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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width 极窄GAA硅纳米线mosfet中漏极电流变异性元件的宽度依赖性，宽度可达2nm
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-04
Zihao Liu, T. Mizutani, T. Saraya, M. Kobayashi, T. Hiramoto
{"title":"Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width","authors":"Zihao Liu, T. Mizutani, T. Saraya, M. Kobayashi, T. Hiramoto","doi":"10.7567/ssdm.2021.a-7-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122613313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Impact of Self-Heating Effect on Noise Margin and Propagation Delayof Complementary FET Inverter 自热效应对互补场效应管逆变器噪声裕度和传播延迟的影响
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-03
Songhan Zhao, Wangyong Chen, Linlin Cai, Gang Du
{"title":"The Impact of Self-Heating Effect on Noise Margin and Propagation Delayof Complementary FET Inverter","authors":"Songhan Zhao, Wangyong Chen, Linlin Cai, Gang Du","doi":"10.7567/ssdm.2021.a-7-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"462 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133582977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaN-on-Si Power Device Platform: Epitaxy, Device, Reliability and Application GaN-on-Si功率器件平台:外延、器件、可靠性和应用
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-01
Roy King-Yuen Wong
{"title":"GaN-on-Si Power Device Platform: Epitaxy, Device, Reliability and Application","authors":"Roy King-Yuen Wong","doi":"10.7567/ssdm.2021.d-7-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130723357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG 大规模阵列TEG对CAAC-IGZO场效应管阈值电压变异性的统计分析
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-8-03
Yuki - Ito, T. Hamada, Y. Ando, Masahiro Takahashi, T. Murakawa, H. Kunitake, Masaharu - Kobayashi, Kuo-Chang Huang, H. Yoshida, Miller Liao, Shou-Zen Chang, Shunpei Yamazaki
{"title":"Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG","authors":"Yuki - Ito, T. Hamada, Y. Ando, Masahiro Takahashi, T. Murakawa, H. Kunitake, Masaharu - Kobayashi, Kuo-Chang Huang, H. Yoshida, Miller Liao, Shou-Zen Chang, Shunpei Yamazaki","doi":"10.7567/ssdm.2021.a-8-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-8-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126331913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel ± 1.2 kV Bidirectional Blocking Si-GaN Monolithic Integrated Cascode FET 一种新型±1.2 kV双向阻断Si-GaN单片级联晶体管
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-02
Guofang Yang, Jiaqi Zhang, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Yi Hao
{"title":"A Novel ± 1.2 kV Bidirectional Blocking Si-GaN Monolithic Integrated Cascode FET","authors":"Guofang Yang, Jiaqi Zhang, Dazheng Chen, Jincheng Zhang, Chunfu Zhang, Yi Hao","doi":"10.7567/ssdm.2021.d-7-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131679206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor n极和ga极GaN MIS电容器栅绝缘子击穿和界面特性的比较研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-05
Takahiro Gotow, Tatsushi Suka, Yasuyuki Miyamoto
{"title":"Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor","authors":"Takahiro Gotow, Tatsushi Suka, Yasuyuki Miyamoto","doi":"10.7567/ssdm.2021.d-7-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"311 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123120911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts 具有双AlN/AlGaInN势垒层和选择性面积再生欧姆触点的高击穿电压al0.36 ga0.64 n沟道hfet
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-08
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
{"title":"High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts","authors":"Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi","doi":"10.7567/ssdm.2021.d-7-08","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-08","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133529730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-step mesa p-GaN gated anode diode for low-power rectification applications 用于低功率整流应用的两步台式p-GaN门控阳极二极管
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-03
Yuwei Zhang, Naotaka Iwata
{"title":"Two-step mesa p-GaN gated anode diode for low-power rectification applications","authors":"Yuwei Zhang, Naotaka Iwata","doi":"10.7567/ssdm.2021.d-7-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114645815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Density & High Drive Current Elongated SGT Transistor for Logic Circuit Having Process Compatibility with 1.5nm node SGT SRAM 用于逻辑电路的高密度高驱动电流细长SGT晶体管，具有与1.5nm节点SGT SRAM的工艺兼容性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-02
Ken'ichi Kanazawa, Yisuo Li, Tetsuo Izawa, Koji Sakui, G. Strof, Oskar Baumgartner, Gerhard Rzepa, M. Karner, Z. Stanojević, N. Harada
{"title":"High Density & High Drive Current Elongated SGT Transistor for Logic Circuit Having Process Compatibility with 1.5nm node SGT SRAM","authors":"Ken'ichi Kanazawa, Yisuo Li, Tetsuo Izawa, Koji Sakui, G. Strof, Oskar Baumgartner, Gerhard Rzepa, M. Karner, Z. Stanojević, N. Harada","doi":"10.7567/ssdm.2021.a-7-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115242642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching 电感耦合等离子体反应离子蚀刻GaN沟槽结构角形控制
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-07
S. Yamada, Takashi Ishida, Toshiyuki Nakamura, R. Kamimura, Jun Suda, T. Kachi
{"title":"Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching","authors":"S. Yamada, Takashi Ishida, Toshiyuki Nakamura, R. Kamimura, Jun Suda, T. Kachi","doi":"10.7567/ssdm.2021.d-7-07","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-07","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125809784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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