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Enhanced thermoelectric cooling performance of (Bi, Sb)2Te3 through platinum doping 铂掺杂提高(Bi, Sb)2Te3的热电冷却性能
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-19 DOI: 10.1016/j.mtphys.2025.101705
Jiayue Du , Yuxin Sun , Fengkai Guo, Haoyang Tong, Zhiyuan Yu, Zihang Liu, Jianbo Zhu, Jiehe Sui
{"title":"Enhanced thermoelectric cooling performance of (Bi, Sb)2Te3 through platinum doping","authors":"Jiayue Du ,&nbsp;Yuxin Sun ,&nbsp;Fengkai Guo,&nbsp;Haoyang Tong,&nbsp;Zhiyuan Yu,&nbsp;Zihang Liu,&nbsp;Jianbo Zhu,&nbsp;Jiehe Sui","doi":"10.1016/j.mtphys.2025.101705","DOIUrl":"10.1016/j.mtphys.2025.101705","url":null,"abstract":"<div><div>The requirements for solid-state cooling are growing, especially under extreme conditions. Bi<sub>2</sub>Te<sub>3</sub>-based alloys stand as the sole thermoelectric (TE) materials currently available for large-scale commercial use, and it is of great significance to further improve their TE properties. In this study, Pt is doped into p-type Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> to optimize its TE transport performance. The doping of Pt results in a dramatic rise in carrier concentration and power factor. Simultaneously, the existence of the second phases PtSb along with nanopores, contribute to an obvious reduction in lattice thermal conductivity. Hence, the <em>ZT</em> value is boosted to 1.43 at 348 K, and the average <em>ZT</em> from 300 K to 450 K is as high as 1.32. The 7-pair TE cooling module is fabricated based on this material, which exhibits a maximum cooling temperature difference of 92.2 K, and a maximum cooling capacity of 2.9 W when the hot-side temperature is 350 K. This outstanding progress will facilitate the further development of Bi<sub>2</sub>Te<sub>3</sub> cooling modules.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101705"},"PeriodicalIF":10.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Large electron-phonon drag asymmetry and reverse heat flow in the topological semimetal θ-TaN 拓扑半金属θ-TaN中的大电子-声子阻力不对称和反向热流
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-19 DOI: 10.1016/j.mtphys.2025.101706
Chunhua Li, David Broido
{"title":"Large electron-phonon drag asymmetry and reverse heat flow in the topological semimetal θ-TaN","authors":"Chunhua Li,&nbsp;David Broido","doi":"10.1016/j.mtphys.2025.101706","DOIUrl":"10.1016/j.mtphys.2025.101706","url":null,"abstract":"<div><div>A broad range of unusual transport behaviors have been discovered in topological semimetals. However, to date, the effect on the thermopower from intrinsic momentum exchange between electrons and phonons has received little attention. Here we report that huge electron-phonon drag enhancements of the thermopower of the topological semimetal, <span><math><mrow><mi>θ</mi></mrow></math></span>-phase tantalum nitride (<span><math><mrow><mi>θ</mi></mrow></math></span>-TaN), can occur that persist even up to room temperature. Our first principles calculations also identify a surprising asymmetry in which the large drag-enhanced thermopowers found slightly above the material's chemical potential disappear just below it. The large thermopower enhancements result from anomalous drag contributions from high frequency acoustic phonons with unusually small decay rates. The apparent vanishing drag results from (i) the emergence of an exceptionally high electrical conductivity promoted by the steep linear electronic dispersions extending below one of the topological nodal points; (ii) a remarkable cancellation in which momentum transferred from a charge current creates oppositely directed phonon heat currents of nearly equal magnitude, thereby masking the drag contributions. This extraordinary transport behavior is a consequence of an unusual interplay between intrinsic electron and phonon material properties in <span><math><mrow><mi>θ</mi></mrow></math></span>-TaN. Our work gives new insights into the fundamental physical properties of coupled electron-phonon systems and motivates further exploration of drag effects in semimetals.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101706"},"PeriodicalIF":10.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MoS2-based quantum dot artificial synapses for neuromorphic computing 基于二硫化钼的量子点人工突触用于神经形态计算
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-18 DOI: 10.1016/j.mtphys.2025.101703
Gongjie Liu, Haoqi Liu, Feifan Fan, Yuefeng Gu, Lisi Wei, Xiaolin Xiang, Yuhao Wang, Qiuhong Li
{"title":"MoS2-based quantum dot artificial synapses for neuromorphic computing","authors":"Gongjie Liu,&nbsp;Haoqi Liu,&nbsp;Feifan Fan,&nbsp;Yuefeng Gu,&nbsp;Lisi Wei,&nbsp;Xiaolin Xiang,&nbsp;Yuhao Wang,&nbsp;Qiuhong Li","doi":"10.1016/j.mtphys.2025.101703","DOIUrl":"10.1016/j.mtphys.2025.101703","url":null,"abstract":"<div><div>The advancement of deep learning has escalated computational requirements. Neuromorphic devices, particularly those based on memristors, present strong potential to meet these demands. However, current memristors face challenges such as a low on/off ratio and poor linearity, which hinder the progress of neuromorphic computing. Here, we propose a MoS<sub>2</sub>-based quantum dot memristor, where the presence of quantum dots facilitates the formation and stability of conductive channels. The device exhibits narrow set and reset voltage distributions, with an on/off ratio reaching 10<sup>5</sup> and multiple resistive states. Based on these multi-state characteristics, we achieved parallel image processing with various operators. The excitatory postsynaptic current (EPSC), spike-timing-dependent plasticity (STDP), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD) characteristics of the device were tested, with the linearity of LTP and LTD being 0.21 and −0.25, respectively. Based on the good linearity of weight updates, we built an artificial neural network to recognize facial images with Gaussian, salt-and-pepper, and Poisson noise. At noise levels of 40 %, 48 %, and λ = 80, the recognition accuracy rates were still as high as 100 %, 100 %, and 97.33 %, respectively. This work provides a valuable reference for quantum dot-based neuromorphic computing.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101703"},"PeriodicalIF":10.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143640421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of plastic hot-rolling on thermoelectric properties in Ag2Se0.65S0.35 ductile materials 塑性热轧对Ag2Se0.65S0.35韧性材料热电性能的影响
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-18 DOI: 10.1016/j.mtphys.2025.101707
Shiqi Yang , Jin Liu , Xuefeng Zhao , Pengfei Qiu , Xun Shi
{"title":"Effect of plastic hot-rolling on thermoelectric properties in Ag2Se0.65S0.35 ductile materials","authors":"Shiqi Yang ,&nbsp;Jin Liu ,&nbsp;Xuefeng Zhao ,&nbsp;Pengfei Qiu ,&nbsp;Xun Shi","doi":"10.1016/j.mtphys.2025.101707","DOIUrl":"10.1016/j.mtphys.2025.101707","url":null,"abstract":"<div><div>Ag<sub>2</sub>(S, Se) solid solutions near the morphotropic phase boundary (MPB) well integrate excellent room-temperature ductility and high thermoelectric (TE) performance together, showing the great potential for the usage in flexible thermoelectrics. However, their orthorhombic-monoclinic phase transition brings great difficulty to fabricate the Ag<sub>2</sub>(S, Se)-based flexible films with high TE performance. In this work, taking the Ag<sub>2</sub>Se<sub>0.65</sub>S<sub>0.35</sub> which locates at the orthorhombic-monoclinic phase boundary as an example, we systematically investigate the evolutions of phase and electrical transport properties of Ag<sub>2-<em>x</em></sub>Se<sub>0.65</sub>S<sub>0.35</sub> during the plastic hot-rolling and the following post-treatment processes. Significantly degraded power factor is observed with increasing the deformation degree, but it can be recovered back by post-treatment, i.e. firstly annealing at 353 K and then dipping in liquid nitrogen. Finally, high-performance flexible Ag<sub>2</sub>Se<sub>0.65</sub>S<sub>0.35</sub> film with a room-temperature power factor of 17.0 μWcm<sup>−1</sup>K<sup>−2</sup> is successfully obtained, providing a promising candidate materials for the development of flexible TE device used in wearables.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101707"},"PeriodicalIF":10.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143640422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High responsivity, ultra-flexible, self-driven solar-blind fibrous photoelectrochemical detector for seawater antibiotic detection 用于海水抗生素检测的高响应度、超柔性、自驱动太阳盲纤维光电化学检测器
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-17 DOI: 10.1016/j.mtphys.2025.101702
Gang Wu , Kai Chen , Yizhou Ni , Chao Wu , Jinsong Liu , Haizheng Hu , Xuehua Zhang , Shunli Wang , Fengmin Wu , Zhengyuan Wu , Daoyou Guo
{"title":"High responsivity, ultra-flexible, self-driven solar-blind fibrous photoelectrochemical detector for seawater antibiotic detection","authors":"Gang Wu ,&nbsp;Kai Chen ,&nbsp;Yizhou Ni ,&nbsp;Chao Wu ,&nbsp;Jinsong Liu ,&nbsp;Haizheng Hu ,&nbsp;Xuehua Zhang ,&nbsp;Shunli Wang ,&nbsp;Fengmin Wu ,&nbsp;Zhengyuan Wu ,&nbsp;Daoyou Guo","doi":"10.1016/j.mtphys.2025.101702","DOIUrl":"10.1016/j.mtphys.2025.101702","url":null,"abstract":"<div><div>The detection of antibiotics in seawater is essential for ensuring the safety and sustainability of the marine environment. However, existing detection methods are hindered by limitations such as slow response times, complex operations, or high costs. In this study, we propose the omnidirectional growth of high-quality <em>α</em>-Ga<sub>2</sub>O<sub>3</sub> nanopillar arrays on a flexible carbon nanotube fiber (CNTF) substrate to construct a self-powered fibrous photoelectrochemical sensor for antibiotic detection. Importantly, the device effectively mitigates signal interference from ambient light and seawater fluctuations due to its ultra-flexibility and solar-blind photoresponse characteristics. Specifically, a significant photoresponsivity of 61.6 mA/W, a detectivity of 3.03 × 10<sup>11</sup> Jones, and an external quantum efficiency of 30.1 % are obtained, which are surpassing the performance of most fibrous photodetectors. Moreover, the device with 360° omnidirectional detection capability exhibits no significant degradation of photoresponse during 2000 bending cycles or long-term continuous operation. Notably, under combined effects of enhancing the separation efficiency of photogenerated carriers by organic ions and competing for solar-blind UV light absorption between antibiotic molecules and Ga<sub>2</sub>O<sub>3</sub>, the <em>α</em>-Ga<sub>2</sub>O<sub>3</sub>@CNTF detector demonstrates the capability to detect sulfonamides, quinolones, and tetracyclines at various concentrations in seawater. This work provides valuable insights into developing high-performance, cost-effective, and user-friendly devices for advanced seawater antibiotic detection technology.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101702"},"PeriodicalIF":10.0,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143640426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Smoothing Li transport via weak Metal-O bonds for improved ionic mobility in lithium lanthanum titanium oxide 通过弱金属- o键平滑Li输运提高镧钛氧化锂离子迁移率
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-17 DOI: 10.1016/j.mtphys.2025.101704
Chengran Luo , Yao Shen , Songhe Zhang , Cheng Han , Hongyi Chen
{"title":"Smoothing Li transport via weak Metal-O bonds for improved ionic mobility in lithium lanthanum titanium oxide","authors":"Chengran Luo ,&nbsp;Yao Shen ,&nbsp;Songhe Zhang ,&nbsp;Cheng Han ,&nbsp;Hongyi Chen","doi":"10.1016/j.mtphys.2025.101704","DOIUrl":"10.1016/j.mtphys.2025.101704","url":null,"abstract":"<div><div>Lithium lanthanum titanate oxide (LLTO) presents significant potential as a solid electrolyte in all-solid-state Li-ion batteries. However, its ionic conductivity requires enhancement for broader applications. In this study, we conducted first-principles calculations to explore the impact of metal doping on LLTO's ionic mobility. LLTO showed uneven ionic diffusion characterized by singular Li-O bonds at certain intermediate states. Ni doping introduced additional electrons into the <em>b</em><sub>1</sub>∗ orbital of the Ti-O anti-bonding, weakening the Ti-O bond and strengthening the Li-O bond. The enhanced Li-O bond facilitated smoother ionic diffusion, reducing the barrier energy to 3.4 × 10<sup>−4</sup> cm<sup>2</sup>/s for Ni-doped LLTO. Moreover, incorporating various metal dopants in LLTO consistently demonstrated that weaker metal-O bonds contributed to reduced barrier energies. This research underscores the efficacy of diminishing metal-O bonds to significantly boost ionic migration rates in solid-state electrolytes with a perovskite structure.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101704"},"PeriodicalIF":10.0,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143640427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional Janus MoSeH with tunable charge density wave, superconductivity and topological properties 具有可调电荷密度波、超导性和拓扑特性的二维 Janus MoSeH
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-15 DOI: 10.1016/j.mtphys.2025.101698
Chang-Hao Sui, Shu-Xiang Qiao, Hao Ding, Kai-Yue Jiang, Shu-Ying Shang, Hong-Yan Lu
{"title":"Two-dimensional Janus MoSeH with tunable charge density wave, superconductivity and topological properties","authors":"Chang-Hao Sui,&nbsp;Shu-Xiang Qiao,&nbsp;Hao Ding,&nbsp;Kai-Yue Jiang,&nbsp;Shu-Ying Shang,&nbsp;Hong-Yan Lu","doi":"10.1016/j.mtphys.2025.101698","DOIUrl":"10.1016/j.mtphys.2025.101698","url":null,"abstract":"<div><div>The coexistence and competition between the well-known quantum phenomena such as superconductivity, charge density wave (CDW), and band topology represent a cutting-edge frontier in the field of condensed matter physics. Two-dimensional (2D) Janus transition metal sulfide hydrides, a family of materials known for hosting diverse quantum phenomena, have drawn extensive attention recently. In this work, based on first-principles calculations, a novel member of this family, named 2H-MoSeH, is predicted. The pristine 2H-MoSeH exhibits CDW induced by electron–phonon coupling. Remarkably, this CDW state can be entirely suppressed under 2% biaxial compressive strain, giving rise to superconducting state with transition temperature (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span>) of 24 K. Moreover, CDW can also be suppresed by 0.15 hole doping per primitive cell, leading to superconductivity with a <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span> of 17 K while simultaneously inducing a non-trivial band topology. The coexistence and tunable competition among superconductivity, CDW, and band topology in 2H-MoSeH establish it as an ideal platform for exploring novel quantum phenomena and designing new quantum devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101698"},"PeriodicalIF":10.0,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prediction of high-temperature superconductors with Tc up to 214.3 K in Mg-Zr-H ternary hydrides Mg-Zr-H三元氢化物中Tc高达214.3 K的高温超导体的预测
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-15 DOI: 10.1016/j.mtphys.2025.101695
Yujie Wang , Kaige Hu , Min Pan
{"title":"Prediction of high-temperature superconductors with Tc up to 214.3 K in Mg-Zr-H ternary hydrides","authors":"Yujie Wang ,&nbsp;Kaige Hu ,&nbsp;Min Pan","doi":"10.1016/j.mtphys.2025.101695","DOIUrl":"10.1016/j.mtphys.2025.101695","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Ternary hydrides, with richer chemical compositions and structures compared to binary hydrides due to their high degrees of freedom, are expected to contain more candidates for high-&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;c&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; superconductors with remarkable properties including higher &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;c&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and lower stabilizing pressures. In this work, the high-pressure structures, electronic properties, and superconductivity of MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; (&lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-6) ternary system are investigated by combining the prediction method of particle swarm optimization algorithm and first-principles calculations. We find thermodynamically stable structures for MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, and MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;6&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, respectively, while only metastable structures for &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;n&lt;/mi&gt;&lt;mo&gt;⩾&lt;/mo&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;. During the predicted structures, our analysis mainly focuses on &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;P&lt;/mi&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mn&gt;6&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;/&lt;/mo&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;mi&gt;c&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;R&lt;/mi&gt;&lt;mover&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;̄&lt;/mo&gt;&lt;/mrow&gt;&lt;/mover&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;P&lt;/mi&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;mover&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;̄&lt;/mo&gt;&lt;/mrow&gt;&lt;/mover&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;6&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt;, and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;F&lt;/mi&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;mover&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;̄&lt;/mo&gt;&lt;/mrow&gt;&lt;/mover&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;sub&gt;12&lt;/sub&gt;. &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;P&lt;/mi&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mn&gt;6&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;/&lt;/mo&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;mi&gt;c&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;R&lt;/mi&gt;&lt;mover&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;̄&lt;/mo&gt;&lt;/mrow&gt;&lt;/mover&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; exhibit a low &lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;T&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mtext&gt;c&lt;/mtext&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&lt;/span&gt; of 0.006 K at 40 GPa and 0.95 K at ambient pressure, respectively, due to low electronic contribution from hydrogen at the Fermi level. &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;P&lt;/mi&gt;&lt;mi&gt;m&lt;/mi&gt;&lt;mover&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mo&gt;̄&lt;/mo&gt;&lt;/mrow&gt;&lt;/mover&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-MgZrH&lt;span&gt;&lt;math&gt;&lt;msub&gt;&lt;mrow&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;mn&gt;6&lt;/mn&gt;&lt;/mr","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101695"},"PeriodicalIF":10.0,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A suspended InSe membrane-based metal-semiconductor junction with excellent performance via flexoelectricity 一种悬浮型铟硒薄膜金属半导体结,具有优异的柔性电性能
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-14 DOI: 10.1016/j.mtphys.2025.101701
J.J. Wu , Z.Z. He , G.Q. Zuo , L. Sun , D. Tan , C.L. Zhang
{"title":"A suspended InSe membrane-based metal-semiconductor junction with excellent performance via flexoelectricity","authors":"J.J. Wu ,&nbsp;Z.Z. He ,&nbsp;G.Q. Zuo ,&nbsp;L. Sun ,&nbsp;D. Tan ,&nbsp;C.L. Zhang","doi":"10.1016/j.mtphys.2025.101701","DOIUrl":"10.1016/j.mtphys.2025.101701","url":null,"abstract":"<div><div>Two-dimensional semiconductor (2DS) materials exhibit immense potential for flexible electronic and photoelectronic devices due to their ultra-thin structural features. This paper proposes a suspended 2DS-InSe membrane-based metal-semiconductor junction (MSJ) structure, specifically designed to induce non-uniform tensile strain. This configuration enables a significant flexoelectric-induced in-plane polarization field while mitigating substrate effects. The effect of strain-gradient-induced flexoelectric polarization field on the performance of the proposed 2DS-InSe membrane-based MSJ is investigated using the CAFM, PFM and KPFM modules to characterize current-voltage (<em>I</em>-<em>V</em>) characteristics, out-of-plane electromechanical response, and surface potential. The suspended 2DS-InSe with thickness of 60 nm demonstrates enhanced electromechanical and photoelectric responses, as well as increased output current, compared to the supported 2DS-InSe, attributed to the larger in-plane polarization induced by non-uniform tensile strain. Additionally, the in-plane (<span><math><mrow><msub><mi>f</mi><mn>1111</mn></msub><mo>=</mo><msub><mi>f</mi><mn>2222</mn></msub><mo>=</mo><mn>3.053</mn></mrow></math></span> nC/m, <span><math><mrow><msub><mi>f</mi><mn>1221</mn></msub><mo>=</mo><msub><mi>f</mi><mn>2112</mn></msub><mo>=</mo><mo>−</mo><mn>9.374</mn></mrow></math></span> nC/m) and the out-of-plane (<span><math><mrow><msub><mi>f</mi><mn>3113</mn></msub><mo>=</mo><msub><mi>f</mi><mn>3223</mn></msub><mo>=</mo><mo>−</mo><mn>0.0188</mn></mrow></math></span> nC/m, <span><math><mrow><msub><mi>f</mi><mn>3333</mn></msub><mo>=</mo><mo>−</mo><mn>0.1407</mn></mrow></math></span> nC/m) flexoelectric coefficients of the used 2DS-InSe are evaluated. This study demonstrates that that the electrical, electromechanical, and photoelectric properties of membrane-based MSJs can be mechanically tuned through the flexoelectric-induced polarization fields, offering valuable insights for the development of novel membrane-based devices utilizing 2DS materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101701"},"PeriodicalIF":10.0,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143618728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anomalous anisotropic magnetotransport behavior mediated by Fermi surface reconstruction in topological nodal line TiB2 single crystals 拓扑节点线TiB2单晶中费米面重构介导的异常各向异性磁输运行为
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-03-12 DOI: 10.1016/j.mtphys.2025.101690
Ming Cheng , Lanxin Liu , Yu Zhao , Yifan Deng , Run Lv , Ruihuan Lan , Nan Zhou , Yongqiang Pan , Wenhai Song , Yuyan Han , Xuan Luo , Yuping Sun
{"title":"Anomalous anisotropic magnetotransport behavior mediated by Fermi surface reconstruction in topological nodal line TiB2 single crystals","authors":"Ming Cheng ,&nbsp;Lanxin Liu ,&nbsp;Yu Zhao ,&nbsp;Yifan Deng ,&nbsp;Run Lv ,&nbsp;Ruihuan Lan ,&nbsp;Nan Zhou ,&nbsp;Yongqiang Pan ,&nbsp;Wenhai Song ,&nbsp;Yuyan Han ,&nbsp;Xuan Luo ,&nbsp;Yuping Sun","doi":"10.1016/j.mtphys.2025.101690","DOIUrl":"10.1016/j.mtphys.2025.101690","url":null,"abstract":"<div><div>Transition metal diborides (MB<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>), characterized by their simple crystal lattice structure and wide linear dispersion range, serve as an ideal system for exploring novel topological states and anomalous physical properties. In this study, we report a temperature-induced Fermi surface reconstruction at around 100 K and the anomalous magnetotransport behaviors mediated by it in nodal line semimetal TiB<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> single crystals. The experimental evidence for the Fermi surface reconstruction comes from the following aspects: (i) a noticeable dip in the temperature-dependent Seebeck coefficient; (ii) a breakdown of the Kohler’s rule; (iii) abnormal changes of hole carriers at around 100 K; (iv) the sharp change of twofold symmetry in the angle-dependent magnetoresistance (ADMR) patterns. Through such a Fermi surface reconstruction, the anisotropic magnetotransport behavior of TiB<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> exhibits significant changes. At low temperatures, TiB<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> exhibits field orientation-dependent superlinear unsaturated MR, while at high temperatures it can transform to linear MR or sublinear MR depending on the direction of magnetic field. Finally, the possible origin of the Fermi surface was discussed. This work reveals the presence of Fermi surface reconstruction and provide a suitable platform for exploring the relationship between Fermi surface topology and anomalous magnetotransport phenomenon in topological semimetals.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101690"},"PeriodicalIF":10.0,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143599608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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