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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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High-Performance Amorphous InGaZnO FET as a Key Enabler for Low Thermal Budget (350OC) BEOL Monolithic 3-D Integration 高性能非晶InGaZnO FET是低热预算(350OC) BEOL单片3d集成的关键推手
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-8-02
Chun-Kuei Chen, Umesh Chand, Xinghua Wang, Zihang Fang, S. Hooda, Shih-Hao Tsai, A. Thean
{"title":"High-Performance Amorphous InGaZnO FET as a Key Enabler for Low Thermal Budget (350OC) BEOL Monolithic 3-D Integration","authors":"Chun-Kuei Chen, Umesh Chand, Xinghua Wang, Zihang Fang, S. Hooda, Shih-Hao Tsai, A. Thean","doi":"10.7567/ssdm.2021.a-8-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-8-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127185253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation Study on Memory Characteristics of IGZO-Channel FeFET from 2D Planer to 3D Vertical Structure for Channel Structure Engineering 沟道结构工程中igzo沟道ffet从二维平面到三维垂直结构的记忆特性仿真研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-8-04
Fei Mo, Xiaoran Mei, T. Saraya, T. Hiramoto, M. Kobayashi
{"title":"Simulation Study on Memory Characteristics of IGZO-Channel FeFET from 2D Planer to 3D Vertical Structure for Channel Structure Engineering","authors":"Fei Mo, Xiaoran Mei, T. Saraya, T. Hiramoto, M. Kobayashi","doi":"10.7567/ssdm.2021.a-8-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-8-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"45 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132531378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer 湿氧化钇夹层低温制备Ge MOS电容器
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-07
K. Yamamoto, Kento Iseri, Dong Wang, Hiroshi Nakashima
{"title":"Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer","authors":"K. Yamamoto, Kento Iseri, Dong Wang, Hiroshi Nakashima","doi":"10.7567/ssdm.2021.a-7-07","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-07","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131262856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications 采用单片CAAC-IGZO FET + Si CMOS FET堆栈实现超低(<1 nA/ Cell)电流的多态(>8)模拟存储单元的内存计算演示，用于高效人工智能应用
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-8-01
S. Ohshita, Hidefumi Rikimaru, K. Tsuda, Hiromichi Godo, Y. Kurokawa, Y. Ando, H. Sawai, Y. Yamane, Shunpei Yamazaki, Toru Nakura, H. Yoshida, Kuo-Chang Huang, Miller Liao, Shou-Zen Chang
{"title":"Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications","authors":"S. Ohshita, Hidefumi Rikimaru, K. Tsuda, Hiromichi Godo, Y. Kurokawa, Y. Ando, H. Sawai, Y. Yamane, Shunpei Yamazaki, Toru Nakura, H. Yoshida, Kuo-Chang Huang, Miller Liao, Shou-Zen Chang","doi":"10.7567/ssdm.2021.a-8-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-8-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131878541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enablement of Next Generation Nanosheet Technology 下一代纳米片技术的实现
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-01
Nicolas Loubet, C. Durfee, Julien Frougier, S. Mochizuki, Maruf Bhuiyan, Ruqiang Bao, Andrew Greene, Eric Miller, Indira Seshadri
{"title":"Enablement of Next Generation Nanosheet Technology","authors":"Nicolas Loubet, C. Durfee, Julien Frougier, S. Mochizuki, Maruf Bhuiyan, Ruqiang Bao, Andrew Greene, Eric Miller, Indira Seshadri","doi":"10.7567/ssdm.2021.a-7-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129541448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method 采用等离子体增强原子层沉积法制备了低界面态密度的SiO2/n-GaN MOS结构
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.d-7-06
Keito Aoshima, Noriyuki Taoka, M. Horita, Jun Suda
{"title":"SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method","authors":"Keito Aoshima, Noriyuki Taoka, M. Horita, Jun Suda","doi":"10.7567/ssdm.2021.d-7-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-7-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115601974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment TMA处理对Si0.8Ge0.2/SOI p- finfet性能的改善
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-05
Tsung-En Lee, Shao-Tse Huang, Chiung-Yi Yang, K. Toprasertpong, M. Takenaka, Yao-Jen Lee, Shinichi Takagi
{"title":"Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment","authors":"Tsung-En Lee, Shao-Tse Huang, Chiung-Yi Yang, K. Toprasertpong, M. Takenaka, Yao-Jen Lee, Shinichi Takagi","doi":"10.7567/ssdm.2021.a-7-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122387548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Attainment of Low Dit and Reliable High-Ge-Content Si1-xGex Gate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si 通过低温生长超薄外延硅获得低Dit和可靠的高锗含量Si1-xGex栅极堆栈
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI: 10.7567/ssdm.2021.a-7-06
H. Wan, Yi-Ting Cheng, Chao-Kai Cheng, Y. Hong, Tien-Yu Chu, Chien-Ting Wu, J. Kwo, Minghwei Hong
{"title":"Attainment of Low Dit and Reliable High-Ge-Content Si1-xGex Gate Stacks via Low-Temperature Grown Ultra-Thin Epitaxial Si","authors":"H. Wan, Yi-Ting Cheng, Chao-Kai Cheng, Y. Hong, Tien-Yu Chu, Chien-Ting Wu, J. Kwo, Minghwei Hong","doi":"10.7567/ssdm.2021.a-7-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-7-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134177753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Optical Pixel Structure for High Sensitivity in CMOS Image Sensor with 0.7μm Pixels 0.7μm像素CMOS图像传感器高灵敏度光学像元结构
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.a-6-04
Jonghoon Park, Taesung Lee, Yunji Jung, Junsung Park, Chunho Park, Taehan Kim, Yunki Lee, Bumsuk Kim, JungChak Ahn
{"title":"Novel Optical Pixel Structure for High Sensitivity in CMOS Image Sensor with 0.7μm Pixels","authors":"Jonghoon Park, Taesung Lee, Yunji Jung, Junsung Park, Chunho Park, Taehan Kim, Yunki Lee, Bumsuk Kim, JungChak Ahn","doi":"10.7567/ssdm.2021.a-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-6-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115489140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology Challenge and Opportunity of HfO2-based FeFET Memory 基于hfo2的ffet存储器的技术挑战与机遇
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.b-6-01
M. Kobayashi, Fei Mo, Jiawen Xiang, Jixuan Wu, T. Saraya, T. Hiramoto
{"title":"Technology Challenge and Opportunity of HfO2-based FeFET Memory","authors":"M. Kobayashi, Fei Mo, Jiawen Xiang, Jixuan Wu, T. Saraya, T. Hiramoto","doi":"10.7567/ssdm.2021.b-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.b-6-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125798312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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