Materials Today Physics最新文献

{"title":"Ultralow frequency interlayer mode from suppressed van der Waals coupling in polar Janus SMoSe/SWSe heterostructure","authors":"Kai Ren ,&nbsp;Ke Wang ,&nbsp;Yi Luo ,&nbsp;Minglei Sun ,&nbsp;Tariq Altalhi ,&nbsp;Boris I. Yakobson ,&nbsp;Gang Zhang","doi":"10.1016/j.mtphys.2025.101689","DOIUrl":"10.1016/j.mtphys.2025.101689","url":null,"abstract":"<div><div>The broken mirror symmetry in Janus SMoSe and SWSe monolayers induces novel properties for photocatalytic, thermoelectric and photocatalytic devices. Interlayer coupling is critical in van der Waals (vdW) heterostructure for quantum transport and polaritonics. We investigate Janus SMoSe/SWSe vdW heterostructures with three stacking interfaces: S-S, S-Se, and Se-Se. The S-Se SMoSe/SWSe vdW heterostructure with lowest symmetry exhibits ultralow frequencies of in-plane shear (1.94 cm⁻¹) and out-of-plane breathing (4.47 cm⁻¹) modes due to weaker interlayer vdW restoring forces and a significant intrinsic vertical dipole moment. The reduced restoring forces are caused by the critical charge transfer across the vdW interface. Thus, the larger interlayer spacing in the S-Se SMoSe/SWSe heterostructure results in the suppressed vdW interlayer coupling for ultralow phonon frequencies. These findings advance understanding of tuning vdW coupling in polar Janus SMoSe/SWSe heterostructures by stacking engineering, providing theoretical insights for designing tunable nanoelectronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101689"},"PeriodicalIF":10.0,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143546438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Balancing structural stability and thermoelectric performance of GeMnTe2 by manipulating the complexity of cation sublattice","authors":"Yunpu Zhang ,&nbsp;Yang Li ,&nbsp;Wenyi Mao ,&nbsp;Xinyue Zhang ,&nbsp;Jiye Zhang ,&nbsp;Jun Luo","doi":"10.1016/j.mtphys.2025.101693","DOIUrl":"10.1016/j.mtphys.2025.101693","url":null,"abstract":"<div><div>GeTe, known for its superior thermoelectric performance, undergoes a structural transition from low temperature rhombohedral to high temperature cubic phase at around 700 K. This phase transition is the primary obstacle to its practical applications. Alloying Mn at the Ge site can inhibit the phase transition and stabilize the cubic structure down to room temperature, while simultaneously degrading thermoelectric properties. In this work, room-temperature cubic GeMnTe₂, is chosen as the matrix, and then the complexity of cation sublattice is manipulated to achieve the best balance between structural stability and thermoelectric performance. Alloying equal amount of Ag and Sb atoms at the Ge site induces lattice softening, local chemical fluctuation, and lattice anharmonicity, leading to a lower sound velocity and significantly reducing the lattice thermal conductivity. Further doping of Sb synergistically modulates the thermoelectric performance by optimizing the electrical properties and reducing the electronic thermal conductivity. Consequently, a dimensionless thermoelectric figure of merit <em>zT</em> of 1.35 at 773 K and an average <em>zT</em> of 0.8 across the temperature range of 300–773 K are achieved for the Ge_0.575Ag_0.25Sb_0.375Mn_0.8Te₂, demonstrating its promising potential as a high-performance thermoelectric material.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101693"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"(AgSbTe2)1-x(Bi2Te3)x-based thermoelectric device for low-grade heat recovery","authors":"Di Zhang,&nbsp;Min Liu,&nbsp;Tao Jin,&nbsp;Long Yang,&nbsp;Wen Li,&nbsp;Yanzhong Pei","doi":"10.1016/j.mtphys.2025.101692","DOIUrl":"10.1016/j.mtphys.2025.101692","url":null,"abstract":"<div><div>Near room-temperature thermoelectric materials have promising applications for recovering low-grade waste heat, but high-performance <em>p</em>-type thermoelectric candidates are quite limited if compared with <em>n</em>-type ones. It is thus important to design new <em>p</em>-type materials with superior thermoelectric performance. AgSbTe₂ has received plenty of attention as a promising <em>p</em>-type material candidate due to its intrinsically low thermal conductivity, which is further decreased by introducing vacancies and substitutional point defects by alloying with Bi₂Te₃ in this work. With the additional help of Cd substitution at the Sb site, the optimized carrier concentration leads to a peak <em>zT</em> value of 0.93 at 450 K for (AgSb_0.98Cd_0.02Te₂)_0.9(Bi₂Te₃)_0.1, and the corresponding single-leg device achieves a conversion efficiency of <em>∼</em>4.2 % at a temperature gradient Δ<em>T</em> of ∼162 K. By further pairing with an <em>n</em>-type Ag₂Se leg, a conversion efficiency of ∼1.8 % is realized at a Δ<em>T</em> of ∼93 K for the obtained module, suggesting its potential applications in the low-grade heat recovery.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101692"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143560854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing atmospheric water harvesting on hydrophilic-superhydrophobic hybrid surfaces through wettability gradient and synergistic diversion channel","authors":"Z.J. Cheng ,&nbsp;J.P. Qu ,&nbsp;Y.J. Liu ,&nbsp;W.J. Wu ,&nbsp;P.C. He ,&nbsp;S. Li ,&nbsp;J. Zhao ,&nbsp;J.L. Mo","doi":"10.1016/j.mtphys.2025.101691","DOIUrl":"10.1016/j.mtphys.2025.101691","url":null,"abstract":"<div><div>Climate change and resource depletion have exacerbated freshwater shortages, underscoring the urgent need for sustainable water resources. Atmospheric water harvesting technology, inspired by natural structures-especially fog collection on hydrophilic-superhydrophobic hybrid surfaces-offers a feasible solution due to its simple fabrication process, high collection efficiency, and zero energy consumption. While hydrophilic-superhydrophobic hybrid surfaces show potential for improving water collection efficiency, research on the mechanisms of droplet nucleation, growth, detachment, and transport remains limited. In this study, a hydrophilic porous hybrid surface with tunable wettability was fabricated by adjusting laser processing parameters, achieving a maximum collection efficiency of 1874.7 mg/cm²/h at a contact angle of 6°. The surface energy difference caused by the wettability gradient on this superhydrophilic-superhydrophobic hybrid surface accelerated droplet detachment and transport. Additionally, the introduction of single-row and multi-row diversion channels disrupted the droplet's force equilibrium and enhanced its directional sliding, further increasing the collection efficiency to 3623.1 mg/cm²/h and 4016.9 mg/cm²/h, respectively. Simulation results indicate that the combined effects of wettability-driven forces and Laplace pressure significantly improve the efficiency of droplet nucleation, growth, detachment, and sliding. The tunable wettability hybrid surface developed in this study is highly versatile and can be applied to a wide range of substrates, showcasing substantial potential for atmospheric water harvesting offering a sustainable water resource solution for arid regions.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101691"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143532899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neural network–enabled accelerated discovery of multifunctional metamaterials for adaptive multispectral stealth applications","authors":"Wei Chen ,&nbsp;Yuping Duan ,&nbsp;Da Ma ,&nbsp;Meng Wang ,&nbsp;Shude Gu ,&nbsp;Jiangyong Liu ,&nbsp;Yupeng Shi ,&nbsp;Yang Yang","doi":"10.1016/j.mtphys.2025.101696","DOIUrl":"10.1016/j.mtphys.2025.101696","url":null,"abstract":"<div><div>The development of advanced multispectral compatible stealth materials (CSMs) based on metamaterials faces significant challenges, including computational inefficiency, prohibitive costs, and the persistent issue of local optima in conventional design approaches. This study presents a transformative inverse design framework that revolutionizes the field by enabling rapid optimization within a quasi-infinite solution space. Departing from traditional low-dimensional design paradigms that are constrained by limited solution spaces and excessive reliance on manual intervention, our innovative approach introduces three key advancements: (1) a randomized cut-line coding methodology that generates an expansive, high-dimensional design space capable of addressing diverse stealth requirements; (2) a novel hybrid intelligence system combining genetic algorithms with neural networks for unprecedented computational efficiency and design flexibility; and (3) a multilayer architecture integrating conductive surface materials that achieves remarkable multispectral performance. The resulting CSMs, with a mere 1.24 mm thickness and 2.22 kg/m² surface density, demonstrate exceptional capabilities, including ultrabroadband antireflection (reflectivity &lt;0.1 across 8.9–18 GHz), dynamic multiband performance modulation (tunable within 6–18 GHz), radar cross-section reduction, and beam deflection - all programmable through customized fitness functions. Furthermore, the materials exhibit superior infrared stealth characteristics, achieving emissivity values as low as 0.3. This work establishes a new paradigm for the development of adaptive multispectral stealth materials, offering unprecedented versatility in diverse detection environments.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101696"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143561280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrahigh responsivity solar-blind high electron mobility photodetector utilizing a β-Ga2O3/GaN heterojunction","authors":"Zeming Li ,&nbsp;Rensheng Shen ,&nbsp;Yuantao Zhang ,&nbsp;Guoqiang Zhong ,&nbsp;Yuchun Chang ,&nbsp;Hongwei Liang ,&nbsp;Gaoqiang Deng ,&nbsp;Xiaochuan Xia ,&nbsp;Wancheng Li ,&nbsp;Baolin Zhang","doi":"10.1016/j.mtphys.2025.101683","DOIUrl":"10.1016/j.mtphys.2025.101683","url":null,"abstract":"<div><div>β gallium oxide (β-Ga₂O₃) is considered as a primary choice for solar-blind ultraviolet (SBUV) detection because of its advantages such as intrinsic solar-blindness and robust stability. Nevertheless, the inherent low electron mobility of β-Ga₂O₃ poses a significant challenge to its application. Here, β-Ga₂O₃ films were integrated with gallium nitride (GaN) substrates through metal-organic chemical vapor deposition (MOCVD). Based on the obtained heterojunctions, a solar-blind high electron mobility photodetector (HEMPD) was developed. With the help of the minimal conduction band offset (0.12 eV), the photo-generated carriers are able to almost unhindered move between β-Ga₂O₃ and GaN, and drift in GaN under an external field. Leveraging the high electron mobility advantage of GaN, the HEMPD achieves a responsivity (R) of 2.96 × 10⁴ A/W and an external quantum efficiency (EQE) of 1.44 × 10⁷ %, even surpassing some β-Ga₂O₃-based avalanche photodetectors (APDs). Furthermore, the indirect contact between GaN and electrodes significantly improves the SBUV/UV-A rejection ratio of our HEMPD compared to other vertical PDs based on β-Ga₂O₃/GaN heterojunctions. This study provides crucial insights for overcoming the low electron mobility limit of β-Ga₂O₃-based PDs.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101683"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143477571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interlaced nanotwinned diamond and its deformation mechanism under pure shear strain","authors":"Mingqiang Zhang ,&nbsp;Yabei Wu ,&nbsp;Ye Sheng ,&nbsp;Jing Huang ,&nbsp;Yanxiao Hu ,&nbsp;Xiaoxin Xu ,&nbsp;Xuezhi Ke ,&nbsp;Wenqing Zhang","doi":"10.1016/j.mtphys.2025.101685","DOIUrl":"10.1016/j.mtphys.2025.101685","url":null,"abstract":"<div><div>While there is a relatively clear understanding of the deformation mechanisms of parallel nanotwinned diamonds with a single-orientated twin plane under shear strain from both experimental and theoretical studies, significant discrepancies remain between single-orientated parallel twins and experimentally observed twinned structures. These discrepancies hinder a comprehensive explanation of the structural evolution and deformation mechanisms in real twinned diamonds. To address this gap, we constructed an interlaced nanotwinned diamond structure with coexisting twins of different orientations and investigated its deformation mechanisms under pure shear strain. The interlaced twins with different orientations inevitably lead to the coexistence of <em>sp</em>³ bonds and <em>sp</em>² line defects at the intersecting sites. Our findings reveal that under shear strain, the ideal twin interfaces in the interlaced nanotwinned diamond structure first undergo flip, transforming into a defective parallel nanotwinned diamond structure. As shear strain increases, this defective structure evolves into a unique diamond/graphite interface structure. Due to the strong local carbon bonds associated with <em>sp</em>² defects, graphitization lags behind that of <em>sp</em>³ carbon bonds, leading to the formation of pentagonal ring structures at the interface. This imparts edge dislocation characteristics to the interface structure, which is significantly different from the diamond/graphite interfaces observed in high-temperature and high-pressure experiments on graphite. Calculations further indicate that continued increase in shear strain may lead to a series of transformations among diamond/graphite interface structures, defective diamond structures, and back to diamond/graphite interface structures. This study provides important insights into the deformation mechanisms of interlaced nanotwinned diamonds under extreme conditions and reveals a new type of diamond/graphite interface structure.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101685"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composite perovskite-type ZnSnO3 improves the figure of merit and module efficiency of Bi0.4Sb1.6Te3 thermoelectrics","authors":"Yongye Ding ,&nbsp;Lidong Chen ,&nbsp;Qiang Zhang ,&nbsp;Ruyuan Li ,&nbsp;Ruijie Li ,&nbsp;Lianghan Fan ,&nbsp;Xiaojian Tan ,&nbsp;Jiehua Wu ,&nbsp;Guo-Qiang Liu ,&nbsp;Jun Jiang","doi":"10.1016/j.mtphys.2025.101697","DOIUrl":"10.1016/j.mtphys.2025.101697","url":null,"abstract":"<div><div>Thermoelectric (TE) power generators provide an effective solution for recovering low-grade heat, driving the development of high-performance Bi₂Te₃ alloys. In this study, we enhanced the peak <em>ZT</em> to 1.43 at 350 K by incorporating perovskite-type ZnSnO₃ nanoparticles into Bi_0.4Sb_1.6Te₃, surpassing the performance of most (Bi,Sb)₂Te₃-based composites. The enhancement is attributed to the in-situ reaction between the decomposition products and the matrix, which optimizes hole concentration and enhances the density-of-states effective mass via the energy filtering effect, with minimal loss in hole mobility. Concurrently, microstructural evolution, including high-density twins and oxide nanoprecipitates, significantly reduces lattice thermal conductivity. These combined effects result in a 28 % improvement in the TE quality factor at 300 K, reaching 0.63 for the Bi_0.4Sb_1.6Te₃ + 0.4 wt% ZnSnO₃ sample. More significantly, when coupled with <em>n</em>-type zone-melted Bi₂Te_2.7Se_0.3, the well-designed 17-pair TE module achieves a conversion efficiency of 6.6 % under a 200 K temperature gradient, surpassing the majority of reported Bi₂Te₃-based modules, which further demonstrates the efficacy of the ZnSnO₃ compositing strategy and highlights the great potential for practical applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101697"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143569668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"NEA GaAs photocathode for electron source: From growth, cleaning, activation to performance","authors":"Xiaohui Wang ,&nbsp;Minghong Shi ,&nbsp;Lipeng Su ,&nbsp;Lifeng Yang ,&nbsp;Xuxin Deng ,&nbsp;Yifan Zhang ,&nbsp;Haowen Tan","doi":"10.1016/j.mtphys.2025.101680","DOIUrl":"10.1016/j.mtphys.2025.101680","url":null,"abstract":"<div><div>Benefitting from excellent QE and high polarization, GaAs-based photocathode becomes the most promising candidate for electron source and has made rapid progress in the past 20 years. In this paper, growth, cleaning, and activation are reviewed in sequence, and effects of different parameters on QE and polarization are explored. The QE of GaAs-based photocathode is mainly distributed in the band range of 350–932 nm, and the maximum can reach 49.45 %. QE converges higher as cleaning temperature increases, illustrating that higher annealing temperature can considerably elevate the possibility of obtaining a high QE even if impurities can be eliminated at lower temperature. The optimal activation time for Cs/O activation ranges from 50 to 90 min, and the optimal Cs/O alternations ranges from 7 to 11 times. The operating wavelength of polarized photocathode is above 680 nm while polarization of most superlattice photocathodes can exceed 80 % with QE lower than 1 %. Moreover, an increase in QE leads to a significant decrease in polarization for one superlattice photocathode, indicating that high QE and high polarization cannot be simultaneously achieved. It is hoped that this review will draw more attention to GaAs-based photocathode and promote understanding and application of GaAs-based photocathode.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101680"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-functional synaptic memristor for neuromorphic pattern recognition and image compression","authors":"Hao Sun,&nbsp;Siyuan Li,&nbsp;Xiaofei Dong,&nbsp;Fengxia Yang,&nbsp;Xiang Zhang,&nbsp;Jianbiao Chen,&nbsp;Xuqiang Zhang,&nbsp;Jiangtao Chen,&nbsp;Yun Zhao,&nbsp;Yan Li","doi":"10.1016/j.mtphys.2025.101684","DOIUrl":"10.1016/j.mtphys.2025.101684","url":null,"abstract":"<div><div>A two-terminal artificial synaptic memristor capable of emulating the discrimination ability in human brain is an essential prerequisite for realizing neuromorphic computing architectures through straightforward crossbar array, however, it is still a challenge yet. Here, a multi-functional synaptic memristor is reported, based on bismuth oxybromide (BiOBr) nanosheets, in which enables advanced pattern-discriminating and image compression synaptic functionality. The device exhibits stable resistance switching with an On/Off ratio of ∼30.4 and pronounced electrically-induced synaptic plasticity. The device array can achieve a classification recognition accuracy of 70.98 % on CIFAR-10 dataset, significantly outperforming the 36.35 % accuracy obtained using traditional gradient descent algorithms. By encoding image pixel values into temporal pulse sequences, the device can enable high-precision image compression, maintaining 94.01 % classification accuracy on MNIST dataset with greatly reduced trainable parameters (from 13550 to 2630) and shortened training time (from 252 to 65 s). These findings suggest BiOBr nanosheets could facilitate efficient memristor-based artificial intelligence applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101684"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143485646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}