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Width Dependence of Drain Current Variability Components in Extremely Narrow GAA Silicon Nanowire MOSFETs down to 2nm Width

Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials Pub Date : 2021-09-09 DOI:10.7567/ssdm.2021.a-7-04
Zihao Liu, T. Mizutani, T. Saraya, M. Kobayashi, T. Hiramoto
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极窄GAA硅纳米线mosfet中漏极电流变异性元件的宽度依赖性，宽度可达2nm
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials
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