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DC Characteristics of the p-NiOx/n-Ga2O3 Junction FETs Based on Heterointegrated Ga2O3-on-SiC by Ion Cutting Process

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI:10.7567/ssdm.2021.d-6-04
Haodong Hu, H. Gong, Wenhui Xu, Yibo Wang, T. You, G. Han, Jiandong Ye, Xin Ou, Yan Liu, Yi Hao
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离子切割工艺制备p-NiOx/n-Ga2O3结fet的直流特性
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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