Materials Today Physics最新文献

{"title":"Transforming high-resolution imaging: A comprehensive review of advances in metasurfaces and metalenses","authors":"Nikolay Lvovich Kazanskiy ,&nbsp;Svetlana Nikolaevna Khonina ,&nbsp;Muhammad Ali Butt","doi":"10.1016/j.mtphys.2024.101628","DOIUrl":"10.1016/j.mtphys.2024.101628","url":null,"abstract":"<div><div>Meta-optics, particularly through the use of metasurfaces (MSs), have revolutionized high-resolution imaging (HRI) by enabling unprecedented control over light at the subwavelength scale. Metalenses (MLs), a key component of meta-optics, can correct chromatic aberrations and focus light with extreme precision, surpassing the limitations of traditional optics. Their compact design and ability to manipulate various wavelengths and polarizations of light allow for ultra-thin, lightweight imaging systems with enhanced resolution. These advancements are pushing the boundaries of imaging technologies in applications such as microscopy, sensing, and even consumer electronics. This review highlights recent advancements in MSs, with a focus on MLs for HRI. Additionally, the integration of deep learning techniques is explored, demonstrating enhanced imaging performance. Prospects and potential developments in ML technology are discussed, providing insights into their role in advancing next-generation imaging systems.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101628"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142820737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermal conductive radiative cooling film for local heat dissipation","authors":"Qin Ye ,&nbsp;Xingyu Chen ,&nbsp;Hongjie Yan,&nbsp;Meijie Chen","doi":"10.1016/j.mtphys.2024.101626","DOIUrl":"10.1016/j.mtphys.2024.101626","url":null,"abstract":"<div><div>Radiative cooling has attracted lots of attention recently due to its electricity-free cooling by reflecting solar radiation and emitting thermal radiation to the cold outer space. However, how to improve heat dissipation performance at above-ambient temperatures is still a challenge for outdoor flexible devices. Here a bilayer structure was designed to achieve a thin and thermal conductive radiative cooling film for local heat dissipation in outdoor flexible devices, the local heating area can be avoided by the high in-plane thermal conductive performance and heat can be efficiently dissipated to the outer environment by daytime radiative cooling. The top layer consisted of porous hBN@PVDF-HFP film (thickness ∼ 100 μm) to realize daytime radiative cooling while the bottom layer was the directional graphene film (thickness ∼ 30 μm) to promote in-plane thermal conductive performance, high solar reflectance <span><math><mrow><msub><mover><mi>R</mi><mo>‾</mo></mover><mtext>solar</mtext></msub></mrow></math></span> = 0.944, thermal emittance <span><math><mrow><msub><mover><mi>ε</mi><mo>‾</mo></mover><mtext>LWIR</mtext></msub></mrow></math></span> = 0.904, and in-plane thermal diffusivity 185.7 mm² s⁻¹ were obtained. Under sunlight, the designed radiative cooling film can greatly reduce the local working temperature from 130.6 °C to 63.3 °C compared with the reference radiative cooling film at the same local heating power, which also shows great local heat dissipation performance under a non-flat surface. This work provides a potential approach to developing thermal conductive radiative cooling technologies for outdoor local heat dissipation applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101626"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142816014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic imprint crystallization: Externally-templated crystallization of amorphous silicon","authors":"Koichi Tanaka ,&nbsp;Connor P. Horn ,&nbsp;Jianguo Wen ,&nbsp;Rachel E. Koritala ,&nbsp;Supratik Guha","doi":"10.1016/j.mtphys.2024.101599","DOIUrl":"10.1016/j.mtphys.2024.101599","url":null,"abstract":"<div><div>In this paper, we demonstrate the crystallization of an amorphous Si layer via atomic imprint crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy (SPE) from an externally impressed single-crystal Si template that is then peeled off via delamination following crystallization. Microstructural analysis using electron backscattered diffraction (EBSD) and transmission electron microscopy (TEM) studies of the delaminated (crystallized) films reveals that the top surface of the amorphous Si layer is crystallized by SPE with regions (up to ∼5 mm diameter) composed of epitaxial domains (lateral size of few μm), all of which bear the same crystalline orientation as that of the template crystal. Unlike conventional SPE, the crystallization is not uniform across the entire region: the grains contain crystal defects such as dislocations, stacking faults, and twins; and while the crystallization is initiated at the top surface of the film, the thickness of the single-crystalline area is limited to ∼40 nm from the top surface. Clearly, the AIC approach leads to SPE (aligned with the template's crystalline orientation) over areas as large as few mms, but the crystallization is defective and incomplete through the film. We attribute this to be a consequence of the tensile stress field created at the amorphous/crystalline frontline by the volume change of amorphous Si during the crystallization. Our results establish the feasibility of imprint crystallization, and points to the direction of a new process that may enable the creation of single crystal pockets in integrated device stacks in a scalable fashion without the need for an underlying single crystal substrate. However, our results also indicate that the crystallization is of a poor quality and indicates the need for further optimization of the crystallization method.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101599"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142678994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Migration and evolution of iodine in perovskite solar cells","authors":"Xiaoting Ma ,&nbsp;Ronghua Luo ,&nbsp;Xiongjie Li ,&nbsp;Haixuan Yu ,&nbsp;Junyi Huang ,&nbsp;Wanpeng Yang ,&nbsp;Haodan Shi ,&nbsp;Yan Shen ,&nbsp;Mingkui Wang","doi":"10.1016/j.mtphys.2024.101616","DOIUrl":"10.1016/j.mtphys.2024.101616","url":null,"abstract":"<div><div>Perovskite solar cells (PSCs) have rapidly gained prominence in photovoltaics, achieving impressive advancements in power conversion efficiency (PCE), increasing from 3.8 % to over 26 % in just a decade. We have seen many ideas and additives one after another on the way to improving device efficiency. A feature of perovskite solar cells is that once a certified power conversion efficiency has been reported, it appears that most plausible additives can accomplish the same job in increasing device performance. A familiar story with graphene. There is an old saying in China about a black bear in a corn forest that will never get the super corn it wanted. We must focus on the critical issues of the PSCs and find a suitable solution for them. Otherwise, strategies or methods of temporary relief, regardless of the consequences, would not provide a boost to the development of this emerging technology. For example, the long-term stability of PSCs remains a major challenge, particularly due to the migration of iodine ions, which can lead to degradation through redox reactions and the formation of corrosive iodine species, such as I₂ and I₃⁻. Chemically reactive iodine species can further damage the perovskite layer and adjacent components, shortening the device longevity. Here, we first examine the origin of iodine ion migration and the development of iodine defects in perovskites. The migration of iodine ions and the formation of their byproducts can trigger self-catalyzed degradation reactions during the operation of PSCs. We summarize strategies to address this issue, including composition regulation, grain boundary passivation, crystallization control, and the use of redox-active additives and interfacial barrier layers. These methods show promising potential for resolving iodine defects and improving the operational durability of PSCs. By developing multifunctional additives or using multiple strategies in combination, the migration and evolution of iodine ions can be controlled more effectively. Finally, we propose the introduction of new approaches from other scientific fields to inhibit ion migration and capture volatile iodine, and discuss their applicability in PSCs to achieve long-term operational stability.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101616"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142788720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-firing BaMg₂V₂O₈-based composites featuring novel ultra-low permittivity and low loss for dual-band 6G antenna applications","authors":"Burhan Ullah ,&nbsp;Yixin Yang ,&nbsp;Millicent Appiah ,&nbsp;Yuting Xiao ,&nbsp;Daniel Q. Tan","doi":"10.1016/j.mtphys.2024.101624","DOIUrl":"10.1016/j.mtphys.2024.101624","url":null,"abstract":"<div><div>The BaMg₂V₂O₈-based ceramic composites provide a high-performance, industrially viable solution, bridging the gap between polymer and ceramic dielectrics. While polymer-dielectrics are favored in flexible electronics for their low permittivity (ε_r) and compatibility with low-temperature processing, they fall short in thermal stability, mechanical strength, and long-term reliability that ceramics excel in. Our newly developed ceramic composites address these limitations by featuring an ultra-low ε_r, which is essential for 6G communication. Significant efforts have been directed towards optimizing the microwave dielectric properties of the composites by manipulating lattice structures and polarization mechanisms. This has led to the successful development of Ba₀.₈₅Sr₀.₁₅Mg₁.₉₈Zn₀.₀₂V₂O₈–<em>x</em>wt.%Li₂CO₃ ceramic composites within the composition range of 0.0 ≤ <em>x</em> ≤ 1.75. This tailored composition results in a solid solution that coexists with both tetragonal (T-phase: ε_r = 13.03, Q × f = 55,356 GHz at f ≥ 9 GHz, τ_f = −5.3 ppm/°C at <em>x</em> = 0.75) and orthorhombic phases (O-phase: ε_r = 3.96, Q × f = 73,775 GHz at f ≥ 17 GHz, τ_f ∼ −6.1 ppm/°C at <em>x</em> = 0.75), achieving an ultra-low ε_r with balanced Q × f values and a temperature coefficient of resonance frequency after sintering at approximately 840 °C/4h. The variation in ε_r and Q × f-values is attributed to the distortion and deformation of Ba-O₈ polyhedra, as well as the full width at half maximum (FWHM) values of the Eg_(Ba) and A_1g Raman modes. The phase coexistence enables tunability of dual-frequency band antennas, providing flexible solutions for advanced communication.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101624"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142804626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"API phonons: Python interfaces for phonon transport modeling","authors":"Xin Qian ,&nbsp;Guanda Quan ,&nbsp;Te-Huan Liu ,&nbsp;Ronggui Yang","doi":"10.1016/j.mtphys.2024.101630","DOIUrl":"10.1016/j.mtphys.2024.101630","url":null,"abstract":"<div><div>API Phonons is a Python software package to predict the transport dynamics of heat-carrying phonons. Using the powerful syntax of Python, this package provides modules and functions interfacing between different packages for atomistic simulations, lattice dynamics, and phonon-phonon interaction calculations including LAMMPS, Quippy, Phonopy, and ShengBTE. API Phonons enabled complex phonon calculations, including (1) extracting harmonic and anharmonic force constants from arbitrary interatomic potentials, which can be used as inputs for solving Boltzmann transport equations; (2) predicting thermal conductivity using Kubo's linear response theory, which captures both quasiparticle transport and inter-band coherent transport; and (3) modeling of ultrafast pump-probe thermal responses using a Green's function approach based on mode-resolved phonon properties for studying ballistic, hydrodynamic, and diffusive transport dynamics. The package provides a flexible, easy-to-use, and extensive platform for modeling phonon transport physics through Python programming.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101630"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142867017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Corrigendum to ‘Mist CVD technology for gallium oxide deposition: A review’ [Mater. Today Phys. 49(2024) 101604]","authors":"Suhao Yao ,&nbsp;Yifan Yao ,&nbsp;Maolin Zhang ,&nbsp;Xueqiang Ji ,&nbsp;Shan Li ,&nbsp;Weihua Tang","doi":"10.1016/j.mtphys.2024.101610","DOIUrl":"10.1016/j.mtphys.2024.101610","url":null,"abstract":"","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101610"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142760309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface borate layer dramatically enhances the stability of NiFe-layered double hydroxide for alkaline seawater oxidation","authors":"Tong Li ,&nbsp;Chaoxin Yang ,&nbsp;Zhengwei Cai ,&nbsp;Zixiao Li ,&nbsp;Shengjun Sun ,&nbsp;Xiaoyan Wang ,&nbsp;Min Zhang ,&nbsp;Meng Yue ,&nbsp;Hefeng Wang ,&nbsp;Xixi Zhang ,&nbsp;Dongdong Zheng ,&nbsp;Yongchao Yao ,&nbsp;Yongsong Luo ,&nbsp;Mohamed S. Hamdy ,&nbsp;Fatma A. Ibrahim ,&nbsp;Xuping Sun ,&nbsp;Bo Tang","doi":"10.1016/j.mtphys.2024.101612","DOIUrl":"10.1016/j.mtphys.2024.101612","url":null,"abstract":"<div><div>Seawater electrolysis presents a sustainable approach for producing green hydrogen using renewable energy sources. However, chloride ions (Cl⁻) and their derivatives significantly reduce the durability of anode catalysts, severely hindering their practical application. In this work, we developed a borate (B_i) modified NiFe layered double hydroxide on nickel foam (NiFe LDH@NiFe-B_i/NF) to blocks Cl⁻ and mitigates chlorine reactions during alkaline seawater oxidation (ASO). In situ electrochemical spectroscopic studies show that the B_i layer effectively promotes NiOOH formation, thereby enhancing oxygen evolution reaction (OER) activity. Specifically, the B₄O₇²⁻-rich anionic overlayer effectively prevents Cl⁻ adsorption and thus protect the active site during ASO. As a result, NiFe LDH@NiFe-B_i/NF requires a lower overpotential (<em>ƞ</em>) of 354 mV to achieve an industrial current density (<em>j</em>) of 1000 mA cm⁻² compared to NiFe LDH/NF, which requires 407 mV, in a 1 M KOH + seawater. Notably, NiFe LDH@NiFe-B_i/NF exhibits exceptional long-term electrochemical durability, maintaining stable operation for 600 h at a <em>j</em> of 1000 mA cm⁻² in alkaline seawater. Additionally, membrane electrode assembly fabricated with NiFe LDH@NiFe-B_i/NF requires lower <em>ƞ</em> to reach the same voltages than Pt/C/NF||RuO₂/NF. Furthermore, Pt/C/NF||NiFe LDH@NiFe-B_i/NF operates at 300 mA cm⁻² for 150 h without significant activity degradation.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101612"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142782431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research progress of two-dimensional materials in the field of electromagnetic shielding","authors":"Yichen Yang ,&nbsp;Zhe Liu ,&nbsp;Yajing Wang ,&nbsp;Zhihui Zhang ,&nbsp;Xiuchen Wang","doi":"10.1016/j.mtphys.2024.101617","DOIUrl":"10.1016/j.mtphys.2024.101617","url":null,"abstract":"<div><div>With the growing issue of electromagnetic pollution in modern society, the development of novel and efficient electromagnetic shielding materials has become crucial. This paper examines two-dimensional materials, specifically graphene, two-dimensional transition metal carbonitride (MXenes), and Transition metal dichalcogenides (TMDs). This paper explores the potential applications of two-dimensional materials in electromagnetic shielding, providing a comprehensive overview of their unique properties and synthesis methods. It thoroughly examines strategies for optimizing the performance of composite materials and identifies the limitations of existing technologies. Based on these findings, the paper reflects future trends in electromagnetic shielding technologies for two-dimensional materials, with a focus on advancing the development of thinner, lighter, more efficient, and environmentally sustainable shielding solutions.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101617"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142788715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface engineering for minimizing trapped charge density in β-Ga₂O₃ Schottky barrier diodes for high-performance power devices","authors":"Shivani ,&nbsp;Atul G. Chakkar ,&nbsp;Pradeep Kumar ,&nbsp;Mukesh Kumar","doi":"10.1016/j.mtphys.2024.101605","DOIUrl":"10.1016/j.mtphys.2024.101605","url":null,"abstract":"<div><div>Gallium oxide (Ga₂O₃), with its ultra-wide bandgap and high breakdown voltage, has emerged as a leading candidate for next-generation power devices. The performance and the Baliga figure-of-merit for power devices critically depend on breakdown voltage sustained by Schottky contact of metal with ultra-wide gap materials. However, high-quality Schottky contacts with Ga₂O₃ presents a significant challenge due to the presence of surface defects and formation of metal induced mid-gap defects states in Ga₂O₃. In this study, we investigate the electrical properties and defects at the interface between Ni metal and <em>β</em>-Ga₂O₃ thin films. Additionally, a 20 nm MgO thin films with various oxygen contents were deposited on β-Ga₂O₃ using radio-frequency magnetron sputtering and Ni/MgO/<em>β</em>-Ga₂O₃ metal-insulator-semiconductor Schottky diodes were fabricated. The frequency dependent C-V characteristic and surface-sensitive XPS depth profile is employed to study the interface of Ni/Ga₂O₃ and Ni/MgO/Ga₂O₃ Schottky barrier diodes. Our results show that the Ni/MgO/Ga₂O₃ Schottky barrier diode with 66 % O₂ in the MgO thin film during synthesis attains a barrier height of 0.87 eV. Subsequent post-metallization annealing at 300 °C in an Ar ambient for 30 min enhances the barrier height up to 1.1 eV. Also, a reduced on-resistance of 11.65 mΩ cm² and a lower on-voltage of 0.3V was obtained after annealing in Ar. The frequency dependent <em>C-V</em> characteristic results show no dispersion in capacitance for the annealed sample which signify the passivation of interface defects density (Δ_ιτ) and oxide charges density (N_f) in the dielectric layer (MgO). The minimum value of D_it and N_f achieved for the sample having highest barrier height (1.1eV) are 5.41 × 10¹¹/eV/cm² and 2.91 × 10¹⁰/cm³, respectively. This study establishes a vigorous foundation for the expanded utilization of Ga₂O₃ in power electronics devices, emphasizing the vital role of interface engineering.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101605"},"PeriodicalIF":10.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142735514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}