Materials Today Physics最新文献

{"title":"Lone pair electrons and undersized atoms mediate anomalous thermal conductivity in TlSe-type ABX2 compounds","authors":"Zhengtong Xue ,&nbsp;Yiyang Sun ,&nbsp;Jiawei Zhang","doi":"10.1016/j.mtphys.2025.101832","DOIUrl":"10.1016/j.mtphys.2025.101832","url":null,"abstract":"<div><div>Crystalline materials with intrinsically low lattice thermal conductivity (<em>κ</em>_L) are crucial for thermoelectric and thermal insulating applications. In recent years, TlSe-type ABX₂ compounds have attracted considerable attention owing to their ultralow <em>κ</em>_L, typically attributed to rattling cations with lone pair electrons. However, a systematic understanding of the microscopic mechanisms governing thermal transport trends in these structures remains elusive. Combining first-principles calculations and analysis, we reveal distinct and synergistic roles of lone pair electrons and atomic size effects in suppressing <em>κ</em>_L. Counterintuitively, introducing lone pair electrons (A = Ga, In, Tl) reverses conventional mass-dependent trends, increasing <em>κ</em>_L with average atomic mass due to enhanced anharmonicity related to lone pair activity evidenced by large Grüneisen parameters and reduced phonon lifetimes. Conversely, in systems lacking lone pairs, atomic size effects dominate; undersized atoms (e.g., Na⁺ in NaInTe₂) induce strong anharmonicity, yielding lower <em>κ</em>_L (∼1.33 W m⁻¹ K⁻¹) than heavier analogs (RbInTe₂, ∼1.45 W m⁻¹ K⁻¹). Strikingly, the synergy of lone pair electrons and undersized atoms in GaInTe₂ amplifies phonon scattering, achieving lower <em>κ</em>_L (∼0.58 W m⁻¹ K⁻¹) than that of InTe (∼0.64 W m⁻¹ K⁻¹). This work elucidates the competing mechanisms in ABX₂ systems and establishes a dual design strategy—leveraging lone pair electrons and atomic size mismatch—for engineering materials with intrinsically ultralow thermal conductivity.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"57 ","pages":"Article 101832"},"PeriodicalIF":9.7,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144797429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasma modification induced interface engineering enhanced GaN UV photodetectors with ultrahigh performance and bias-tuned selective response","authors":"Shihao Fu, Danyang Xia, Yuefei Wang, Yurui Han, Chong Gao, Youheng Song, Bingsheng Li, Zhipeng Wei, Aidong Shen","doi":"10.1016/j.mtphys.2025.101831","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101831","url":null,"abstract":"Deficient assembly of interfaces often results in considerable leakage current and compromised device performance, therefore, interface engineering strategy has emerged as a crucial aspect of device fabrication. In this work, the metal/semiconductor (M/S) interface was modified by single-sided plasma etching to fabricate an asymmetric M/S contact GaN-based photodetector (PD). Compared to untreated GaN-based PD, the GaN-based PD with interface engineering exhibits superior performance with an ultrahigh light-dark current ratio of 9.35 × 10⁹ and a high detectivity of 5.64 × 10¹⁷ Jones. Even considering noise effects, the detectivity value remains high at ∼10¹⁶ Jones, which is comparable to photomultiplier tubes. The performance improvement is attributed to the passivation of GaN interface dangling bonds by plasma treatment, while the localized N vacancies induced by etching act as shallow donor energy levels in the GaN energy band structure, reducing the barrier height of the interface and increasing the transport efficiency of charge carriers. In addition, by affecting the depletion layer width of the M/S interface, the device gains a bias-tuned selective response (UVC, UV-C to A, UVA waveband), which can meet various application requirements. Consequently, intentionally introducing local defects via interface engineering is an efficient strategy to optimize device performance while serving as a reference for future device design.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"3 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144802791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new perspective on WO3: Bridging ultrafast terahertz spectroscopy and photoelectrochemical characterization","authors":"Krzysztof Bieńkowski ,&nbsp;Kamil Polok ,&nbsp;Marcin Strawski ,&nbsp;Piotr Wróbel ,&nbsp;Aleksandra Parzuch ,&nbsp;Renata Solarska ,&nbsp;Bożena Gadomska ,&nbsp;Wojciech Gadomski","doi":"10.1016/j.mtphys.2025.101820","DOIUrl":"10.1016/j.mtphys.2025.101820","url":null,"abstract":"<div><div>The efficient conversion of solar energy into chemical fuel remains a critical challenge in renewable energy research. Photoelectrochemical cells (PECs) offer a promising route by directly using sunlight to drive water splitting. However, their widespread implementation is limited by the insufficient efficiency and stability of available semiconductor materials. Rapid discovery and optimization of high performance PEC photoelectrodes require advanced screening methods capable of providing deep insights into charge transport, carrier dynamics and interfacial processes. Herein we propose a novel characterization strategy that integrates optical pump terahertz probe (OPTP) spectroscopy with electrochemical impedance spectroscopy (EIS) to investigate structure–property relationships in WO₃ thin films. By employing silicon substrates to simulate semiconductor depletion layers, we establish a new approach for bridging <em>in situ</em> electrochemical techniques with <em>ex situ</em> time-resolved THz spectroscopy, leading to a more comprehensive understanding of the PEC relevant properties. Our methodology allows the rapid evaluation of charge-carrier dynamics, transport efficiency and interfacial charge transfer processes, providing critical insights into material performance. Using WO₃ as a well established system, we demonstrate that synthesis temperature plays a pivotal role in shaping the morphology, crystallinity and electronic properties of the films. A significant increase in photocurrent and charge-carrier mobility is observed for WO₃ annealed at 700 °C, which is attributed to enhanced crystallization and reduced charge recombination. Additionally, a conductive interfacial layer, identified through independent X-ray photoelectron spectroscopy (XPS) and EIS measurements, further influences charge transport behavior. Moreover, the results highlight the intricate relationship between processing conditions, electronic structure and PEC efficiency, offering new perspectives for designing optimized photoelectrodes. In this study we propose a high throughput, AI compatible framework for PEC material screening, leveraging OPTP spectroscopy as a rapid, non-destructive technique for evaluating carrier dynamics. The proposed methodology may not only accelerate the discovery of next generation PEC materials but also of fundamental insights into semiconductor–electrolyte interactions, paving the way for more efficient and stable PEC devices.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"57 ","pages":"Article 101820"},"PeriodicalIF":9.7,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144792317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research Progress on the Application of Two-dimensional Materials in Flexible Antistatic Fields","authors":"Yuanpei Liu, Xiuchen Wang, Pengcheng Liu, Junchang Zuo, Zhe Liu","doi":"10.1016/j.mtphys.2025.101829","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101829","url":null,"abstract":"Static electricity presents a significant challenge in flexible applications—including protective clothing, wearable electronics, bionic robotics, and smart sensing—necessitating high-performance antistatic solutions. Two-dimensional materials (notably carbon nanotubes, graphene, and MXene) have emerged as core components for enhancing the antistatic performance of flexible systems, leveraging their exceptional conductivity and tunable interfacial characteristics. This work focuses on these three materials, transcending traditional methodological limitations. Grounded in percolation theory and interface science, we systematically and comprehensively compare their key performance dimensions in flexible antistatic applications for the first time. Critical dimensions analyzed include: conductive mechanisms, flexibility contributions, dispersion stability, processing compatibility, interfacial bonding strength, environmental stability, and optical transparency. This comparative analysis clarifies their respective applicability scenarios. Building on this multi-dimensional assessment, we identify critical technological bottlenecks and prospectively discuss future development directions: multi-functional integration, intelligent responsiveness, and green sustainability. Our analysis aims to provide scientific guidance and actionable insights to advance next-generation high-performance intelligent flexible antistatic materials.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"35 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144797431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring grain boundary defects via Cd doping in CZTSSe for efficient solar-driven hydrogen evolution under neutral conditions","authors":"Suyoung Jang ,&nbsp;Mayur A. Gaikwad ,&nbsp;Hongjae Shim ,&nbsp;Tae Ei Hong ,&nbsp;Maheswari Arunachalam ,&nbsp;JunHo Kim ,&nbsp;Soon Hyung Kang ,&nbsp;Jong-Sook Lee ,&nbsp;Jan Seidel ,&nbsp;Xiaojing Hao ,&nbsp;Jin Hyeok Kim","doi":"10.1016/j.mtphys.2025.101825","DOIUrl":"10.1016/j.mtphys.2025.101825","url":null,"abstract":"<div><div>Cu₂SnZn(S, Se)₄ (CZTSSe) has emerged as a sustainable, earth-abundant alternative to photoelectrochemical (PEC) water splitting devices as well as conventional copper indium gallium selenide (CIGS) photovoltaics for solar fuel production. However, limitations in the performance of CZTSSe persist due to intrinsic material challenges involving secondary phase segregation, grain boundary defects, and associated carrier recombination losses. This work demonstrates the fabrication of Pt/TiO₂/CdS/CZTSSe-Cd/Mo photocathode with strategic Cd doping via the chemical bath deposition (CBD). With combined sputter and CBD processes, the obtained high-quality CZTSSe-Cd films effectively suppress Zn defect clusters and alleviate Zn-related antisite defects at grain boundaries. As a result, the photovoltaic device comprised of CZTSSe-Cd achieved a maximum power conversion efficiency of 9.26 %. Moreover, as a photocathode for solar-driven hydrogen evolution, the CZTSSe-Cd delivered a record photocurrent density of 19.05 mA/cm² (at 0 V_RHE) in a neutral electrolyte (pH 7), representing a 41.4 % enhancement over pristine CZTSSe (∼13.47 mA/cm²). The Cd-induced defect passivation reduces the non-radiative recombination and modifies the band alignment enhancing charge extraction efficiency, further contributing to the overall boost in device efficiency. The results demonstrate that cation doping is a critical pathway for unlocking the full potential of kesterite absorbers in practical solar fuel applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"57 ","pages":"Article 101825"},"PeriodicalIF":9.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144787557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boron nitride nanosheets preserving functionalization strategy for enhancing thermal transport across van der Waals heterostructures","authors":"Chenghao Diao,&nbsp;Zhen Yang,&nbsp;Yuanyuan Duan","doi":"10.1016/j.mtphys.2025.101827","DOIUrl":"10.1016/j.mtphys.2025.101827","url":null,"abstract":"<div><div>Hexagonal boron nitride nanosheets (BNNS) are promising thermal interface materials (TIMs) for next-generation chip cooling, benefiting from their exceptional thermal conductivity and insulation properties. However, their practical deployment is hindered by the large thermal contact resistance (TCR) at BNNS/substrate interfaces. Previously proposed methods to reduce TCR often compromise the chemical integrity of BNNS, resulting in degraded performance. To overcome this challenge, we introduce a BNNS-preserving approach that involves functionalization strategy on the adjacent substrate—represented here by graphene—to improve interfacial thermal conductance (<em>G</em>) without disrupting the BNNS lattice. <em>G</em> across the BNNS/functionalized-graphene hetero-interface is enhanced by over 800 % compared to the pristine BNNS/graphene interface, reaching up to 1503 MW m⁻² K⁻¹, based on molecular dynamics (MD) simulations. We further employ an MD-based method to quantify interfacial coupling strength, elucidating the mechanism behind the enhancement of <em>G</em> by functionalization. This work offers a promising pathway for integrating BNNS into next-generation chip cooling TIMs.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"57 ","pages":"Article 101827"},"PeriodicalIF":9.7,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144787514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic microwave absorption in MXene/MnO2 composites achieved through interfacial engineering and controlled MnO2 morphology","authors":"Haowei Zhou, Xiao Li, Junyu Liu, Jinlin Zhang, Zhongming Liu, Moustafa Adel Darwish, M.M. Salem, Tao Zhou, Murat Yilmaz, A. Uddin, Di Zhou","doi":"10.1016/j.mtphys.2025.101822","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101822","url":null,"abstract":"Two-dimensional metal carbide Ti₃C₂T_x MXene has emerged as a promising material for electromagnetic pollution protection. Multilayered MXene, featuring a unique accordion-like structure, offers a natural advantage as a microwave absorber by extending the attenuation path of incident electromagnetic waves. In this study, the controlled growth of MnO₂ morphology is achieved by the two-parameter synergistic strategy of ‘hydrogen ion concentration-temperature’, and the composite structure with synergistic wave-absorbing effect is constructed by combining the interlayer interfacial engineering of MXene. By precisely controlling hydrogen ion concentration and hydrothermal temperature, MnO₂ pillars with distinct morphologies were achieved. All composite series exhibited significantly superior microwave absorption performance compared to pure multilayered MXene or MnO₂, highlighting the crucial role of component design and structural synergy in enhancing electromagnetic wave absorption (EWA). Notably, the composite incorporating hollow tetragonal MnO₂ pillars with larger apertures demonstrated optimal performance, attributed to maximized acceleration of electron transport. This composite achieved a minimum reflection loss (RL_min) of -60.04 dB at 16.64 GHz with an ultra-thin thickness of only 1.0 mm. The variations in EWA performance across the composite series are comprehensively discussed based on their microscopic loss mechanisms. This study paves a new avenue for designing high-performance MXene-based microwave absorbers through structural engineering.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"1 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144787513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From Materials to Device Engineering: Unravelling the Path to High Performance β-Ga2O3 based p-n Heterostructure Photodetectors","authors":"Arathy Sreekala Nair, Shantikumar Nair, Laxman Raju Thoutam","doi":"10.1016/j.mtphys.2025.101824","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101824","url":null,"abstract":"The wide bandgap oxide semiconductor β-Ga₂O₃ with intrinsic solar-blind spectral selectivity and ability to operate in extreme harsh conditions makes it a go-to material for the design of future low-powered miniaturized photodetectors. The review comprehensively discusses the integration of β-Ga₂O₃ with different <em>p</em>-type class of materials (oxides, nitrides, organics, silicon-based, ferroelectric, two-dimensional semiconductors, perovskites and others) to realize <em>p-n</em> heterojunction; that offers built-in electric field which helps in light induced charge separation and promote charge collection efficiency. The review categorically discusses the challenges and critical role played by crystallinity, lattice mismatch, and band alignments for β-Ga₂O₃ based different <em>p-n</em> heterostructures. The review outlines different interface and nanostructure engineering techniques used to mitigate lattice mismatch effects and tailor the band-alignments at the interface of β-Ga₂O₃/<em>p</em>-layers to yield optimum photodetection. Then, application of myriad surface, dopant, contact, and heterojunction engineering techniques towards β-Ga₂O₃ based different <em>p-n</em> heterostructures for efficient light induced charge carrier generation, separation, transport, extraction and collection is discussed. The review outlines and compares for the first time, the current state-of-art diverse class of β-Ga₂O₃ based <em>p-n</em> heterostructure photodetectors in terms of their responsivity, detectivity and spectral selectivity; and advocates for future synergistical engineering approaches to unravel their true potential.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"12 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144778525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biochar from renewable wood as an ion-conducting protective layer on stable magnesium metal anodes","authors":"Lin Wang ,&nbsp;Kai Sun ,&nbsp;Mei Yang ,&nbsp;Zengyan Wei ,&nbsp;Wenshu Yang ,&nbsp;Qiang Zhang ,&nbsp;Huasong Gou ,&nbsp;Gaohui Wu","doi":"10.1016/j.mtphys.2025.101821","DOIUrl":"10.1016/j.mtphys.2025.101821","url":null,"abstract":"<div><div>Rechargeable Mg-metal batteries (RMBs) are expected to be a potential competitor for lithium (Li) counterparts. However, the Mg metal anode readily passivates with conventional organic electrolytes, leading to the formation of an ion-blocking interphase layer. Here, we propose that bamboo charcoals (BCs) used as a Mg²⁺-conducting protective layer on the surface of Mg metal. In this process, it has been demonstrated that compared to apple-wood charcoals (ACs), BCs, distinguished by their plentiful functional groups, high degree of disorder, and large layer spacing, exhibit outstanding Mg²⁺ conductivity. Furthermore, we have proposed a facile and processable method to fabricate BCs/Mg composite, with a focus on circumventing the generation of by-products at the interface. The resultant system of three-dimensional (3D) BCs protective layer effectively increases the number of ion transport channels, thereby boosting ion transport efficiency while concurrently mitigating electrolyte decomposition. The Mg-Mg symmetrical cell with BCs/Mg anode demonstrates lower overpotential (∼0.27 V) and interfacial impedance than bare Mg and ACs/Mg electrode using a common electrolyte of Mg(TFSI)₂ in acetonitrile. The cycling stability, Coulombic efficiency (CE), and voltage hysteresis of the BCs/Mg||V₂O₅ full cell are greatly improved compared to the other two electrodes in both oxidation-resistant electrolyte and its water-containing electrolyte. We expect that this study will provide experimental substantiation by developing passivation-free anode materials tailored for alkali metal battery systems that require interface protection.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"57 ","pages":"Article 101821"},"PeriodicalIF":9.7,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144767060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing interface polarization by interface engineering of MoSe2/FeSe to achieve efficient microwave absorption","authors":"Shiha Huang, Xinglong Dong, Leizhen Pei, Xingguo Zhang","doi":"10.1016/j.mtphys.2025.101819","DOIUrl":"https://doi.org/10.1016/j.mtphys.2025.101819","url":null,"abstract":"The synergistic effects of magnetic-dielectric loss and interfacial polarization are commonly employed to enhance the performance of electromagnetic wave absorbers. Layered transition metal selenides are promising candidates for electromagnetic wave attenuation applications, owing to their high attenuation coefficients and the unique morphology resembling layered flowers. MoSe₂/FeSe layers were constructed by hydrothermal reaction of double-layer core-shell FeSiBCuNbZr@SiO₂@TiO₂ amorphous microspheres to improve the performance of the absorber. The construction of the MoSe₂/FeSe shells greatly improves impedance matching and introduces heterogeneous interfaces, which substantially increase the interface polarization loss. Especially for FST@MF-2, it exhibits excellent microwave absorption performance at 4.57 GHz with an RL_min of −62.06 dB. Furthermore, the effective absorption bandwidth (RL&lt;-10 dB) of this material can reach 4.25 GHz with 1.68 mm. Compared with perfect electrical conductor (PEC), the radar cross-section (RCS) reduction value of FST@MF-2 can reach 26.64 dB m² (from 5.22 dB m² to -21.42 dB m²), which helped to reduce the RCS of military equipment. This work presents a meaningful reference for designing electromagnetic wave absorbers, achieved via the integration of amorphous magnetic cores and multicomponent dielectric shells.","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"27 1","pages":""},"PeriodicalIF":11.5,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144748074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}