{"title":"生长参数对LPCVD生长SiGe薄膜结晶度和应力的影响","authors":"M. Suresh, S. Penmetsa, P. Savitha","doi":"10.1109/ICEMELEC.2014.7151158","DOIUrl":null,"url":null,"abstract":"SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.","PeriodicalId":186054,"journal":{"name":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD\",\"authors\":\"M. Suresh, S. Penmetsa, P. Savitha\",\"doi\":\"10.1109/ICEMELEC.2014.7151158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.\",\"PeriodicalId\":186054,\"journal\":{\"name\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEMELEC.2014.7151158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEMELEC.2014.7151158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD
SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.