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Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.d-7-07
S. Yamada, Takashi Ishida, Toshiyuki Nakamura, R. Kamimura, Jun Suda, T. Kachi
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电感耦合等离子体反应离子蚀刻GaN沟槽结构角形控制
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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