":\"186 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEMELEC.2014.7151207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates
Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ~ 7561 at ± 2 V, barrier height ΦB, eff ~ 0.78 eV and ideality factor η ~ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung's method and Norde method.
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