Woo-Seok Lee , Arqum Ali , Jaeho Lee , Jiyoung Kim , Rino Choi , Jeong-Hwan Lee
{"title":"电压驱动门控Van Der Pauw方法在氧化tft中精确提取通道和接触电阻","authors":"Woo-Seok Lee , Arqum Ali , Jaeho Lee , Jiyoung Kim , Rino Choi , Jeong-Hwan Lee","doi":"10.1016/j.mtphys.2025.101880","DOIUrl":null,"url":null,"abstract":"<div><div>Precise characterization of both channel and contact characteristics in p- and n-type oxide thin-film transistors (TFTs) is essential for the development of next-generation low-power complementary metal–oxide–semiconductor circuits. However, p-type oxide TFTs remain limited by inherently low hole concentrations and inefficient charge injections at the contacts, leading to high contact resistance and performance limitation. To address these challenges, a voltage-driven gated van der Pauw (V-gVDP) method is proposed, enabling the simultaneous and accurate extraction of the channel sheet conductance (<span><math><mrow><msub><mi>σ</mi><mi>S</mi></msub></mrow></math></span>) and the specific contact resistivity (<span><math><mrow><msub><mi>ρ</mi><mi>C</mi></msub></mrow></math></span>) compared to the conventional current-driven gVDP or the transmission line method (TLM). Voltage differences in the V-gVDP enable spatial decoupling and independent evaluation of channel and contact characteristics using a single device, without the need for control devices, with superior precision and reproducibility. The relative standard deviation (RSD) of the extracted sheet resistance (<em>R</em><sub><em>S</em></sub>) from the V-gVDP was reduced by factors of 6 and 46 for SnO and IGZO, respectively, while the RSD of <span><math><mrow><msub><mi>ρ</mi><mi>C</mi></msub></mrow></math></span> was improved by factors of 51 and 10 compared to the TLM. The V-gVDP method was successfully applied to both p-type SnO and n-type IGZO TFTs, confirming its robustness and versatility across different carrier polarities. These results demonstrate the potential of the V-gVDP method as a reliable and high-precision platform for characterizing oxide semiconductors and optimizing CMOS circuits and contact engineering.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"58 ","pages":"Article 101880"},"PeriodicalIF":9.7000,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Voltage-driven gated van der Pauw method for accurate channel and contact resistance extraction in oxide Thin-Film Transistors\",\"authors\":\"Woo-Seok Lee , Arqum Ali , Jaeho Lee , Jiyoung Kim , Rino Choi , Jeong-Hwan Lee\",\"doi\":\"10.1016/j.mtphys.2025.101880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Precise characterization of both channel and contact characteristics in p- and n-type oxide thin-film transistors (TFTs) is essential for the development of next-generation low-power complementary metal–oxide–semiconductor circuits. However, p-type oxide TFTs remain limited by inherently low hole concentrations and inefficient charge injections at the contacts, leading to high contact resistance and performance limitation. To address these challenges, a voltage-driven gated van der Pauw (V-gVDP) method is proposed, enabling the simultaneous and accurate extraction of the channel sheet conductance (<span><math><mrow><msub><mi>σ</mi><mi>S</mi></msub></mrow></math></span>) and the specific contact resistivity (<span><math><mrow><msub><mi>ρ</mi><mi>C</mi></msub></mrow></math></span>) compared to the conventional current-driven gVDP or the transmission line method (TLM). Voltage differences in the V-gVDP enable spatial decoupling and independent evaluation of channel and contact characteristics using a single device, without the need for control devices, with superior precision and reproducibility. The relative standard deviation (RSD) of the extracted sheet resistance (<em>R</em><sub><em>S</em></sub>) from the V-gVDP was reduced by factors of 6 and 46 for SnO and IGZO, respectively, while the RSD of <span><math><mrow><msub><mi>ρ</mi><mi>C</mi></msub></mrow></math></span> was improved by factors of 51 and 10 compared to the TLM. The V-gVDP method was successfully applied to both p-type SnO and n-type IGZO TFTs, confirming its robustness and versatility across different carrier polarities. These results demonstrate the potential of the V-gVDP method as a reliable and high-precision platform for characterizing oxide semiconductors and optimizing CMOS circuits and contact engineering.</div></div>\",\"PeriodicalId\":18253,\"journal\":{\"name\":\"Materials Today Physics\",\"volume\":\"58 \",\"pages\":\"Article 101880\"},\"PeriodicalIF\":9.7000,\"publicationDate\":\"2025-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Today Physics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2542529325002366\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2542529325002366","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Voltage-driven gated van der Pauw method for accurate channel and contact resistance extraction in oxide Thin-Film Transistors
Precise characterization of both channel and contact characteristics in p- and n-type oxide thin-film transistors (TFTs) is essential for the development of next-generation low-power complementary metal–oxide–semiconductor circuits. However, p-type oxide TFTs remain limited by inherently low hole concentrations and inefficient charge injections at the contacts, leading to high contact resistance and performance limitation. To address these challenges, a voltage-driven gated van der Pauw (V-gVDP) method is proposed, enabling the simultaneous and accurate extraction of the channel sheet conductance () and the specific contact resistivity () compared to the conventional current-driven gVDP or the transmission line method (TLM). Voltage differences in the V-gVDP enable spatial decoupling and independent evaluation of channel and contact characteristics using a single device, without the need for control devices, with superior precision and reproducibility. The relative standard deviation (RSD) of the extracted sheet resistance (RS) from the V-gVDP was reduced by factors of 6 and 46 for SnO and IGZO, respectively, while the RSD of was improved by factors of 51 and 10 compared to the TLM. The V-gVDP method was successfully applied to both p-type SnO and n-type IGZO TFTs, confirming its robustness and versatility across different carrier polarities. These results demonstrate the potential of the V-gVDP method as a reliable and high-precision platform for characterizing oxide semiconductors and optimizing CMOS circuits and contact engineering.
期刊介绍:
Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.