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Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.a-7-05
Tsung-En Lee, Shao-Tse Huang, Chiung-Yi Yang, K. Toprasertpong, M. Takenaka, Yao-Jen Lee, Shinichi Takagi
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TMA处理对Si0.8Ge0.2/SOI p- finfet性能的改善
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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