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Structures and Stability of GaN/ β-Ga2O3 Interface: A First-Principles Study

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI:10.7567/ssdm.2021.d-6-03
Fumiaki Hishiki, T. Akiyama, Takahiro Kawamura, T. Ito
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GaN/ β-Ga2O3界面结构和稳定性:第一性原理研究
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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