Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates

Abstract

Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ~ 7561 at ± 2 V, barrier height ΦB, eff ~ 0.78 eV and ideality factor η ~ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung's method and Norde method.