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Lattice distortion realizing the “treble-high” thermoelectric module 晶格畸变实现“三高”热电模块
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-01-01 DOI: 10.1016/j.mtphys.2024.101635
Hui Pan, Lixia Zhang, Huiyuan Geng, Qing Chang, Bo Zhang, Zhan Sun
{"title":"Lattice distortion realizing the “treble-high” thermoelectric module","authors":"Hui Pan,&nbsp;Lixia Zhang,&nbsp;Huiyuan Geng,&nbsp;Qing Chang,&nbsp;Bo Zhang,&nbsp;Zhan Sun","doi":"10.1016/j.mtphys.2024.101635","DOIUrl":"10.1016/j.mtphys.2024.101635","url":null,"abstract":"<div><div>Desirable diffusion barrier layers play a fatal role in achieving long-term high-temperature stable service for the skutterudites (SKDs)-based thermoelectric (TE) device. Consequently, we proposed a screening strategy for diffusion barrier layers based on the lattice distortion design, identifying the Fe<sub>80</sub>V<sub>20</sub> alloy as a promising candidate barrier layer for p-type SKD materials. Theoretically, we found that the significant lattice distortion induced by the addition of V can lead to a higher activation energy barrier for Fe migration (155 % higher than Cr addition). Experimentally, compared to Fe<sub>80</sub>Cr<sub>20</sub> joints, the Fe<sub>80</sub>V<sub>20</sub> joints exhibit outstanding interfacial reliability and stability. Eventually, we achieved a “treble-high” SKDs-based TE module, which possesses a record high conversion efficiency of 10.7 % and a high-power density of 2.18 W cm<sup>−2</sup> under a temperature difference of 585 K, and high long-term reliability. This work demonstrates a novel and effective strategy for screening diffusion barrier layers in TE devices, laying a solid foundation for their practical application in power generation.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101635"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142870011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal transport properties of polycrystalline Bi4SeCl2O4 with various texturizations and densities 不同织构和密度下多晶Bi4SeCl2O4的热输运性质
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-01-01 DOI: 10.1016/j.mtphys.2024.101618
Linjie Wu , Xinyue Zhang , Changyuan Li , Qingyu Bai , Zhiwei Chen , Yanzhong Pei
{"title":"Thermal transport properties of polycrystalline Bi4SeCl2O4 with various texturizations and densities","authors":"Linjie Wu ,&nbsp;Xinyue Zhang ,&nbsp;Changyuan Li ,&nbsp;Qingyu Bai ,&nbsp;Zhiwei Chen ,&nbsp;Yanzhong Pei","doi":"10.1016/j.mtphys.2024.101618","DOIUrl":"10.1016/j.mtphys.2024.101618","url":null,"abstract":"<div><div>Bi<sub>4</sub>SeCl<sub>2</sub>O<sub>4</sub>, has recently drawn significant interest for the reported extremely low thermal conductivity (<em>κ</em>), making it a promising material for thermoelectric applications. The anisotropy nature of this material allows for the manipulation of transport properties for optimization in a certain direction. However, there is still a lack of systematic research on the role of texturization in the thermal transport properties of Bi<sub>4</sub>SeCl<sub>2</sub>O<sub>4</sub>. In this work, single-phase polycrystalline Bi<sub>4</sub>SeCl<sub>2</sub>O<sub>4</sub> was synthesized by solid-phase reaction and hot-pressing. The effect of both texturization and density on the thermal conductivity of Bi<sub>4</sub>SeCl<sub>2</sub>O<sub>4</sub> was experimentally investigated in detail. The results show that once the density is higher than 80 %, this work demonstrates a <em>κ</em> of &gt;0.4 W/m-K even when the orientation factor reaches ∼0.5. The <em>κ</em> was verified by different measurement techniques. In addition, the heat insulation performance of Bi<sub>4</sub>SeCl<sub>2</sub>O<sub>4</sub> was found to be intermediate between that of PTFE and silica.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101618"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Insight into the effect of force error on the thermal conductivity from machine-learned potentials 从机器学习势分析力误差对热导率的影响
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-01-01 DOI: 10.1016/j.mtphys.2024.101638
Wenjiang Zhou , Nianjie Liang , Xiguang Wu , Shiyun Xiong , Zheyong Fan , Bai Song
{"title":"Insight into the effect of force error on the thermal conductivity from machine-learned potentials","authors":"Wenjiang Zhou ,&nbsp;Nianjie Liang ,&nbsp;Xiguang Wu ,&nbsp;Shiyun Xiong ,&nbsp;Zheyong Fan ,&nbsp;Bai Song","doi":"10.1016/j.mtphys.2024.101638","DOIUrl":"10.1016/j.mtphys.2024.101638","url":null,"abstract":"<div><div>Machine-learned potentials (MLPs) have been extensively used to obtain the lattice thermal conductivity (<em>κ</em>) via atomistic simulations. However, the impact of force errors in various MLPs on thermal transport has not been widely recognized and remains to be fully understood. Here, we employ MLP-driven molecular dynamics (MD) and anharmonic lattice dynamics (LD) to systematically investigate how the calculated <em>κ</em> varies with the force errors, using boron arsenide as a prototypical material to emphasize the challenges associated with high thermal conductivity. We consistently observe an underestimation of <em>κ</em> in MD simulations with different MLPs including the neuroevolution potential, deep potential, and moment tensor potential (MTP). We propose a robust second-order extrapolation scheme based on controlled force noises via the Langevin thermostat to correct this underestimation. The corrected results achieve a good agreement with previous experimental measurements from 200 K to 600 K. In contrast, the <em>κ</em> values from LD calculations with MLPs readily align with the experimental data, which is attributed to the much smaller effects of the force errors on the force-constant calculations. Our findings provide deeper physical insight into the effect of the force errors in machine-learned potentials on thermal transport, and are particularly instrumental for simulating and seeking high-<em>κ</em> materials. In addition, we also make our modified version of the MLIP package publicly accessible in order to facilitate the accurate calculation of heat current in MTP-based MD simulations.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101638"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142886809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced irradiation stability of MOSFET devices realized by improving nucleus density of CrxNbMoTaW generated by lattice shrinkage 通过提高晶格收缩产生的CrxNbMoTaW的核密度,实现了MOSFET器件辐照稳定性的增强
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-01-01 DOI: 10.1016/j.mtphys.2024.101639
Wenjing Wei , Yang Hong , Xiaolei Shi , Yang Li , Kai Cui , Tianyu Zhang , Xin Jia , Jingyang Li , Hongjun Kang , Wei Qin , Xiaohong Wu
{"title":"Enhanced irradiation stability of MOSFET devices realized by improving nucleus density of CrxNbMoTaW generated by lattice shrinkage","authors":"Wenjing Wei ,&nbsp;Yang Hong ,&nbsp;Xiaolei Shi ,&nbsp;Yang Li ,&nbsp;Kai Cui ,&nbsp;Tianyu Zhang ,&nbsp;Xin Jia ,&nbsp;Jingyang Li ,&nbsp;Hongjun Kang ,&nbsp;Wei Qin ,&nbsp;Xiaohong Wu","doi":"10.1016/j.mtphys.2024.101639","DOIUrl":"10.1016/j.mtphys.2024.101639","url":null,"abstract":"<div><div>The limited irradiation stability of metal-oxide-semiconductor field-effect transistor (MOSFET) devices has restricted their application in deep space exploration missions. Therefore, it is an urgent need to develop a new and efficient packaging hardening techniques to improve the irradiation stability of MOSFET devices. Herein, Cr<sub>0.5</sub>NbMoTaW was prepared by localized high-energy mechanical alloying and coated on the MOSFET's surface, and the packaged MOSFETs exhibit excellent irradiation stability. The threshold voltage change value of Cr<sub>0.5</sub>NbMoTaW packaged MOSFET device (0.26 V) is lower than the unpackaged MOSFET (4.15 V) after high-energy electron irradiation. Experimental and theoretical calculations show that Cr induces lattice shrinkage of Cr<sub>0.5</sub>NbMoTaW high-entropy alloys, leading to an improved density of nucleus. This increases the probability of elastic and inelastic collision between high-energy electrons and the nucleus, thus achieving excellent irradiation stability of packaged MOSFET devices. This work presents a strategy to improve the irradiation stability of MOSFET devices by using high-entropy alloy packaging.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101639"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142886810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-throughput screening of MIMII-PC6 dual-atom electrocatalysts for efficient and selective electrocatalytic reduction of CO2 to C1 and C2 products MIMII-PC6双原子电催化剂高效选择性电催化还原CO2生成C1和C2产物的高通量筛选
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2025-01-01 DOI: 10.1016/j.mtphys.2024.101613
Jing Wang , Feng Xiang , Yangyang Song , Haixia Wang , Chen Chen , Xian Zhao , Weiliu Fan
{"title":"High-throughput screening of MIMII-PC6 dual-atom electrocatalysts for efficient and selective electrocatalytic reduction of CO2 to C1 and C2 products","authors":"Jing Wang ,&nbsp;Feng Xiang ,&nbsp;Yangyang Song ,&nbsp;Haixia Wang ,&nbsp;Chen Chen ,&nbsp;Xian Zhao ,&nbsp;Weiliu Fan","doi":"10.1016/j.mtphys.2024.101613","DOIUrl":"10.1016/j.mtphys.2024.101613","url":null,"abstract":"&lt;div&gt;&lt;div&gt;Understanding the relationship between the structure, activity, and selectivity of dual-atom catalysts (DACs) in electrocatalytic CO&lt;sub&gt;2&lt;/sub&gt; reduction reaction (CO&lt;sub&gt;2&lt;/sub&gt;RR) remains challenging because of the diverse bimetallic combinations and their complex electronic interactions. Herein, we integrated high-throughput screening and density functional theory to explore the catalytic performance of 66 M&lt;sub&gt;I&lt;/sub&gt;M&lt;sub&gt;II&lt;/sub&gt;-PC&lt;sub&gt;6&lt;/sub&gt; (M&lt;sub&gt;I&lt;/sub&gt;M&lt;sub&gt;II&lt;/sub&gt; = pairs of V-Cu, Ru, Rh, Os, Ir) for the CO&lt;sub&gt;2&lt;/sub&gt;RR to C1 and C2. The results indicate that the synergistic effect between bimetals can effectively regulate the adsorption strengths of key intermediates such as ∗CO, ∗OCH&lt;sub&gt;2&lt;/sub&gt;CH&lt;sub&gt;2&lt;/sub&gt;, and C-C coupling process. Besides, the C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt; or C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;5&lt;/sub&gt;OH selectivity of the screened DACs is determined by the dominant intermediate (∗O or ∗OCH&lt;sub&gt;2&lt;/sub&gt;CH&lt;sub&gt;2&lt;/sub&gt;) generated by the protonation of ∗OCH&lt;sub&gt;2&lt;/sub&gt;CH. DAC with a smaller ΔG&lt;sub&gt;∗O&lt;/sub&gt; relative to &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mo&gt;Δ&lt;/mo&gt;&lt;mi&gt;G&lt;/mi&gt;&lt;/mrow&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mo&gt;∗&lt;/mo&gt;&lt;mtext&gt;OCH&lt;/mtext&gt;&lt;/mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/msub&gt;&lt;msub&gt;&lt;mtext&gt;CH&lt;/mtext&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; favors C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt; formation, while a larger ΔG&lt;sub&gt;∗O&lt;/sub&gt; indicates a preference for C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;5&lt;/sub&gt;OH. Through a four-step rapid screening strategy, CrCu, CrRu, CrRh, and CuRu-PC&lt;sub&gt;6&lt;/sub&gt; were identified as potential DACs for CH&lt;sub&gt;4&lt;/sub&gt; production. Furthermore, CrFe, MnOs, and MnRu-PC&lt;sub&gt;6&lt;/sub&gt; showed potential for C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;4&lt;/sub&gt; generation, while MnRh, MnIr, CoRh, and CoIr-PC&lt;sub&gt;6&lt;/sub&gt; displayed outstanding catalytic performance in generating C&lt;sub&gt;2&lt;/sub&gt;H&lt;sub&gt;5&lt;/sub&gt;OH. Notably, the intrinsic descriptors &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;φ&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;C&lt;/mi&gt;&lt;msub&gt;&lt;mi&gt;H&lt;/mi&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;mo&gt;+&lt;/mo&gt;&lt;mfrac&gt;&lt;mn&gt;1&lt;/mn&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mfrac&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mtext&gt;II&lt;/mtext&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;mo&gt;∗&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;X&lt;/mi&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;, &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;φ&lt;/mi&gt;&lt;mrow&gt;&lt;mi&gt;C&lt;/mi&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mfrac&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mtext&gt;II&lt;/mtext&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;mo&gt;∗&lt;/mo&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mrow&gt;&lt;mn&gt;2&lt;/mn&gt;&lt;msub&gt;&lt;mi&gt;R&lt;/mi&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;mo&gt;+&lt;/mo&gt;&lt;msub&gt;&lt;mi&gt;R&lt;/mi&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mtext&gt;II&lt;/mtext&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;/mrow&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/mfrac&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;, and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mi&gt;φ&lt;/mi&gt;&lt;mtext&gt;selec&lt;/mtext&gt;&lt;/msub&gt;&lt;mo&gt;=&lt;/mo&gt;&lt;mfrac&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mi&gt;d&lt;/mi&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;M&lt;/mi&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;/msub&gt;&lt;/msub&gt;&lt;mrow&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;msub&gt;&lt;mrow&gt;&lt;msub&gt;&lt;mrow&gt;&lt;mi&gt;N&lt;/mi&gt;&lt;mi&gt;d","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101613"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142797525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrigendum to ‘Excellent energy-storage performance in BNT-BT lead-free ceramics through optimized electromechanical breakdown’ [Mater. Today Phys. 47(2024) 101545] 通过优化机电击穿实现 BNT-BT 无铅陶瓷的卓越储能性能"[《今日物理学材料》47(2024) 101545] 更正
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2024-12-01 DOI: 10.1016/j.mtphys.2024.101587
Liang Wang, Wenjun Cao, Cen Liang, Changyuan Wang, Hanyu Zhao, Chunchang Wang
{"title":"Corrigendum to ‘Excellent energy-storage performance in BNT-BT lead-free ceramics through optimized electromechanical breakdown’ [Mater. Today Phys. 47(2024) 101545]","authors":"Liang Wang,&nbsp;Wenjun Cao,&nbsp;Cen Liang,&nbsp;Changyuan Wang,&nbsp;Hanyu Zhao,&nbsp;Chunchang Wang","doi":"10.1016/j.mtphys.2024.101587","DOIUrl":"10.1016/j.mtphys.2024.101587","url":null,"abstract":"","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"49 ","pages":"Article 101587"},"PeriodicalIF":10.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-soft, foldable, wearable piezoelectric sensor based on the aligned BaTiO3 nanoparticles 基于排列整齐的 BaTiO3 纳米粒子的超软、可折叠、可穿戴压电传感器
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2024-11-25 DOI: 10.1016/j.mtphys.2024.101606
Jie Zhang , Changjiang Li , Chengping Lv , Haocheng Yu , Wenjun Ma , Mengyong Lei , Xiaoming Chen , Ming Liu , Xiaohui Zhang
{"title":"Ultra-soft, foldable, wearable piezoelectric sensor based on the aligned BaTiO3 nanoparticles","authors":"Jie Zhang ,&nbsp;Changjiang Li ,&nbsp;Chengping Lv ,&nbsp;Haocheng Yu ,&nbsp;Wenjun Ma ,&nbsp;Mengyong Lei ,&nbsp;Xiaoming Chen ,&nbsp;Ming Liu ,&nbsp;Xiaohui Zhang","doi":"10.1016/j.mtphys.2024.101606","DOIUrl":"10.1016/j.mtphys.2024.101606","url":null,"abstract":"<div><div>Developing the inorganic piezoelectric particles/polymer matrix composites is a simple, effective, and low-cost strategy to manufacture the flexible, wearable sensors. But their application has been hindered by an obvious trade-off between electronic performances and mechanical deformability, because of the issue of dispersion difficulty and isolated distribution of inorganic nanofillers in matrix. Here, an ultra-soft, substrate-free, wearable piezoelectric sensor with aligned barium titanate (BTO) nanoparticles was designed and fabricated. To resolve the issue of degradation of flexibility of composites, a chemical etching treatment was introduced into the process of hydrothermal, which increased the content of tetragonal BTO nanoparticles and optimized the interaction between inorganic layer and polymer matrix. Thus, a higher sensitivity of 73.5 V/MPa was obtained by the as-prepared composites with the orientation of BTO than those of the reported BTO-based composites. Notably, the sensor with the thin functional layer demonstrated excellent stability even after 200 double-folded fatigue cycles. For this reason, the designed sensor could completely wrap or attach onto the different complex surface to simultaneously detect various dynamic signals involving the fluidic flowing, pulse rate and moved direction of body. Moreover, the foldable piezoelectric sensing array was easily fabricated by the proposed method, which offers the huge opportunity for the widespread applications in health monitoring, personal safety, and activity monitoring on the complex surface.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101606"},"PeriodicalIF":10.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142696878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mist CVD technology for gallium oxide deposition: A review 用于氧化镓沉积的雾状 CVD 技术:综述
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2024-11-21 DOI: 10.1016/j.mtphys.2024.101604
Suhao Yao , Yifan Yao , Maolin Zhang , Xueqiang Ji , Shan Li , Weihua Tang
{"title":"Mist CVD technology for gallium oxide deposition: A review","authors":"Suhao Yao ,&nbsp;Yifan Yao ,&nbsp;Maolin Zhang ,&nbsp;Xueqiang Ji ,&nbsp;Shan Li ,&nbsp;Weihua Tang","doi":"10.1016/j.mtphys.2024.101604","DOIUrl":"10.1016/j.mtphys.2024.101604","url":null,"abstract":"<div><div>Mist chemical vapor deposition (mist CVD) technology originated from early metal organic chemical vapor deposition (MOCVD) techniques. By mist CVD, High-quality oxide films are deposited by ultrasonic atomization of low-concentration precursor solutions under atmospheric pressure and relatively low temperature conditions. Mist CVD was first reported in 1990, and in 2008, Shinohara et al. applied mist CVD to the growth of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) epitaxial films. As an ultrawide bandgap (UWBG) semiconductor, Ga<sub>2</sub>O<sub>3</sub> has tremendous potential in power systems and optoelectronic devices, attracting significant attention and becoming a research hotspot in recent years. Various techniques have been explored for growing Ga<sub>2</sub>O<sub>3</sub> films. Among them, mist CVD is noted for its relatively cheap equipment, simpler operation, and competitive cost advantages, making it a promising method for Ga<sub>2</sub>O<sub>3</sub> film growth. Using mist CVD, five crystal phases (<em>α</em>, <em>β</em>, <em>γ</em>, <em>ε</em>, and <em>δ</em>) of Ga<sub>2</sub>O<sub>3</sub> films have been successfully produced, and the properties of Ga<sub>2</sub>O<sub>3</sub> films can be easily tuned through doping and alloy engineering. Additionally, semiconductor devices have been fabricated using Ga<sub>2</sub>O<sub>3</sub> films grown by mist CVD. However, challenges remain in terms of doping uniformity, crystal phase purity, and stability. This paper reviews the advancements in mist CVD for the deposition of Ga<sub>2</sub>O<sub>3</sub>, covering mist CVD equipment design, Ga<sub>2</sub>O<sub>3</sub> crystal phase control, doping and alloy modulation, and device fabrication.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"49 ","pages":"Article 101604"},"PeriodicalIF":10.0,"publicationDate":"2024-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anderson disorder related p-type conductivity and metal-insulator transition in β-Ga2O3 β-Ga2O3 中与安德森无序有关的 p 型电导率和金属-绝缘体转变
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2024-11-20 DOI: 10.1016/j.mtphys.2024.101602
Zeyu Chi , Se-Rim Park , Luka Burdiladze , Tamar Tchelidze , Jean-Michel Chauveau , Yves Dumont , Sang-Mo Koo , Zurab Kushitashvili , Amiran Bibilashvili , Gérard Guillot , Amador Pérez-Tomás , Xin-Ying Tsai , Fu-Gow Tarntair , Ray Hua Horng , Ekaterine Chikoidze
{"title":"Anderson disorder related p-type conductivity and metal-insulator transition in β-Ga2O3","authors":"Zeyu Chi ,&nbsp;Se-Rim Park ,&nbsp;Luka Burdiladze ,&nbsp;Tamar Tchelidze ,&nbsp;Jean-Michel Chauveau ,&nbsp;Yves Dumont ,&nbsp;Sang-Mo Koo ,&nbsp;Zurab Kushitashvili ,&nbsp;Amiran Bibilashvili ,&nbsp;Gérard Guillot ,&nbsp;Amador Pérez-Tomás ,&nbsp;Xin-Ying Tsai ,&nbsp;Fu-Gow Tarntair ,&nbsp;Ray Hua Horng ,&nbsp;Ekaterine Chikoidze","doi":"10.1016/j.mtphys.2024.101602","DOIUrl":"10.1016/j.mtphys.2024.101602","url":null,"abstract":"<div><div>The <em>p</em>-type doping is one of the main challenges of the emerging semiconductor <em>β-</em>Ga<sub>2</sub>O<sub>3</sub> technology. Phosphorus (P) implantation has been recently reported as a novel route to achieve <em>p</em>-type conduction on Ga<sub>2</sub>O<sub>3</sub> at room temperature. Here, P-implanted epilayers, grown onto <em>c</em>-plane sapphire revealed a pseudo-metallic behavior (<em>ρ</em> = 1.3–0.3 Ω cm) in the 300–600 K range with a hole carrier concentration of <em>p</em> ⁓ 4–6 × 10<sup>18</sup> cm<sup>−3</sup> and hole mobility of <em>μ</em> = 1.2–2.1 cm<sup>2</sup>/(V·s). At sufficiently low temperature, a metal-insulator transition arises together with an increase in the positive magnetoresistance, reaching up to 200 % (9 T) large positive magneto resistance effect at 2 K. It is suggested that an Anderson delocalization model explains the room temperature conduction, and the transition to an insulator state caused by random variation of potential related to the incorporated phosphorous in Ga<sub>2</sub>O<sub>3</sub>. We believe that the lack of shallow acceptors can be mitigated by promoting Anderson disorder through the incorporation of a high level of acceptor impurities.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"49 ","pages":"Article 101602"},"PeriodicalIF":10.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Data-driven design of thermal-mechanical multifunctional metamaterials 数据驱动的热机械多功能超材料设计
IF 1 2区 材料科学
Materials Today Physics Pub Date : 2024-11-20 DOI: 10.1016/j.mtphys.2024.101603
Xiaochang Xing , Yanxiang Wang , Jianchang Jiang , Lingling Wu , Xiaoyong Tian , Ying Li
{"title":"Data-driven design of thermal-mechanical multifunctional metamaterials","authors":"Xiaochang Xing ,&nbsp;Yanxiang Wang ,&nbsp;Jianchang Jiang ,&nbsp;Lingling Wu ,&nbsp;Xiaoyong Tian ,&nbsp;Ying Li","doi":"10.1016/j.mtphys.2024.101603","DOIUrl":"10.1016/j.mtphys.2024.101603","url":null,"abstract":"<div><div>Achieving effective control of thermal and mechanical distributions has been a long-standing goal, and metamaterials have emerged as a crucial tool for customizing functional structures to manipulate these physical fields. However, existing design paradigms do not apply to thermal-mechanical metamaterials that operate on thermal and mechanical fields simultaneously and independently. First, Due to the different geometric requirements imposed by the thermal and mechanical fields on the unit cells, there is a conflict between functional coupling and design coupling, which limits the design of thermal-mechanical metamaterials. Second, the fact that continuum mechanical equations do not remain invariant under general coordinate transformations hinders the application of conventional theories. Additionally, balancing minimal design costs, manufacturability, and optimal functionality remains a significant challenge. Here, we propose a global data-driven design method using Bayesian hyperparameter optimization. This method creates thermal-mechanical metamaterials from a large, pre-computed unit cell database. Our flexible method allows designing thermal-mechanical metamaterials with various functional combinations (e.g., cloaks, concentrators, and rotators) and shapes. Compared to traditional solutions, this approach balances manufacturability and functionality while offering unparalleled universality and low design costs. Experimental measurements validate the effectiveness of our method. Our approach can rapidly respond to new design scenarios and address design challenges related to the multi-physical effects.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"49 ","pages":"Article 101603"},"PeriodicalIF":10.0,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142673399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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