Materials Today Physics最新文献

{"title":"Unexpected Room-Temperature Anomalous Hall Effect and Spin Hall Magnetoresistance in Cr0.08Co0.92Cl2/Pt Heterostructures","authors":"Sichao Dai, Wei-Bin Wu, Wei Tang, Duo Zhao, Xiaokeng Wu, Zelong Li, Chenxu Kang, Xiaoliang Weng, Muhammad Younis, Anwar Ali, Zhimin Mao, Su-Yun Zhang, Hui Fang, Lu Qi, Jun-Yi Ge, Yu-Jia Zeng","doi":"10.1016/j.mtphys.2025.101716","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101716","url":null,"abstract":"Recent discovery of peelable van der Waals (vdW) magnets has opened new avenues for the advancement of atomic-level spintronic devices; however, their magnetic transition temperatures are typically well below room temperature. In spite of considerable explorations, including defect engineering, strain engineering, elemental doping, and the magnetic proximity effect (MPE), controllable fabrication of room-temperature vdW spintronic devices remains a great challenge. Herein, we report the growth of layered vdW Cr_0.08Co_0.92Cl₂ crystals, which exhibit antiferromagnetic ordering at approximately 23.4 K. Particularly, unexpected anomalous Hall effect (AHE) and spin Hall magnetoresistance (SMR) are observed in the 2D Cr_0.08Co_0.92Cl₂/Pt heterostructure at a much higher temperature of 300 K. These distinctive room-temperature magnetic signals are attributed to the MPE at the Cr_0.08Co_0.92Cl₂/Pt interface, which also result in a large spin Hall angle of 0.139. This study not only expands the transition metal dihalide family as 2D magnets, but also demonstrates room-temperature spintronic devices utilizing vdW magnets with otherwise low transition temperatures, paving a pathway for spintronic applications of 2D magnets.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"1 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143766730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen Vacancy-Driven Interfacial Alloying and Mixing for Enhanced Heat Transfer in Gallium Oxide","authors":"Bowen Wang, Baowen Wang, Hejin Yan, Yongqing Cai","doi":"10.1016/j.mtphys.2025.101714","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101714","url":null,"abstract":"β-Gallium oxide (β-Ga₂O₃) is a superior material for power electronic applications due to ultra-wide bandgap and high critical field strength. The bottlenecking issue for its application lies in promoting heat dissipation and robust interfacial contact. Opposite to the common notion that a clean interface leads to high thermal conductivity, here we demonstrate an opposite strategy with alloying the interface for a significantly promoted heat conduction. Through sophisticated machine learning-powered molecular dynamics simulations coupled with comprehensive density functional theory analyses, we demonstrate that oxygen vacancies (V_O) serve as key facilitators of phonon coupling between β-Ga₂O₃ and Au layers. The phonon density of states and spectral heat current analyses unveil a remarkable mechanism: V_O catalyzes interfacial mixing due to inverted interfacial built-in electric field, generating an alloy-like transition region that effectively bridges the phonon mismatch and enables more efficient phonon transmission. Intermediate scattering function analysis reveals that while V_O maintains long-range structural integrity (at <strong><em>q</em></strong> = 0.51 Å^-1), it significantly modifies local atomic dynamics at shorter length scales. Our findings open new avenues for developing advanced heat dissipation strategies, offering crucial insights into the development of next-generation high-performance electronic systems.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"11 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental studies of copper porous microfin composite structures for immersion phase-change liquid cooling","authors":"Rui Wang ,&nbsp;Yuan Tian ,&nbsp;Botao Shen ,&nbsp;Xuefeng Gao","doi":"10.1016/j.mtphys.2025.101717","DOIUrl":"10.1016/j.mtphys.2025.101717","url":null,"abstract":"<div><div>Currently, the rapid development of digital economy and artificial intelligence urgently needs a dramatic increase in computing power, posing a huge challenge to develop advanced microporous copper materials for chip cooling. However, the maximal heat flux (<em>q</em>_max) of copper micro/nanostructures reported by all peers for immersion phase-change liquid cooling (IPCLC) is only 59 W cm⁻² with the surface temperature (<em>T</em>_S) of simulated chip heat source reaching the upper limit of 85 °C. Here, we report a novel copper porous microfin (CPMF) composite structure with IPCLC performance outperforming those of all peers’ reported micro/nanostructures. Through the rational design of geometrical parameters, its <em>q</em>_max can reach 76 W cm⁻² with <em>T</em>_S being 69 °C, much lower than the allowable upper limit of chip case temperature. Such remarkable IPCLC performance originates from the skillful trade-off among rich nucleation sites, low interface thermal resistance, strong capillary liquid supply and innate vapor-liquid separation of the optimal CPMF composite structure heat sink featured with small microspheres, dense and short porous microfins, and properly-thick porous underlayer. This work not only helps deepen understanding into how hierarchical microporous structures rationally design to enable efficient IPCLC but also provides an advanced IPCLC solution with practical prospect.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101717"},"PeriodicalIF":10.0,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Critical Role of Materials and Device Geometry on Performance of RRAM and Memristor: Review","authors":"Mohammad Tauquir A.S. Shaikh, Chowdam Venkata Prasad, Kyong Jae Kim, You Seung Rim","doi":"10.1016/j.mtphys.2025.101715","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101715","url":null,"abstract":"In the rapidly evolving field of memory technology, material strategies have been continuously optimized to achieve high-performance memory devices, many of which have successfully transitioned to industrial applications. A critical focus has been placed on selecting and refining materials that are environmentally sustainable and amenable to facile processing methods. While resistive random-access memory (RRAM) materials, mechanisms, and applications have been comprehensively reviewed, studies focusing on strategic approaches to material optimization remain limited. This review delves into the burgeoning domain of polymer/organic memory and memristors, with particular attention to electrode and switching layer (SL) material modifications. Key strategies include blending polymers, incorporating nanoparticles, quantum dots, or nanosheets into the SL, and fabricating bilayer or multilayer SLs within the metal-insulator-metal (MIM) structure. These materials and their configurations play pivotal roles in enabling various memory types (WORM, NVM, VM) and achieving low-voltage operation, critical for reducing energy consumption and improving device longevity. By interlinking phenomena and presenting unique features from literature, this review offers readers insights into innovative approaches to materials selection, device geometry, and modulation of biasing stimuli. It serves as a comprehensive guide towards understanding of materials strategies in organic RRAM devices for next-generation memory and memristor technologies.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"113 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143758017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tunable hetero-assembly of 2D NiFeCr-LDH and MnO2 nanosheets for high-energy quasi-solid-state ammonium-ion asymmetric supercapacitors","authors":"Navnath S. Padalkar ,&nbsp;Jayshri A. Shingade ,&nbsp;Jong Pil Park","doi":"10.1016/j.mtphys.2025.101711","DOIUrl":"10.1016/j.mtphys.2025.101711","url":null,"abstract":"<div><div>The development of high-performance quasi-solid-state ammonium-ion asymmetric supercapacitors (QSSAIAS) has recently attracted significant research interest. Nonmetallic ammonium ions, characterized by their high safety, low mass, and small hydrated radius, provide critical advantages for enhancing the performance of ammonium-ion supercapacitors. However, achieving high energy density QSSAIAS remains challenging because of the limited availability of high-capacitance pseudocapacitive cathodes. In this study, we report a high-performance 2D-2D self-assembled layered NiFeCr-LDH-MnO₂ (NFCMn) nanohybrid with pseudocapacitive properties synthesized through an exfoliation-restacking route. The NFCMn nanohybrid achieves a maximum specific capacity of 912 C g⁻¹, a result attributed to its abundant active sites, mesoporous structure, large interlayer gallery, and pronounced synergistic effect of its multi-component layered structure. A full-cell QSSAIAS, assembled using NFCMn nanohybrids as the cathode and activated carbon as the anode, delivers an energy density of 78 Wh kg⁻¹ along with excellent cyclic durability over 15,000 charge–discharge cycles. These findings demonstrate that the self-assembled 2D-2D NFCMn nanohybrid is not only highly effective in enhancing the ammonium-ion supercapacitor performance but also represents a significant step toward developing novel LDH-metal oxide-based hybrid materials with intimate coupling and superior functional properties.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101711"},"PeriodicalIF":10.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143677744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Searching for topological carbon allotropes and the possible nontrivial quasi-particle states in them","authors":"Qing-Bo Liu ,&nbsp;Lun Xiong ,&nbsp;Ziyang Yu ,&nbsp;Hua-Hua Fu","doi":"10.1016/j.mtphys.2025.101700","DOIUrl":"10.1016/j.mtphys.2025.101700","url":null,"abstract":"<div><div>Carbon, as one of the most abundant elements on earth, possesses numerous allotropes that display a diverse range of physical properties. In this study, we utilized ab initio calculations and symmetry analyses to investigate 703 carbon allotropes, leading to the discovery of 315 (32) topological phononic (electronic) materials with ideal nontrivial characteristics. The topological phonons encompass single, charge-two, three, and four Weyl phonons, as well as Dirac (Weyl) node-lines phonons. Topological electronic states include topological insulators, Dirac points (Type-II), triple nodal points, and more. To verify this significant discovery, we adopt several real carbon allotropes with <span><math><mrow><mi>u</mi><mi>n</mi><mi>i</mi></mrow></math></span> (<span><math><mrow><mi>p</mi><mi>b</mi><mi>g</mi></mrow></math></span>) structure within space group (SG) No 178 (230) to showcase their topological characteristics. The <span><math><mrow><mi>u</mi><mi>n</mi><mi>i</mi></mrow></math></span> structure exhibits a combination of single-pair Weyl phonons and one-nodal surface phonons, resulting in a single surface arc in the (100) surface Brillouin zone (BZ) and isolated double-helix surface states in the (110) surface BZ. In the topological semimetal <span><math><mrow><mi>p</mi><mi>b</mi><mi>g</mi></mrow></math></span>, perfect triple degenerate nodal points near the Fermi level are found, resulting in distinct surface states in the (001) and (110) surfaces BZ. This research not only significantly broadens our understanding of topological quasi-particle states in carbon allotropes, but also offer a valuable material platform for further exploration of topological electrons and phonons in light element materials.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101700"},"PeriodicalIF":10.0,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143677840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses","authors":"Fu-Chiao Wu ,&nbsp;Zi-Ming Su ,&nbsp;Yu-Chieh Hsu ,&nbsp;Wei-Yang Chou ,&nbsp;Wei-Chih Lai ,&nbsp;Chin-Chun Tsai ,&nbsp;Horng-Long Cheng","doi":"10.1016/j.mtphys.2025.101708","DOIUrl":"10.1016/j.mtphys.2025.101708","url":null,"abstract":"<div><div>Low-dimensional, lead-free perovskite-based electronic/optoelectronic devices exhibit the advantages of stability and nontoxicity. However, their electrical performance is often lower than that of their three-dimensional, lead-based counterparts. Hence, understanding the correlations between microstructural features and electrical characteristics of low-dimensional, lead-free perovskite-based devices is essential for enhancing device performance. In this study, a two-dimensional Ruddlesden-Popper type perovskite, phenylethylammonium tin iodide (PEA₂SnI₄), was selected as the active material. Various PEAI:SnI₂ blending ratios and molar concentrations were adopted to fabricate PEA₂SnI₄-based memristors. The absorption spectra of PEA₂SnI₄ thin films from diverse process conditions show significant differences, which are rarely discussed in the literature. With the aid of theoretical calculations, we found that the variations in absorption spectra reflect that the PEA₂SnI₄ specimens with low PEAI loading have short crystallite size perpendicular to the substrate and deficiency of organic components in lattice structures, slowing the formation and disruption of silver (Ag) conductive filaments (CFs) of devices. The PEA₂SnI₄ specimens from high molar concentration possess long and short crystallite sizes perpendicular and parallel to the substrate, respectively, leading to efficient formation and disruption of Ag CFs and a large resistive switching window of devices, but weakening the interaction between adjacent PEA₂SnI₄ layers, causing decreased operational stability of devices. Cross-sectional scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy was employed to confirm Ag CF formation. As synaptic devices, these PEA₂SnI₄-based memristors can perform spike-time- and spike-number-dependent plasticity, microstructure-dependent synaptic characteristics, and opposite synaptic behaviors at high and low resistance states. By engineering microstructural features, low-dimensional, lead-free perovskite-based memristors with improved electrical performance or a variety of synaptic behaviors can be achieved.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101708"},"PeriodicalIF":10.0,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional reconfigurable electronic and optoelectronic devices: From modulation to applications","authors":"Qiman Zhang ,&nbsp;Ziheng Zhao ,&nbsp;Li Tao","doi":"10.1016/j.mtphys.2025.101710","DOIUrl":"10.1016/j.mtphys.2025.101710","url":null,"abstract":"<div><div>In the post-Moore era, silicon-based electronic devices have reached their physical limits, impeding significant performance enhancements through further miniaturization of transistor size. Two-dimensional (2D) materials have demonstrated considerable potential for application in electronic devices due to their superior optoelectronic properties, providing new ideas and methods to solve this problem. Herein, a comprehensive review will focus on the unique reconfigurable phenomena presented in 2D electronic and optoelectronic devices including gate-tunable rectifying behaviors, dynamic polarity modulation, and reconfigurable photoresponse, and further discusses the innovative applications of these devices such as reconfigurable optoelectronic logic gates, security circuits, and image processing, aiming to provide guidance for future research in this field and to promote the further innovative development of 2D reconfigurable optoelectronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101710"},"PeriodicalIF":10.0,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anti-drying, anti-freezing and super-elastic MXene/gelatin hydrogels for electromagnetic shielding and pressure sensing","authors":"Xu Zhou ,&nbsp;Xiao-Ai Ye ,&nbsp;Jia-Qi Zhu ,&nbsp;Gui-Gen Wang","doi":"10.1016/j.mtphys.2025.101709","DOIUrl":"10.1016/j.mtphys.2025.101709","url":null,"abstract":"<div><div>Conductive hydrogels with water-enriched pores have shown great potential in electromagnetic wave protection and flexible wearable electronics. However, hydrogel with high water content often results in some challenges such as water loss and low-temperature freezing. In this study, porous gelatin/ChCl/MXene Ti₃C₂T_x (GCM) hydrogels were prepared via a facile one-pot method. The introduction of ChCl forms abundant hydrogen bonds in GCM hydrogels, which endows the hydrogels long-term anti-drying (30 days) and anti-freezing abilities (−30 °C). Due to the synergistic effects of the porous structure, highly conductive MXene and water molecules, the electromagnetic interference (EMI) shielding effectiveness (SE) reach up to 108 dB in the X-band. Significantly, the effect of water molecules on EMI SE is quantified by adjusting the water content in hydrogel. Moreover, the gelatin-based hydrogel exhibits super-elasticity (0.25 MPa at 80 % strain) and demonstrates no significant decrease in EMI SE after 500 compression cycles. Finally, the excellent pressure-sensing properties of GCM hydrogel enable sensitive and reliable detection in human motion and smart coding. Therefore, the developed GCM hydrogel demonstrates promising application prospects in the fields of EMI shielding and sensing for wearable electronic devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101709"},"PeriodicalIF":10.0,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced thermoelectric cooling performance of (Bi, Sb)2Te3 through platinum doping","authors":"Jiayue Du ,&nbsp;Yuxin Sun ,&nbsp;Fengkai Guo,&nbsp;Haoyang Tong,&nbsp;Zhiyuan Yu,&nbsp;Zihang Liu,&nbsp;Jianbo Zhu,&nbsp;Jiehe Sui","doi":"10.1016/j.mtphys.2025.101705","DOIUrl":"10.1016/j.mtphys.2025.101705","url":null,"abstract":"<div><div>The requirements for solid-state cooling are growing, especially under extreme conditions. Bi₂Te₃-based alloys stand as the sole thermoelectric (TE) materials currently available for large-scale commercial use, and it is of great significance to further improve their TE properties. In this study, Pt is doped into p-type Bi_0.4Sb_1.6Te₃ to optimize its TE transport performance. The doping of Pt results in a dramatic rise in carrier concentration and power factor. Simultaneously, the existence of the second phases PtSb along with nanopores, contribute to an obvious reduction in lattice thermal conductivity. Hence, the <em>ZT</em> value is boosted to 1.43 at 348 K, and the average <em>ZT</em> from 300 K to 450 K is as high as 1.32. The 7-pair TE cooling module is fabricated based on this material, which exhibits a maximum cooling temperature difference of 92.2 K, and a maximum cooling capacity of 2.9 W when the hot-side temperature is 350 K. This outstanding progress will facilitate the further development of Bi₂Te₃ cooling modules.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"53 ","pages":"Article 101705"},"PeriodicalIF":10.0,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}