不同钝化方式AlGaN/GaN hemt的反漏电流分析:一个案例研究

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE) Pub Date : 2014-12-01 DOI:10.1109/ICEMELEC.2014.7151172

Anushree Tomer, S. Dayal, Sunil Sharma, H. Arora, Sonalee Kapoor, D. S. Rawal, S. Vinayak

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引用次数: 1

摘要

采用电感耦合等离子体化学气相沉积(ICPCVD)和等离子体增强化学气相沉积(PECVD)两种不同的沉积技术，研究了SiNx钝化对AlGaN/GaN hemt栅反漏电流的影响。结果表明，PECVD SiNx膜器件的泄漏率高于ICPCVD SiNx膜器件。为了理解这种行为背后的机制，研究了两种钝化方案的普尔-弗伦克尔发射对栅极反向泄漏电流的作用。

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Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study

The role of SiNx passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiNx films exhibit higher leakage than devices with ICPCVD SiNx films. To understand the mechanism behind this behavior, the role of Poole-Frenkel emission on gate reverse leakage current for both the types of passivation schemes was investigated.

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2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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