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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials最新文献

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Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode 应变TiN电极增强5nm HZO金属-铁电-绝缘体-半导体技术中的铁电性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.a-5-01
Cheng-Hung Wu, Kuan-Chi Wang, Yu-Yun Wang, Tian-Li Wu, Chun-Jung Su, Yao-Jen Lee, Chenming Hu
{"title":"Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode","authors":"Cheng-Hung Wu, Kuan-Chi Wang, Yu-Yun Wang, Tian-Li Wu, Chun-Jung Su, Yao-Jen Lee, Chenming Hu","doi":"10.7567/ssdm.2021.a-5-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.a-5-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132311532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic-field sensing based on Fe-Sn nanocrystalline thin films 基于Fe-Sn纳米晶薄膜的磁场传感
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.i-5-06
J. Shiogai, Zhenhu Jin, Yosuke Satake, K. Fujiwara, Tsutomu Nojima, Atsushi Tsukazaki
{"title":"Magnetic-field sensing based on Fe-Sn nanocrystalline thin films","authors":"J. Shiogai, Zhenhu Jin, Yosuke Satake, K. Fujiwara, Tsutomu Nojima, Atsushi Tsukazaki","doi":"10.7567/ssdm.2021.i-5-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.i-5-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125535632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Performance Self-rectifying Ferroelectric Tunnel Junction Devices Formed by Domain Pinning Effect Attributed to Interfacial Oxygen Vacancy 界面氧空位区钉钉效应形成的高性能自整流铁电隧道结器件
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.b-6-06
Y. Goh, Jeong Hyeon Hwang, Minki Kim, Sanghun Jeon
{"title":"High Performance Self-rectifying Ferroelectric Tunnel Junction Devices Formed by Domain Pinning Effect Attributed to Interfacial Oxygen Vacancy","authors":"Y. Goh, Jeong Hyeon Hwang, Minki Kim, Sanghun Jeon","doi":"10.7567/ssdm.2021.b-6-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.b-6-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121455617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of 2D Ferroelectric-FET NVMs considering Memory Window and Reliability related Interlayer Field 考虑存储器窗口和可靠性相关层间场的二维铁电场效应晶体管nvm评价
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.b-6-03
You-Sheng Liu, Pin Su
{"title":"Evaluation of 2D Ferroelectric-FET NVMs considering Memory Window and Reliability related Interlayer Field","authors":"You-Sheng Liu, Pin Su","doi":"10.7567/ssdm.2021.b-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2021.b-6-03","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121564133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Passivation Quality and Conductivity Improvements of Counter-doped Amorphous Silicon Films by Flash Lamp Annealing 用闪光灯退火法提高反掺杂非晶硅薄膜的钝化质量和电导率
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-5-05
Yujia Liu, H. Tu, N. Yamaguchi, Keisuke Ohdaira
{"title":"Passivation Quality and Conductivity Improvements of Counter-doped Amorphous Silicon Films by Flash Lamp Annealing","authors":"Yujia Liu, H. Tu, N. Yamaguchi, Keisuke Ohdaira","doi":"10.7567/ssdm.2021.f-5-05","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-5-05","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"18 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114107809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots 基于Fe纳米点阵列的双栅单电子器件中由于点的几何结构导致的栅电容分布不均匀
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.h-5-02
Takayuki Gyakushi, Yūki Asai, Beommo Byun, Ikuma Amano, A. Tsurumaki‐Fukuchi, Masashi Arita, Yasuo Takahashi
{"title":"Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots","authors":"Takayuki Gyakushi, Yūki Asai, Beommo Byun, Ikuma Amano, A. Tsurumaki‐Fukuchi, Masashi Arita, Yasuo Takahashi","doi":"10.7567/ssdm.2021.h-5-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.h-5-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121513832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of BaSi2 Homojunction Diodes on Glass Substrates by Aluminum Induced Crystallization and Two-step Evaporation Method 用铝诱导结晶和两步蒸发法制备玻璃基板上的BaSi2同质结二极管
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-4-06
Takamasa Yoshino, Y. Kurokawa, K. Gotoh, S. Miyamoto, N. Usami
{"title":"Fabrication of BaSi2 Homojunction Diodes on Glass Substrates by Aluminum Induced Crystallization and Two-step Evaporation Method","authors":"Takamasa Yoshino, Y. Kurokawa, K. Gotoh, S. Miyamoto, N. Usami","doi":"10.7567/ssdm.2021.f-4-06","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-4-06","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133204543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sputtering gas pressure dependence on the LaBxNy insulator formation 溅射气体压力对LaBxNy绝缘体形成的依赖性
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.k-5-07
Eun-Ki Hong, S. Ohmi
{"title":"Sputtering gas pressure dependence on the LaBxNy insulator formation","authors":"Eun-Ki Hong, S. Ohmi","doi":"10.7567/ssdm.2021.k-5-07","DOIUrl":"https://doi.org/10.7567/ssdm.2021.k-5-07","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131886859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic 2-Terminal Perovskite/CIGS Tandem Solar Cells 单片2端钙钛矿/CIGS串联太阳能电池
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-6-01
C. A. Kaufmann, T. Bertram, M. Jošt, Amran a, T. Kodalle, Andrea Ruiz Perona, Jose A. Marquez Rodriguez, I. Kafedjiska, N. Maticiuc, R. Wenisch, Xin Li, Hasan A. Yetkin, Guillermo A. Farias Basulto, Pablo I. Reyes Figueroa, A. Magomedov, T. Malinauskas, T. J. Jacobsson, D. Koushik, M. Creatore, V. Getautis, T. Unold, Eva Unger, R. Klenk, I. Lauermann, S. Albrecht, R. Schlatmann
{"title":"Monolithic 2-Terminal Perovskite/CIGS Tandem Solar Cells","authors":"C. A. Kaufmann, T. Bertram, M. Jošt, Amran a, T. Kodalle, Andrea Ruiz Perona, Jose A. Marquez Rodriguez, I. Kafedjiska, N. Maticiuc, R. Wenisch, Xin Li, Hasan A. Yetkin, Guillermo A. Farias Basulto, Pablo I. Reyes Figueroa, A. Magomedov, T. Malinauskas, T. J. Jacobsson, D. Koushik, M. Creatore, V. Getautis, T. Unold, Eva Unger, R. Klenk, I. Lauermann, S. Albrecht, R. Schlatmann","doi":"10.7567/ssdm.2021.f-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-6-01","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134065952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of GaInN-based photovoltaic cells under monochromatic light illumination toward the application to the optical wireless power transmission system 单色光照明下基于gainn的光伏电池在光无线电力传输系统中的应用评估
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-08 DOI: 10.7567/ssdm.2021.f-4-02
Taiki Nakabayashi, Kousuke Yamamoto, P. Dalapati, Takashi Egawa, Makoto Miyoshi
{"title":"Evaluation of GaInN-based photovoltaic cells under monochromatic light illumination toward the application to the optical wireless power transmission system","authors":"Taiki Nakabayashi, Kousuke Yamamoto, P. Dalapati, Takashi Egawa, Makoto Miyoshi","doi":"10.7567/ssdm.2021.f-4-02","DOIUrl":"https://doi.org/10.7567/ssdm.2021.f-4-02","url":null,"abstract":"","PeriodicalId":185590,"journal":{"name":"Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134066386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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