Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.a-8-01

S. Ohshita, Hidefumi Rikimaru, K. Tsuda, Hiromichi Godo, Y. Kurokawa, Y. Ando, H. Sawai, Y. Yamane, Shunpei Yamazaki, Toru Nakura, H. Yoshida, Kuo-Chang Huang, Miller Liao, Shou-Zen Chang

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采用单片CAAC-IGZO FET + Si CMOS FET堆栈实现超低(<1 nA/ Cell)电流的多态(>8)模拟存储单元的内存计算演示，用于高效人工智能应用

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials

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