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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Four-Terminal Polarization-Voltage Measurement Technique for Analyzing Polarization Characteristics of Ferroelectric FETs 分析铁电场效应管极化特性的四端极化电压测量技术
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.b-3-03
K. Toprasertpong, M. Takenaka, Shinichi Takagi
{"title":"Four-Terminal Polarization-Voltage Measurement Technique for Analyzing Polarization Characteristics of Ferroelectric FETs","authors":"K. Toprasertpong, M. Takenaka, Shinichi Takagi","doi":"10.7567/ssdm.2021.b-3-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.b-3-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125754258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stability and Robustness Evaluation for Poly-Si Resistors with Different Dopant Concentrations 不同掺杂浓度多晶硅电阻器的稳定性和鲁棒性评价
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-5-05
Mingte Lin, Y. C. King
{"title":"Stability and Robustness Evaluation for Poly-Si Resistors with Different Dopant Concentrations","authors":"Mingte Lin, Y. C. King","doi":"10.7567/ssdm.2021.k-5-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-5-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130795821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental Determination of Wavelength Conversion Efficiency in Transverse Quasi-Phase-Matched GaN SHG Waveguide Excited with Femtosecond Laser 飞秒激光激励下横向准相位匹配GaN SHG波导波长转换效率的实验测定
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.e-5-05
Naoki Yokoyama, Yoshiki Morioka, Tomotaka Murata, Hiroto Honda, F. Bagsican, K. Serita, H. Murakami, M. Tonouchi, S. Ichikawa, Yasufumi Fujiwara, M. Uemukai, T. Tanikawa, Ryuji Katayama
{"title":"Experimental Determination of Wavelength Conversion Efficiency in Transverse Quasi-Phase-Matched GaN SHG Waveguide Excited with Femtosecond Laser","authors":"Naoki Yokoyama, Yoshiki Morioka, Tomotaka Murata, Hiroto Honda, F. Bagsican, K. Serita, H. Murakami, M. Tonouchi, S. Ichikawa, Yasufumi Fujiwara, M. Uemukai, T. Tanikawa, Ryuji Katayama","doi":"10.7567/ssdm.2021.e-5-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.e-5-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133696520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FPGA Aging Analysis Based on Nearest Neighbor Residual for Unsupervised Recycled Detection 基于最近邻残差的FPGA无监督回收检测老化分析
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.l-3-03
Y. Isaka, Michihiro Shintani, Michiko Inoue
{"title":"FPGA Aging Analysis Based on Nearest Neighbor Residual for Unsupervised Recycled Detection","authors":"Y. Isaka, Michihiro Shintani, Michiko Inoue","doi":"10.7567/ssdm.2021.l-3-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.l-3-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132567012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 24-MHz 13-μW CTGS Class-C Complementary Colpitts Crystal Oscillator with On-Chip Background Temperature Compensation 一种具有片上背景温度补偿的24 mhz 13 μ w CTGS c类互补科尔皮茨晶体振荡器
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.l-4-04
Zule Xu, Noritoshi Kimura, Kenichi Okada, M. Miyahara
{"title":"A 24-MHz 13-μW CTGS Class-C Complementary Colpitts Crystal Oscillator with On-Chip Background Temperature Compensation","authors":"Zule Xu, Noritoshi Kimura, Kenichi Okada, M. Miyahara","doi":"10.7567/ssdm.2021.l-4-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.l-4-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134511129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrodeposition of Cu doped ZnS and evaluation of its electrochemical and photocatalytic property 铜掺杂ZnS的电沉积及其电化学和光催化性能评价
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.c-6-03
N. Okamoto, Naohiro Matsuda, Takeyasu Saito
{"title":"Electrodeposition of Cu doped ZnS and evaluation of its electrochemical and photocatalytic property","authors":"N. Okamoto, Naohiro Matsuda, Takeyasu Saito","doi":"10.7567/ssdm.2021.c-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.c-6-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124807016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experiments and Simulations of Ultrasonic Bonding for Al Bump Arrays 铝碰撞阵列超声键合的实验与仿真
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.c-4-05
Pin Li, Hai-Wen Hung, Yuan-Kuan Chen, Wallace Chuang, E. Schellkes, Yasuda Kiyokazu, Jenn-Ming Song
{"title":"Experiments and Simulations of Ultrasonic Bonding for Al Bump Arrays","authors":"Pin Li, Hai-Wen Hung, Yuan-Kuan Chen, Wallace Chuang, E. Schellkes, Yasuda Kiyokazu, Jenn-Ming Song","doi":"10.7567/ssdm.2021.c-4-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.c-4-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125046127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
H igh-performance β-Ga2O3 Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Based on Hafnium Oxide Gate Dielectric 基于氧化铪栅极电介质的高性能β-Ga2O3太阳盲金属氧化物半导体场效应光电晶体管
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.e-6-03
Zhe Li, Zhaoqing Feng, Yu Xu, Q. Feng, Jincheng Zhang, Chunfu Zhang, Yi Hao
{"title":"H igh-performance β-Ga2O3 Solar-Blind Metal-Oxide-Semiconductor Field-Effect Phototransistor Based on Hafnium Oxide Gate Dielectric","authors":"Zhe Li, Zhaoqing Feng, Yu Xu, Q. Feng, Jincheng Zhang, Chunfu Zhang, Yi Hao","doi":"10.7567/ssdm.2021.e-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.e-6-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129866978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Light Illumination towards Enhanced Selectivity of Volatile Organic Compound Gas Sensor using a Single-Device ReS2 FET 光照明对利用单器件ReS2 FET提高挥发性有机化合物气体传感器选择性的影响
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-6-08
M. A. Zulkefli, Bablu Mukherjee, R. Sahara, R. Hayakawa, Takuya Iwasaki, S. Nakaharai, Yutaka Wakayama
{"title":"Effect of Light Illumination towards Enhanced Selectivity of Volatile Organic Compound Gas Sensor using a Single-Device ReS2 FET","authors":"M. A. Zulkefli, Bablu Mukherjee, R. Sahara, R. Hayakawa, Takuya Iwasaki, S. Nakaharai, Yutaka Wakayama","doi":"10.7567/ssdm.2021.h-6-08","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-6-08","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127132295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rail-to-Rail Output Voltage Swing of Inverter with Organic Thin-Film Transistor at 2.5V Vdd toward Reliable Operation of Low Leakage Large Scale Logic Circuits 2.5V Vdd有机薄膜晶体管逆变器轨间输出电压摆幅对低漏大规模逻辑电路可靠运行的影响
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.l-4-05
Y. Ogasahara, K. Kuribara, Kunihiro Ohshima, Takashi Sato
{"title":"Rail-to-Rail Output Voltage Swing of Inverter with Organic Thin-Film Transistor at 2.5V Vdd toward Reliable Operation of Low Leakage Large Scale Logic Circuits","authors":"Y. Ogasahara, K. Kuribara, Kunihiro Ohshima, Takashi Sato","doi":"10.7567/ssdm.2021.l-4-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.l-4-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129141146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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