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High-Performance Amorphous InGaZnO FET as a Key Enabler for Low Thermal Budget (350OC) BEOL Monolithic 3-D Integration

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.a-8-02
Chun-Kuei Chen, Umesh Chand, Xinghua Wang, Zihang Fang, S. Hooda, Shih-Hao Tsai, A. Thean
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高性能非晶InGaZnO FET是低热预算(350OC) BEOL单片3d集成的关键推手
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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