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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature 高温氧化/退火技术引入绝缘子上锗结构的高拉伸应变
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.a-4-02
Xueyang Han, Chia-Tsong Chen, Cheol-Min Lim, K. Toprasertpong, M. Takenaka, Shinichi Takagi
{"title":"Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature","authors":"Xueyang Han, Chia-Tsong Chen, Cheol-Min Lim, K. Toprasertpong, M. Takenaka, Shinichi Takagi","doi":"10.7567/ssdm.2021.a-4-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-4-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123266521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of Ultralow Invasive Opto-neural Mesh Probe withUpconversion Nanoparticles for Optogenetics 基于上转换纳米粒子的光遗传学微创光神经网探针的研制
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.g-5-03
Haruki Nagasaki, Fen Yang, Shimon Suzuki, H. Kino, T. Fukushima, Tetsu Tanaka
{"title":"Development of Ultralow Invasive Opto-neural Mesh Probe withUpconversion Nanoparticles for Optogenetics","authors":"Haruki Nagasaki, Fen Yang, Shimon Suzuki, H. Kino, T. Fukushima, Tetsu Tanaka","doi":"10.7567/ssdm.2021.g-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.g-5-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129960513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulation of reservoir computing with patterned nano-magnets 纳米磁体图案油藏计算的数值模拟
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.i-5-01
H. Nomura, K. Hon, Yuki Kuwabiraki, Kazuki Takahashi, M. Goto, R. Nakatani, Yoshishige Suzuki
{"title":"Numerical simulation of reservoir computing with patterned nano-magnets","authors":"H. Nomura, K. Hon, Yuki Kuwabiraki, Kazuki Takahashi, M. Goto, R. Nakatani, Yoshishige Suzuki","doi":"10.7567/ssdm.2021.i-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.i-5-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129021859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DC Characteristics of the p-NiOx/n-Ga2O3 Junction FETs Based on Heterointegrated Ga2O3-on-SiC by Ion Cutting Process 离子切割工艺制备p-NiOx/n-Ga2O3结fet的直流特性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.d-6-04
Haodong Hu, H. Gong, Wenhui Xu, Yibo Wang, T. You, G. Han, Jiandong Ye, Xin Ou, Yan Liu, Yi Hao
{"title":"DC Characteristics of the p-NiOx/n-Ga2O3 Junction FETs Based on Heterointegrated Ga2O3-on-SiC by Ion Cutting Process","authors":"Haodong Hu, H. Gong, Wenhui Xu, Yibo Wang, T. You, G. Han, Jiandong Ye, Xin Ou, Yan Liu, Yi Hao","doi":"10.7567/ssdm.2021.d-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-6-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129264221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Attoampere nanoelectrochemical measurements on a redox organic monolayer 氧化还原有机单层上的亚安培纳米电化学测量
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.g-5-02
S. Grall, Ivan Alic, Eleonora Pavoni, Teruo Fujii, Stefan Müllegger, Marco Farina, Nicolas Clement, Georg Gramse
{"title":"Attoampere nanoelectrochemical measurements on a redox organic monolayer","authors":"S. Grall, Ivan Alic, Eleonora Pavoni, Teruo Fujii, Stefan Müllegger, Marco Farina, Nicolas Clement, Georg Gramse","doi":"10.7567/ssdm.2021.g-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.g-5-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123390235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On-chip Leakage Current Variation Measurement Using Reference-free Current-to-Time Conversion 使用无参考电流-时间转换的片上泄漏电流变化测量
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.l-3-02
Mahfuzul Islam, Shogo Harada
{"title":"On-chip Leakage Current Variation Measurement Using Reference-free Current-to-Time Conversion","authors":"Mahfuzul Islam, Shogo Harada","doi":"10.7567/ssdm.2021.l-3-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.l-3-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121664760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improved Moisture Stability of Perovskite Solar Cells using Ionic Liquid Assisted-MAPbI3 Nanoparticle-Seeded Growth Approach 离子液体辅助mapbi3纳米粒子种子生长方法改善钙钛矿太阳能电池的水分稳定性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-6-02
M. Shahiduzzaman, Liang Wang, Masahiro Nakano, Makoto Karakawa, J. Nunzi, T. Taima
{"title":"Improved Moisture Stability of Perovskite Solar Cells using Ionic Liquid Assisted-MAPbI3 Nanoparticle-Seeded Growth Approach","authors":"M. Shahiduzzaman, Liang Wang, Masahiro Nakano, Makoto Karakawa, J. Nunzi, T. Taima","doi":"10.7567/ssdm.2021.f-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-6-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124297344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structures and Stability of GaN/ β-Ga2O3 Interface: A First-Principles Study GaN/ β-Ga2O3界面结构和稳定性:第一性原理研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.d-6-03
Fumiaki Hishiki, T. Akiyama, Takahiro Kawamura, T. Ito
{"title":"Structures and Stability of GaN/ β-Ga2O3 Interface: A First-Principles Study","authors":"Fumiaki Hishiki, T. Akiyama, Takahiro Kawamura, T. Ito","doi":"10.7567/ssdm.2021.d-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-6-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128045086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance SnS/h-BN heterostructure p-FET via Ti contact reaction 基于Ti接触反应的高性能SnS/h-BN异质结构p-FET
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-6-07
Yih-Ren Chang, T. Taniguchi, Kenji Watanabe, Tomonori Nishimura, K. Nagashio
{"title":"High performance SnS/h-BN heterostructure p-FET via Ti contact reaction","authors":"Yih-Ren Chang, T. Taniguchi, Kenji Watanabe, Tomonori Nishimura, K. Nagashio","doi":"10.7567/ssdm.2021.h-6-07","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-6-07","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125489455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Systematic Study on the Growth Direction of Grain Boundaries during Solidification of Multicrystalline Silicon:Effects of Grain Boundary Structure and Shape of the Solid-Liquid Interface 多晶硅凝固过程中晶界生长方向的系统研究:固液界面晶界结构和形状的影响
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-4-02
Y. Fukuda, K. Kutsukake, T. Kojima, N. Usami
{"title":"A Systematic Study on the Growth Direction of Grain Boundaries during Solidification of Multicrystalline Silicon:Effects of Grain Boundary Structure and Shape of the Solid-Liquid Interface","authors":"Y. Fukuda, K. Kutsukake, T. Kojima, N. Usami","doi":"10.7567/ssdm.2021.k-4-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-4-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125655576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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