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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction 同步纳米束x射线衍射表征4H-SiC沟槽MOSFET的局部应变
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.d-4-09
W. Takeuchi, E. Kagoshima, K. Sumitani, Y. Imai, S. Shibayama, M. Sakashita, Shigeru Kimura, Hidemoto Tomita, Tsuyoshi Nishiwaki, Hirokazu Fujiwara, Osamu Nakatsuka
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引用次数: 0
Effect of hBN in Inducing Valleytronics Properties in hBN/Bilayer Graphene Commensurate Heterostructure hBN对hBN/双层石墨烯相称异质结构诱导谷电子特性的影响
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-5-04
Afsal Kareekunnan, Hiroshi Mizuta, M. Muruganathan
{"title":"Effect of hBN in Inducing Valleytronics Properties in hBN/Bilayer Graphene Commensurate Heterostructure","authors":"Afsal Kareekunnan, Hiroshi Mizuta, M. Muruganathan","doi":"10.7567/ssdm.2021.h-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-5-04","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"321 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122736240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of Al3Nb thin films for Al(111) orientation control Al3Nb薄膜在Al(111)取向控制中的应用
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.c-6-05
M. Takeyama, Masaru Sato
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引用次数: 0
Evaluation of Homogeneous Linewidth of 167Er:Y2SiO5 in Frequency Domain Measurement using Laser Stabilization with Optical Frequency Comb 利用光频梳激光稳定技术评价167Er:Y2SiO5在频域测量中的均匀线宽
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.e-6-05
Shoichiro Ysaui, M. Hiraishi, Atsushi Ishizawa, H. Omi, R. Kaji, Satoru Adachi, T. Tawara
{"title":"Evaluation of Homogeneous Linewidth of 167Er:Y2SiO5 in Frequency Domain Measurement using Laser Stabilization with Optical Frequency Comb","authors":"Shoichiro Ysaui, M. Hiraishi, Atsushi Ishizawa, H. Omi, R. Kaji, Satoru Adachi, T. Tawara","doi":"10.7567/ssdm.2021.e-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.e-6-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133617877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards efficient GeSn laser sources on mid-IR photonic platform 中红外光子平台上高效GeSn激光源的研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.e-6-01
Mustafa El-Kurdi
{"title":"Towards efficient GeSn laser sources on mid-IR photonic platform","authors":"Mustafa El-Kurdi","doi":"10.7567/ssdm.2021.e-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.e-6-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"79 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129469175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge neutrality point disparity based identification of ethanol gas molecules in activated carbon functionalized graphene 基于电荷中性点差的活性炭功能化石墨烯中乙醇气体分子的识别
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-6-03
SankarGanesh Ramaraj, M. Muruganathan, O. G. Agbonlahor, Hisashi Maki, Masashi Hattori, Hiroshi Mizuta
{"title":"Charge neutrality point disparity based identification of ethanol gas molecules in activated carbon functionalized graphene","authors":"SankarGanesh Ramaraj, M. Muruganathan, O. G. Agbonlahor, Hisashi Maki, Masashi Hattori, Hiroshi Mizuta","doi":"10.7567/ssdm.2021.h-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-6-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133565289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of single-grain crystal on SiO2 sandwiched Au films by micron chevron-shaped laser beam scanning 微米v形激光束扫描在SiO2 - Au薄膜上生长单晶
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-5-06
A. H. Pham, Wenchang Yeh, S. Morito, Takuya Ohba
{"title":"Growth of single-grain crystal on SiO2 sandwiched Au films by micron chevron-shaped laser beam scanning","authors":"A. H. Pham, Wenchang Yeh, S. Morito, Takuya Ohba","doi":"10.7567/ssdm.2021.k-5-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-5-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133634873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
DFT study on structure and anisotropy of high N-atom density layer in 4H-SiC 4H-SiC高n原子密度层结构和各向异性的DFT研究
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.d-6-05
Naoki Komatsu, Y. Egami, T. Ono, M. Uemoto
{"title":"DFT study on structure and anisotropy of high N-atom density layer in 4H-SiC","authors":"Naoki Komatsu, Y. Egami, T. Ono, M. Uemoto","doi":"10.7567/ssdm.2021.d-6-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.d-6-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114596710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Differential Signal Balancer Embedded in Silicon LSI with Bifilar Coupling Inductors and Stacked Delay Lines 带双线耦合电感和堆叠延迟线的嵌入式硅集成电路差分信号平衡器
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.c-5-03
M. Kameya, E. Gofuku, K. Nakamura
{"title":"Differential Signal Balancer Embedded in Silicon LSI with Bifilar Coupling Inductors and Stacked Delay Lines","authors":"M. Kameya, E. Gofuku, K. Nakamura","doi":"10.7567/ssdm.2021.c-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.c-5-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128573811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digitalized Power Electronics for Incorporating IoT and AI 结合物联网和人工智能的数字化电力电子
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.l-5-01
Makoto Takamiya
{"title":"Digitalized Power Electronics for Incorporating IoT and AI","authors":"Makoto Takamiya","doi":"10.7567/ssdm.2021.l-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.l-5-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133648724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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