Materials Today Physics最新文献

{"title":"Effectively Tuning Phonon Transport across Al/nonmetal Interfaces through Controlling Interfacial Bonding Strength without Modifying Thermal Conductivity","authors":"Weidong Zheng, Zhuo Miao, Xue Zhou, Guojun Li, Hui Wu, Jingxuan Wei, Hongkun Li","doi":"10.1016/j.mtphys.2025.101676","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101676","url":null,"abstract":"Tuning phonon transport across interfaces is crucial for optimizing thermal management of various microelectronics, where efficient heat dissipation and effective thermal insulation are essential for different devices. Previous strategies are either limited by the operating conditions or necessitate compromising the thermal dissipation performance of underlying substrates. Here, we propose an effective method to tune phonon transport across non-ideal realistic Al/nonmetal interfaces by modulating interfacial bonding strength, without altering the thermal conductivity of underlying substrates. We achieve up to a 3-fold increase in interfacial thermal conductance (<em>G</em>) through variations in deposition methods and surface pretreatments. Our non-destructive picosecond acoustic measurements reveal a strong correlation between <em>G</em> and acoustic transmission coefficient, confirming that the observed enhancement in <em>G</em> is primarily due to the larger interfacial bonding strength, facilitated by the contamination removal and covalent bond formation during sputtering deposition. Our measured temperature dependence of <em>G</em> suggests that the differing interfacial bonding strength mainly affects the transmission of low-frequency phonons. Moreover, we observe that the effective phonon transmission probability of non-ideal realistic Al/nonmetal interfaces exhibits remarkable substrate independence, revealing that, unlike commonly emphasized in previous studies, the similarity in phonon density of states (DOS) is not a necessary requirement for enhancing the phonon transport across these interfaces. Instead, interfacial bonding strength plays a more dominant role in governing <em>G</em> of non-ideal realistic interfaces. We also demonstrate the long-term stability of the enhanced <em>G</em> after extended storage and confirm the effectiveness of our methods over a temperature range of 80 – 500 K. Our findings advance fundamental understanding of phonon transport across non-ideal realistic interfaces and should be useful in ongoing efforts for thermal management in microelectronics.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"24 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143435690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene Nb2C/MoS2 heterostructure: Nonlinear optical properties and a new broadband saturable absorber for ultrafast photonics","authors":"Qing Wu ,&nbsp;LiuXing Peng ,&nbsp;JinLai Zhao ,&nbsp;Kun Sun ,&nbsp;Si Chen ,&nbsp;WeiChun Huang","doi":"10.1016/j.mtphys.2025.101678","DOIUrl":"10.1016/j.mtphys.2025.101678","url":null,"abstract":"<div><div>We for the first time demonstrate an all-fiber, ytterbium/erbium/thulium-doped, mode-locked laser system using a MXene/transition metal dichalcogenides (TMDs)-based heterostructure (Nb₂C/MoS₂) as a broadband saturable absorber (SA) to the best of our knowledge. The broadband saturable absorber, fabricated by optical deposited method, integrated MXene Nb₂C/MoS₂ and tapered fiber, exhibits strong nonlinear optical response at wavelengths of 1.0 μm, 1.5 μm and 2 μm. 12.4 ps/96.5 fs/551 fs stable pulses at 1050.00 nm/1597.50 nm/1901.97 nm are achieved, as the shortest pulse durations, respectively, based on the Nb₂C/MoS₂ in ytterbium/erbium/thulium-doped fiber laser to date. Through intracavity dispersion management, the MXene Nb₂C/MoS₂ based erbium-doped cavity can generate a 96.5 fs pulse with a spectral width of 43.36 nm, and both of pulse time and spectral width are the shortest and widest values in an all-fiber laser to date, respectively. Our results validate the broadband operating characteristics of MXene Nb₂C/MoS₂ devices in all-fiber lasers from 1 to 2 μm. The outstanding nonlinear optical properties of MXene Nb₂C/MoS₂ provide extensive prospects for its application in fields such as electronic devices and optoelectronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101678"},"PeriodicalIF":10.0,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143427408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature annealing induces superior shock-resistant performance in FeCoCrNiCu high-entropy alloy","authors":"Guoxiang Shen, Hongcai Xie, Zhengchen Han, Junming Xiong, Chaofan Li, Hongwei Zhao, Luquan Ren, Zhichao Ma","doi":"10.1016/j.mtphys.2025.101679","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101679","url":null,"abstract":"By virtue of ultrahigh hardness, excellent wear resistance, and superior thermal stability, FeCoCrNiCu high-entropy alloys (HEAs) have promise for a wide range of structural applications. However, the focus of existing studies has been on quasi-static or static conditions, while a fundamental understanding is still limited to the mechanical response and deformation behavior under dynamic loading. Here, the dynamic compression test was carried out to explore the dynamic response mechanism of the FeCoCrNiCu HEA in terms of annealing temperature. Low-temperature annealing was confirmed to significantly improve the dynamic strength. In particular, the yield strength and final flow stress of the annealed HEAs at 300 °C were demonstrated to be as high as 1178.2 MPa and 1797.9 MPa, which was 113.6% and 54.5% higher than that of the as-cast counterparts, respectively. Our results revealed that this substantial increase in strength came from a combination of mechanisms, involving dislocation, twinning and fine grain strengthening. In addition, the energy absorption per unit volume of HEAs annealed at 300 ° C at maximum strain was measured to be as high as 308.05 MJ/m³ (only 262.55 MJ/m³ for the as-cast counterpart), indicating excellent energy absorption capability. Our investigation reveals the dynamic deformation behaviors and mechanisms of FeCoCrNiCu HEAs, providing valuable guidance for designing and developing HEAs with excellent mechanical properties under dynamic loading.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"4 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143435525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vacancy regulation to achieve N-type high thermoelectric performance PbSe through titanium-incorporation","authors":"Xiaoyan Niu ,&nbsp;Zhiliang Li ,&nbsp;Zhen Fan ,&nbsp;Xiaowei Wu ,&nbsp;Qi Zhao ,&nbsp;Shufang Wang ,&nbsp;Hangtian Zhu ,&nbsp;Guodong Li ,&nbsp;Huaizhou Zhao","doi":"10.1016/j.mtphys.2025.101675","DOIUrl":"10.1016/j.mtphys.2025.101675","url":null,"abstract":"<div><div>Most high-performance thermoelectric materials, such as Bi₂Te₃, PbTe, and SnTe, rely on the costly and scarce element like tellurium, limiting their practical use. Recently PbSe has emerged as a promising candidate, showing high peak figure of merit (<em>ZT</em>) values at 900 K. However, PbSe is intrinsically p-type due to the lower formation energy of Pb vacancies, undermining the development of its n-type variants. This study reveals that incorporating titanium into PbSe can reverse the material to n-type and further enhance its thermoelectric performance. The electron localization function diagram and band structure calculations corroborate the P to N type transitions in Pb_0.996Se-y%Ti samples. Using a straightforward synthesis method, we examined various stoichiometric ratios of Pb_0.996Se-<em>y</em>%Ti (<em>y</em> = 1, 3, 5, 7, 10). Results show that n-type characteristics appear with titanium content above 3 %, linked to the formation of a secondary phase, TiSe. The highest <em>ZT</em> of 0.64 is achieved for Pb_0.996Se-5%Ti at 573 K, with an average <em>ZT</em> of 0.47 from 300 K to 500 K, and high power factor of 28.6 μW K⁻² cm⁻¹ is reached at 300 K, indicating the potential of Ti-incorporated PbSe for energy conversion applications at near room temperatures.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101675"},"PeriodicalIF":10.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143417280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Crystalline FeOCl as a novel saturable absorber for broadband ultrafast photonic applications","authors":"Qingxi Zhao,&nbsp;Hongwei Chu,&nbsp;Zhongben Pan,&nbsp;Han Pan,&nbsp;Shengzhi Zhao,&nbsp;Dechun Li","doi":"10.1016/j.mtphys.2025.101674","DOIUrl":"10.1016/j.mtphys.2025.101674","url":null,"abstract":"<div><div>Due to their tunable nonlinear coefficients, minimal energy loss, and high carrier densities, two-dimensional van der Waals materials have found extensive use as saturable absorbers for generating ultra-short pulses. The layered FeOCl material, a typical van der Waals material, demonstrates controllable optical properties through physical or chemical methods. However, its nonlinear optical characteristics have received limited attention. To explore the nonlinear optical properties of FeOCl in the near-infrared region, we synthesized crystalline FeOCl via a partial pyrolysis method and evaluated its broadband nonlinear absorption at 1.5-μm and 1-μm bands using an in-line balanced twin detector system. The results showed a modulation depth of 2.67 % and a saturation intensity of 4.62 MW cm⁻² at the 1.5-μm band, while at the 1-μm band, the modulation depth was 2.81 % and the saturation intensity was 4.04 MW cm⁻². Furthermore, FeOCl saturable absorbers were connected to Er-doped and Yb-doped fiber lasers, resulting in distinct mode-locking behaviors. Conventional soliton mode-locking was achieved in the Er-doped fiber laser, yielding a central wavelength of 1564.8 nm and a pulse duration of 1.11 ps. Noise-like pulse mode-locking was observed in the Yb-doped fiber laser with a central wavelength of 1034.1 nm and a pulse duration of 572 fs. These findings highlight the superior nonlinear optical properties of crystalline FeOCl material and its significant potential for near-infrared applications, paving the way for its future use in advanced ultrafast photonics.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101674"},"PeriodicalIF":10.0,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143401273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Defect-mediated resistive switching in thin multilayer hexagonal boron nitride: A first principles study of charge state modulation","authors":"Maryam Keshavarz Afshar ,&nbsp;Ebrahim Nadimi","doi":"10.1016/j.mtphys.2025.101673","DOIUrl":"10.1016/j.mtphys.2025.101673","url":null,"abstract":"<div><div>Among the two-dimensional materials, hexagonal boron nitride (h-BN) has recently attracted much attention for resistive switching applications. The majority of the prior works focused on the switching mechanisms, which involve the diffusion of metal ions from the electrode into the boron vacancies (V_B). Nonetheless, in such multi-layer systems, removing these metal ions during the RESET process is difficult and results in device failure. In this work, we explored resistive switching in h-BN, focusing on V_B and Stone-Wales (SW) defects. SW defects act as simplified model for atomic rearrangements at grain boundaries. Our study investigate how these defects behave across different charge states, shedding light on their role in resistive switching mechanisms. The results of our Density Functional Theory (DFT) calculations showed the feasibility of SET and RESET operations in thin h-BN layers without the presence of metal atoms. We employed Nudged Elastic Band (NEB) calculations to show that SW defects greatly reduce the energy barrier for boron diffusion between h-BN layers and facilitates the formation of conductive bridges. These bridges, which are essential for SET and RESET processes, form and break dynamically in response to changes in charge states, particularly under the influence of negative charges. The stability of these conductive bridges was evaluated using ab initio Molecular Dynamic (AIMD) simulations. Moreover, electronic transport calculations performed using non-equilibrium Green's function (NEGF) revealed an I_on/I_off ratio of 10³. Our findings show that the combination of V_B and SW defects is sufficient to enable resistive switching, making thin multilayer h-BN a promising candidate for threshold switching memristors.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101673"},"PeriodicalIF":10.0,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143401287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The mechanical behavior of 2D metal borides - MBenes: A detailed review","authors":"Andrii Babenko ,&nbsp;Ehsan Ghasali ,&nbsp;Li Jie ,&nbsp;Yasin Orooji","doi":"10.1016/j.mtphys.2025.101671","DOIUrl":"10.1016/j.mtphys.2025.101671","url":null,"abstract":"<div><div>In the review the information concerning mechanical properties of two-dimensional (2D) metal borides (MBenes) was collected, systematized and analyzed for the first time. The calculation method and reported values of elastic constants, Young modulus and Poisson's ratio of more than 100 unique chemical compositions of computationally studied and experimentally synthesized MBenes were analyzed and discussed. The influence of surface functionalization on the mechanical properties of MBenes was analyzed based on collected data. An analysis of the method for measuring mechanical properties of 2D materials was conducted and the obtained values of mechanical parameters for experimentally investigated 2D materials were compared and discussed.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101671"},"PeriodicalIF":10.0,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Approaching to low thermal conductivity limit in layered materials through full-spectrum phonon band engineering","authors":"Song Hu ,&nbsp;Xiaokun Gu","doi":"10.1016/j.mtphys.2025.101669","DOIUrl":"10.1016/j.mtphys.2025.101669","url":null,"abstract":"<div><div>Exploring the lower bound of thermal conductivity in fully dense solids holds significant fundamental and practical importance. Rotation stacked layered materials have been proven as a unique platform to achieve low thermal conductivity, but the reported performance should be partially attributed to the size effects of the ultrathin film. Here, we theoretically demonstrate the possibility of using full-spectrum phonon band engineering to achieve a through-plane thermal conductivity as low as 0.046 W m⁻¹ K⁻¹ in a sufficiently large rotation stacked MoS₂/WSe₂ structure, which is three orders of magnitude smaller than its bulk counterpart, MoS₂, and is among the lowest thermal conductivity values ever reported. We trace this behavior in the hetereostructure to the suppression of longitudinal acoustic phonon branch due to heavier atomic mass, and to the mass alternating induced increase of frequency intervals that effectively inhibits the energy hopping of localized high-frequency modes. We highlight the importance of suppression of the thermal conductivity from high-frequency vibrational modes, which usually lies outside of the conventional strategies of designing of low thermal conductivity materials. We also find that the hetereostructure has an extremely high thermal conductivity anisotropy ratio of 1150. This work provides new insight into the nature of thermal transport at a quantitative level and valuable guidelines for searching and designing new ultralow thermal conductivity material of potential interest for effective thermal management.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"52 ","pages":"Article 101669"},"PeriodicalIF":10.0,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143192286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composition-tuned Fermi level and anomalous Hall effect in epitaxial grown Mn(Bi1-xSbx)2Te4 thin films","authors":"Jiangfan Luo ,&nbsp;Xiaoqing Bao ,&nbsp;Yanbin Zhou ,&nbsp;Qiwei Tong ,&nbsp;Zhuo Chen ,&nbsp;Liangyu Zhu ,&nbsp;Sen Xie ,&nbsp;Yujie Ouyang ,&nbsp;Hao Sang ,&nbsp;Fan Yan ,&nbsp;Yong Liu ,&nbsp;Qingjie Zhang ,&nbsp;Aiji Wang ,&nbsp;Jinxing Zhang ,&nbsp;Wei Liu ,&nbsp;Xinfeng Tang","doi":"10.1016/j.mtphys.2025.101646","DOIUrl":"10.1016/j.mtphys.2025.101646","url":null,"abstract":"<div><div>MnBi₂Te₄-based intrinsic magnetic topological insulators have attracted keen interest for many exotic quantum states, such as quantum anomalous Hall (QAH) insulator state and axion insulator state. Such intriguing quantum states have been extensively studied in the atomically thin flakes exfoliated from single crystals. Due to the advantages of thin film processes that facilitate large-scale fabrication and the control of film thickness, MnBi₂Te₄-based thin films could be indispensable for further pursuit of the QAH effect and for exploring other intriguing quantum states, but they urgently need further exploration. Here, we fabricate high-quality Mn(Bi_1-xSb_x)₂Te₄ (0 ≤ x ≤ 1) thin films by molecular beam epitaxy, and investigate the effect of Sb content on Fermi level, band topology and intrinsic magnetism. The angle-resolved photoemission spectroscopy and electrical transport measurements demonstrate a continuous transition from n-type to p-type can be realized by increasing Sb contents, while the Fermi level is close to the charge neutral point at x = 0.25. Mn(Bi_1-xSb_x)₂Te₄ films exhibit AH sign reversal and a transition of magnetic exchange interaction across x = 0.5, as a consequence of the topological phase transition induced by lifting Sb content. Furthermore, the promising MnBi_1.5Sb_0.5Te₄ film acquires the most remarkable AH signal among all films and presents robust spontaneous surface magnetization. Our results pave the way for exploring the QAH effect on the potential platform of MnBi_1.5Sb_0.5Te₄ films.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"51 ","pages":"Article 101646"},"PeriodicalIF":10.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142917629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Suppressing reflectance in Reststrahlen bands of Cu0.64Cr1.51Mn(0.85-x)CoxO4 to achieving broadband high emissivity via phonon vibration modes coupling","authors":"Boyu Liu,&nbsp;Zhongyang Wang,&nbsp;Yan Zheng,&nbsp;Lianduan Zeng,&nbsp;Junjia Liu,&nbsp;Tongxiang Fan,&nbsp;Xiao Zhou","doi":"10.1016/j.mtphys.2025.101649","DOIUrl":"10.1016/j.mtphys.2025.101649","url":null,"abstract":"<div><div>Broadband high-emissivity materials are extremely attractive in radiative cooling of heat components, energy conservation of industrial furnaces, thermophotovoltaics, and optical camera extinction. In particular, spinel ceramics are intriguing high-emissivity materials due to their excellent infrared radiation properties, high-temperature resistance and oxidation resistance. However, high reflectance in the Reststrahlen band of spinel ceramics still hinders the realization of broadband high infrared emissivity. How to actively tune optical response in Reststrahlen band remains elusive. In this work, we synthesized Cu_0.64Cr_1.51Mn_{(0.85-<em>x</em>)}Co_<em>x</em>O₄ spinel via solid-state reaction and successfully suppressed reflectance in Reststrahlen bands by phonon vibration modes coupling. Broadband high emissivity being greater than 0.917 across 0.25–25 μm spectral range is achieved in Cu_0.64Cr_1.51Mn_0.45Co_0.4O₄ spinel. This study provides a theoretical guidance for regulating the optical response in Reststrahlen band and achieving broadband high emissivity materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"51 ","pages":"Article 101649"},"PeriodicalIF":10.0,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142937012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}