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High Density & High Drive Current Elongated SGT Transistor for Logic Circuit Having Process Compatibility with 1.5nm node SGT SRAM

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.a-7-02
Ken'ichi Kanazawa, Yisuo Li, Tetsuo Izawa, Koji Sakui, G. Strof, Oskar Baumgartner, Gerhard Rzepa, M. Karner, Z. Stanojević, N. Harada
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用于逻辑电路的高密度高驱动电流细长SGT晶体管，具有与1.5nm节点SGT SRAM的工艺兼容性
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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