Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD

M. Suresh, S. Penmetsa, P. Savitha
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Abstract

SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.
生长参数对LPCVD生长SiGe薄膜结晶度和应力的影响
在不同的温度和压力下,利用LPCVD沉积SiGe薄层。为了使薄膜的拉伸应力最大化,研究了生长特性对薄膜成分、晶粒生长和结晶度的影响。正如预期的那样,在恒定的反应物气体比下,温度的影响最大,在更高的温度下,应力从压缩变为拉伸。在较高的温度和压力下制备出高结晶度和大晶粒尺寸的薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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