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High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.d-7-08
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
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具有双AlN/AlGaInN势垒层和选择性面积再生欧姆触点的高击穿电压al0.36 ga0.64 n沟道hfet
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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