Materials Today Physics最新文献

{"title":"Neural network–enabled accelerated discovery of multifunctional metamaterials for adaptive multispectral stealth applications","authors":"Wei Chen ,&nbsp;Yuping Duan ,&nbsp;Da Ma ,&nbsp;Meng Wang ,&nbsp;Shude Gu ,&nbsp;Jiangyong Liu ,&nbsp;Yupeng Shi ,&nbsp;Yang Yang","doi":"10.1016/j.mtphys.2025.101696","DOIUrl":"10.1016/j.mtphys.2025.101696","url":null,"abstract":"<div><div>The development of advanced multispectral compatible stealth materials (CSMs) based on metamaterials faces significant challenges, including computational inefficiency, prohibitive costs, and the persistent issue of local optima in conventional design approaches. This study presents a transformative inverse design framework that revolutionizes the field by enabling rapid optimization within a quasi-infinite solution space. Departing from traditional low-dimensional design paradigms that are constrained by limited solution spaces and excessive reliance on manual intervention, our innovative approach introduces three key advancements: (1) a randomized cut-line coding methodology that generates an expansive, high-dimensional design space capable of addressing diverse stealth requirements; (2) a novel hybrid intelligence system combining genetic algorithms with neural networks for unprecedented computational efficiency and design flexibility; and (3) a multilayer architecture integrating conductive surface materials that achieves remarkable multispectral performance. The resulting CSMs, with a mere 1.24 mm thickness and 2.22 kg/m² surface density, demonstrate exceptional capabilities, including ultrabroadband antireflection (reflectivity &lt;0.1 across 8.9–18 GHz), dynamic multiband performance modulation (tunable within 6–18 GHz), radar cross-section reduction, and beam deflection - all programmable through customized fitness functions. Furthermore, the materials exhibit superior infrared stealth characteristics, achieving emissivity values as low as 0.3. This work establishes a new paradigm for the development of adaptive multispectral stealth materials, offering unprecedented versatility in diverse detection environments.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101696"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143561280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrahigh responsivity solar-blind high electron mobility photodetector utilizing a β-Ga2O3/GaN heterojunction","authors":"Zeming Li ,&nbsp;Rensheng Shen ,&nbsp;Yuantao Zhang ,&nbsp;Guoqiang Zhong ,&nbsp;Yuchun Chang ,&nbsp;Hongwei Liang ,&nbsp;Gaoqiang Deng ,&nbsp;Xiaochuan Xia ,&nbsp;Wancheng Li ,&nbsp;Baolin Zhang","doi":"10.1016/j.mtphys.2025.101683","DOIUrl":"10.1016/j.mtphys.2025.101683","url":null,"abstract":"<div><div>β gallium oxide (β-Ga₂O₃) is considered as a primary choice for solar-blind ultraviolet (SBUV) detection because of its advantages such as intrinsic solar-blindness and robust stability. Nevertheless, the inherent low electron mobility of β-Ga₂O₃ poses a significant challenge to its application. Here, β-Ga₂O₃ films were integrated with gallium nitride (GaN) substrates through metal-organic chemical vapor deposition (MOCVD). Based on the obtained heterojunctions, a solar-blind high electron mobility photodetector (HEMPD) was developed. With the help of the minimal conduction band offset (0.12 eV), the photo-generated carriers are able to almost unhindered move between β-Ga₂O₃ and GaN, and drift in GaN under an external field. Leveraging the high electron mobility advantage of GaN, the HEMPD achieves a responsivity (R) of 2.96 × 10⁴ A/W and an external quantum efficiency (EQE) of 1.44 × 10⁷ %, even surpassing some β-Ga₂O₃-based avalanche photodetectors (APDs). Furthermore, the indirect contact between GaN and electrodes significantly improves the SBUV/UV-A rejection ratio of our HEMPD compared to other vertical PDs based on β-Ga₂O₃/GaN heterojunctions. This study provides crucial insights for overcoming the low electron mobility limit of β-Ga₂O₃-based PDs.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101683"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143477571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interlaced nanotwinned diamond and its deformation mechanism under pure shear strain","authors":"Mingqiang Zhang ,&nbsp;Yabei Wu ,&nbsp;Ye Sheng ,&nbsp;Jing Huang ,&nbsp;Yanxiao Hu ,&nbsp;Xiaoxin Xu ,&nbsp;Xuezhi Ke ,&nbsp;Wenqing Zhang","doi":"10.1016/j.mtphys.2025.101685","DOIUrl":"10.1016/j.mtphys.2025.101685","url":null,"abstract":"<div><div>While there is a relatively clear understanding of the deformation mechanisms of parallel nanotwinned diamonds with a single-orientated twin plane under shear strain from both experimental and theoretical studies, significant discrepancies remain between single-orientated parallel twins and experimentally observed twinned structures. These discrepancies hinder a comprehensive explanation of the structural evolution and deformation mechanisms in real twinned diamonds. To address this gap, we constructed an interlaced nanotwinned diamond structure with coexisting twins of different orientations and investigated its deformation mechanisms under pure shear strain. The interlaced twins with different orientations inevitably lead to the coexistence of <em>sp</em>³ bonds and <em>sp</em>² line defects at the intersecting sites. Our findings reveal that under shear strain, the ideal twin interfaces in the interlaced nanotwinned diamond structure first undergo flip, transforming into a defective parallel nanotwinned diamond structure. As shear strain increases, this defective structure evolves into a unique diamond/graphite interface structure. Due to the strong local carbon bonds associated with <em>sp</em>² defects, graphitization lags behind that of <em>sp</em>³ carbon bonds, leading to the formation of pentagonal ring structures at the interface. This imparts edge dislocation characteristics to the interface structure, which is significantly different from the diamond/graphite interfaces observed in high-temperature and high-pressure experiments on graphite. Calculations further indicate that continued increase in shear strain may lead to a series of transformations among diamond/graphite interface structures, defective diamond structures, and back to diamond/graphite interface structures. This study provides important insights into the deformation mechanisms of interlaced nanotwinned diamonds under extreme conditions and reveals a new type of diamond/graphite interface structure.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101685"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143496028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composite perovskite-type ZnSnO3 improves the figure of merit and module efficiency of Bi0.4Sb1.6Te3 thermoelectrics","authors":"Yongye Ding ,&nbsp;Lidong Chen ,&nbsp;Qiang Zhang ,&nbsp;Ruyuan Li ,&nbsp;Ruijie Li ,&nbsp;Lianghan Fan ,&nbsp;Xiaojian Tan ,&nbsp;Jiehua Wu ,&nbsp;Guo-Qiang Liu ,&nbsp;Jun Jiang","doi":"10.1016/j.mtphys.2025.101697","DOIUrl":"10.1016/j.mtphys.2025.101697","url":null,"abstract":"<div><div>Thermoelectric (TE) power generators provide an effective solution for recovering low-grade heat, driving the development of high-performance Bi₂Te₃ alloys. In this study, we enhanced the peak <em>ZT</em> to 1.43 at 350 K by incorporating perovskite-type ZnSnO₃ nanoparticles into Bi_0.4Sb_1.6Te₃, surpassing the performance of most (Bi,Sb)₂Te₃-based composites. The enhancement is attributed to the in-situ reaction between the decomposition products and the matrix, which optimizes hole concentration and enhances the density-of-states effective mass via the energy filtering effect, with minimal loss in hole mobility. Concurrently, microstructural evolution, including high-density twins and oxide nanoprecipitates, significantly reduces lattice thermal conductivity. These combined effects result in a 28 % improvement in the TE quality factor at 300 K, reaching 0.63 for the Bi_0.4Sb_1.6Te₃ + 0.4 wt% ZnSnO₃ sample. More significantly, when coupled with <em>n</em>-type zone-melted Bi₂Te_2.7Se_0.3, the well-designed 17-pair TE module achieves a conversion efficiency of 6.6 % under a 200 K temperature gradient, surpassing the majority of reported Bi₂Te₃-based modules, which further demonstrates the efficacy of the ZnSnO₃ compositing strategy and highlights the great potential for practical applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101697"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143569668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"NEA GaAs photocathode for electron source: From growth, cleaning, activation to performance","authors":"Xiaohui Wang ,&nbsp;Minghong Shi ,&nbsp;Lipeng Su ,&nbsp;Lifeng Yang ,&nbsp;Xuxin Deng ,&nbsp;Yifan Zhang ,&nbsp;Haowen Tan","doi":"10.1016/j.mtphys.2025.101680","DOIUrl":"10.1016/j.mtphys.2025.101680","url":null,"abstract":"<div><div>Benefitting from excellent QE and high polarization, GaAs-based photocathode becomes the most promising candidate for electron source and has made rapid progress in the past 20 years. In this paper, growth, cleaning, and activation are reviewed in sequence, and effects of different parameters on QE and polarization are explored. The QE of GaAs-based photocathode is mainly distributed in the band range of 350–932 nm, and the maximum can reach 49.45 %. QE converges higher as cleaning temperature increases, illustrating that higher annealing temperature can considerably elevate the possibility of obtaining a high QE even if impurities can be eliminated at lower temperature. The optimal activation time for Cs/O activation ranges from 50 to 90 min, and the optimal Cs/O alternations ranges from 7 to 11 times. The operating wavelength of polarized photocathode is above 680 nm while polarization of most superlattice photocathodes can exceed 80 % with QE lower than 1 %. Moreover, an increase in QE leads to a significant decrease in polarization for one superlattice photocathode, indicating that high QE and high polarization cannot be simultaneously achieved. It is hoped that this review will draw more attention to GaAs-based photocathode and promote understanding and application of GaAs-based photocathode.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101680"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-functional synaptic memristor for neuromorphic pattern recognition and image compression","authors":"Hao Sun,&nbsp;Siyuan Li,&nbsp;Xiaofei Dong,&nbsp;Fengxia Yang,&nbsp;Xiang Zhang,&nbsp;Jianbiao Chen,&nbsp;Xuqiang Zhang,&nbsp;Jiangtao Chen,&nbsp;Yun Zhao,&nbsp;Yan Li","doi":"10.1016/j.mtphys.2025.101684","DOIUrl":"10.1016/j.mtphys.2025.101684","url":null,"abstract":"<div><div>A two-terminal artificial synaptic memristor capable of emulating the discrimination ability in human brain is an essential prerequisite for realizing neuromorphic computing architectures through straightforward crossbar array, however, it is still a challenge yet. Here, a multi-functional synaptic memristor is reported, based on bismuth oxybromide (BiOBr) nanosheets, in which enables advanced pattern-discriminating and image compression synaptic functionality. The device exhibits stable resistance switching with an On/Off ratio of ∼30.4 and pronounced electrically-induced synaptic plasticity. The device array can achieve a classification recognition accuracy of 70.98 % on CIFAR-10 dataset, significantly outperforming the 36.35 % accuracy obtained using traditional gradient descent algorithms. By encoding image pixel values into temporal pulse sequences, the device can enable high-precision image compression, maintaining 94.01 % classification accuracy on MNIST dataset with greatly reduced trainable parameters (from 13550 to 2630) and shortened training time (from 252 to 65 s). These findings suggest BiOBr nanosheets could facilitate efficient memristor-based artificial intelligence applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101684"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143485646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Weakening the polarity of chemical bonds to improve carrier mobility for realizing high thermoelectric performance in N-typed Mg3(Sb,Bi)2","authors":"Jisheng Liang ,&nbsp;Qi Zhou ,&nbsp;Zhengniu Pan ,&nbsp;Zhongwei Zhang ,&nbsp;Fengting Mao ,&nbsp;Shiyuan Zhao ,&nbsp;Sijing Zhu ,&nbsp;Jun-liang Chen ,&nbsp;Jie Gao ,&nbsp;Lei Miao","doi":"10.1016/j.mtphys.2025.101687","DOIUrl":"10.1016/j.mtphys.2025.101687","url":null,"abstract":"<div><div>N-type Mg₃(Sb,Bi)₂ Zintl compounds have emerged as promising candidates for high-temperature energy applications due to their exceptional thermoelectric performance, making them pivotal in the development of sustainable energy technologies. Despite recent advancements, these materials suffer from low carrier mobility caused by polar covalent bonds, which degrade electrical conductivity and overall thermoelectric efficiency. In this study, we introduce beryllium, a bivalent homologous group element, as a cationic dopant to substitute for Mg in Mg_3.2Sb_1.5Bi_0.49Te_0.01. This substitution weakens the polarity of the chemical bonds, significantly enhancing carrier mobility from ∼62 to ∼138 cm² V⁻¹ s⁻¹. Theoretical analysis using the single parabolic band model confirms that the effective mass decreases with increasing Be doping content. First-principles calculations further reveal that Be doping leads to stronger charge localization due to their higher electronegativity and shifts the Fermi level into the conduction band and narrows the band gap, strengthening the n-type semiconducting properties. This optimization yields an impressive power factor of ∼2022 μW m⁻¹ K⁻² at 523 K in Mg_3.12Be_0.08Sb_1.5Bi_0.49Te_0.01, owing to the improved carrier mobility. Furthermore, the Be atoms as point defects induces significant lattice distortions and strains, effectively suppressing lattice thermal conductivity to ∼0.38 W m⁻¹ K⁻¹ at 573 K. Consequently, we achieve a remarkable <em>ZT</em> of 1.54 at 673 K and a high average <em>ZT</em> of 1.17 in n-type Mg_3.14Be_0.06Sb_1.5Bi_0.49Te_0.01. Our work offers new strategies to enhance the thermoelectric properties of n-type Mg₃(Sb,Bi)₂ materials, advancing high-temperature sustainable energy technologies.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101687"},"PeriodicalIF":10.0,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coexisting multi-valence states of doped Ta into β-Ga2O3 films on B-doped mono-diamond to achieve high performance heterojunction detector","authors":"Xinglong Han,&nbsp;Yongsheng Wang,&nbsp;Yanpeng Gong,&nbsp;Wenru Jia,&nbsp;Jianwei Wang,&nbsp;Xiaoqin Yang,&nbsp;Shengwang Yu","doi":"10.1016/j.mtphys.2025.101682","DOIUrl":"10.1016/j.mtphys.2025.101682","url":null,"abstract":"<div><div>Ga₂O₃, as an ultra-wide bandgap semiconductor, has promising applications, <em>e.g.</em> solar-blind ultraviolet detectors, but is hindered by issues related to thermal conductivity and the P-type doping method. This study prepared P-N heterojunction via Ta-doped <em>β</em>-Ga₂O₃ films on B-doped mono-diamonds. We found that the multi-valence states of doped Ta coexisted in <em>β</em>-Ga₂O₃ films, leading to a transmittance over 90 % caused by the formation of Ta₂O₅. Moreover, the dark current was four orders of magnitude higher than the intrinsic <em>β</em>-Ga₂O₃ film, which was attributed to the Ga³⁺ being replaced by Ta⁵⁺. The B-doped mono-diamond exhibited a high carrier concentration of 5.08 × 10¹⁸ cm⁻³ and a low resistivity of 5.92 × 10⁻³ Ω cm due to the C⁴⁺ being replaced by B³⁺. The Ta-doped <em>β</em>-Ga₂O₃/B-doped mono-diamond heterojunction detector exhibited excellent photoelectric properties with a high responsivity of 64 mA/W at +10 V bias voltage, providing a novel approach for solving the <em>β</em>-Ga₂O₃/diamond challenge to realize high-performance detectors.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101682"},"PeriodicalIF":10.0,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143463052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Abnormal thermal conductivity increase in β-Ga2O3 by an unconventional bonding mechanism using machine-learning potential","authors":"Wu-Xing Zhou ,&nbsp;Cheng-Wei Wu ,&nbsp;Hao-Ran Cao ,&nbsp;Yu-Jia Zeng ,&nbsp;Guofeng Xie ,&nbsp;Gang Zhang","doi":"10.1016/j.mtphys.2025.101677","DOIUrl":"10.1016/j.mtphys.2025.101677","url":null,"abstract":"<div><div><em>β-</em>Ga₂O₃, with its ultrawide band gap (∼4.9 eV) and high critical electric field, holds potential in power electronics but is limited by low thermal conductivity, which is critical to the performance and reliability because the high level of heat flux density induced by the extremely high levels of power density. Combining first-principles calculations, machine-learning potentials, and solving the phonon Boltzmann transport equation, we found that substituting octahedral-coordinated Ga with Al significantly enhances thermal conductivity from 100K to 800K. At room temperature, Al-substituted β-Ga2O3 achieves 38.91 W/mK, more than 2-fold that of pristine <em>β</em>-Ga₂O₃ (17.10 W/mK) and even higher than <em>β</em>-Al₂O₃ (30.52 W/mK). This enhancement, unusual due to the heavier atomic mass and mixed mass distribution, is rooted in suppressed anharmonic characteristics caused by reduced bonding strength inhomogeneity. Our results may inspire the rational design of materials with tailored thermal properties through chemical bonding mechanisms.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101677"},"PeriodicalIF":10.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable, washable piezoresistive pressure sensor based on polyurethane sponge coated with composite CNT/CB/TPU","authors":"Yan Wang ,&nbsp;Wenbo Luo ,&nbsp;Yading Wen ,&nbsp;Jiafeng Zhao ,&nbsp;Chang Chen ,&nbsp;Zhuo Chen ,&nbsp;Xiao-Sheng Zhang","doi":"10.1016/j.mtphys.2025.101681","DOIUrl":"10.1016/j.mtphys.2025.101681","url":null,"abstract":"<div><div>Flexible pressure sensors are widely used in human health detection and human-machine interface interaction. In this paper, a 3D porous flexible pressure sensor based on carbon nanotubes (CNT)/carbon black (CB)/thermoplastic polyurethane (TPU)/polyurethane (PU) sponge is studied. This sensor exhibits good sensitivity, stability and washability. The sensing layer utilizes a conductive network formed by the synergistic effect of CNT and CB, providing excellent performance for the sensor. TPU functions as an adhesive, ensuring the bonding of the conductive material and providing washability to the sensor. Additionally, CB particles enhance the sensitivity of the sensor at low pressure range. The sensor demonstrates a response time of 119 ms, a recovery time of 59 ms, and maintains non-attenuating durability for more than 1000 cycles. This multi-functional pressure sensor can provide a new platform for the designing and developing wearable health monitoring devices, as well as an efficient human-machine interface.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101681"},"PeriodicalIF":10.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143463084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}