{"title":"Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films","authors":"Siliang Kuang , Zhenni Yang , Ziqi Zhang , Ziqian Sheng , Shenglong Wei , Yihong Chen , Wenjing Xu , Ye Yang , Duanyang Chen , Hongji Qi , Kelvin H.L. Zhang","doi":"10.1016/j.mtphys.2024.101555","DOIUrl":"10.1016/j.mtphys.2024.101555","url":null,"abstract":"<div><div>In this work, we report the transport, defect state and electronic structure properties of unintentionally doped (UID) and Sn doped <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> homo-epitaxial thin films grown by molecular beam epitaxy (MBE) with electron density ranging from 2.1 × 10<sup>16</sup> to 2.8 × 10<sup>19</sup> cm<sup>−3</sup>. The UID film with an electron density of 2.1 × 10<sup>16</sup> cm<sup>−3</sup> exhibits a notable RT mobility of 129 cm<sup>2</sup>/Vs and a peak mobility of 900 cm<sup>2</sup>/Vs at 80 K, achieving the state-of-the-art level for MBE-grown Ga<sub>2</sub>O<sub>3</sub> films. Temperature dependent Hall measurement reveal that Sn dopants have an activation energy of 56.7 meV. Synchrotron-based photoemission spectroscopy were further used to study insights into the evolution of electronic properties induced by Sn doping. An in-gap defect state was observed at the 1.5 eV above the valence band maximum for the Sn-doped Ga<sub>2</sub>O<sub>3</sub> film. The in-gap state acts as self-compensating centers affecting the overall doping efficiency and mobility. Furthermore, photoemission spectroscopic study also reveals an upward surface band bending existing at the surface region of Sn doped Ga<sub>2</sub>O<sub>3</sub> films. The identification of the in-gap state and surface upward band bending have significant implications for understanding the doping mechanisms in Ga<sub>2</sub>O<sub>3</sub> and its electronic device applications.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101555"},"PeriodicalIF":10.0,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142314129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Inhomogeneous fan-shaped surface state induced by isolated Weyl points in acoustic crystals and the associated multi-frequency sound-wave filters","authors":"Zhe-Qi Wang , Xiang-Feng Yang , Hua-Hua Fu","doi":"10.1016/j.mtphys.2024.101553","DOIUrl":"10.1016/j.mtphys.2024.101553","url":null,"abstract":"<div><div>The nontrivial surface states excited by isolated Weyl points (IWPs) have been scarcely studied to date, primarily due to their circumvention from the Nielsen-Ninomiya no-go theorem. In a groundbreaking study on this topic [Adv. Sci., 10, 2207508 (2023)], we discovered that IWPs can generate a novel nontrivial surface state, namely the multi-fold fan-shaped surface state, which we named. Here, we report another type of fan-shaped surface state generated by an IWP surrounded by a closed Weyl nodal wall (WNW). Unlike previous findings, the fan-shaped surface state discovered here exhibits inhomogeneous in spatial distribution, with significantly varying sizes of the fan blades. Moreover, this surface state can be generated by a charge-four IWP protected by the rotation symmetries {<span><math><msubsup><mrow><mi>C</mi></mrow><mrow><mn>31</mn></mrow><mrow><mo>+</mo></mrow></msubsup><mo>|</mo></math></span>000}, {<span><math><msub><mrow><mi>C</mi></mrow><mrow><mn>2</mn><mi>z</mi></mrow></msub><mo>|</mo><mfrac><mrow><mn>1</mn></mrow><mrow><mn>2</mn></mrow></mfrac></math></span>0<span><math><mfrac><mrow><mn>1</mn></mrow><mrow><mn>2</mn></mrow></mfrac></math></span>}, {<em>C</em><sub>2<em>x</em></sub>|0<span><math><mfrac><mrow><mn>1</mn></mrow><mrow><mn>2</mn></mrow></mfrac><mfrac><mrow><mn>1</mn></mrow><mrow><mn>2</mn></mrow></mfrac></math></span>} and the time-reversal symmetry in the space group (SG) No. 198. Importantly, our simulation results of the acoustic crystals in this SG revel that the inhomogeneous fan-shaped surface state can provide multiple channels for acoustic wave transmission without energy dissipation, demonstrating that this kind of nontrivial surface state offers an effective mechanism for designing multi-frequency acoustic wave filters and selectors.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101553"},"PeriodicalIF":10.0,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142320272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Superconducting thin films of (Cu,C)Ba2Ca2Cu3O9±δ with zero-resistance transition temperature close to 100 K","authors":"Meng-Jun Ou, Yuecong Liu, Yi Wang, Hai-Hu Wen","doi":"10.1016/j.mtphys.2024.101551","DOIUrl":"10.1016/j.mtphys.2024.101551","url":null,"abstract":"<div><div>High superconducting transition temperature is favorable for the applications of superconductors. Some cuprate superconductors have the transition temperatures above 100 K, such as the Hg- or Tl-based 1223 and 1234 phases, but many of them contain the toxic elements, like Hg and Tl. Meanwhile, the anisotropy of upper critical field or the effective mass of above mentioned Hg-, Tl-based systems, or the non-toxic <span><math><msub><mi>Bi</mi><mn>2</mn></msub></math></span><span><math><msub><mi>Sr</mi><mn>2</mn></msub></math></span><span><math><msub><mi>Ca</mi><mrow><mn>2</mn></mrow></msub></math></span><span><math><msub><mi>Cu</mi><mrow><mn>3</mn></mrow></msub></math></span><span><math><msub><mi>O</mi><mn>10</mn></msub></math></span> with <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>c</mi></mrow></msub></math></span> = 110 K is high, which makes the vortices easy to move and the irreversibility magnetic field is very low in the liquid nitrogen temperature region. Here we report the successful synthesis of the <span><math><mi>c</mi></math></span>-axis oriented <span><math><mrow><mo>(</mo><mi>C</mi><mi>u</mi><mo>,</mo><mi>C</mi><mo>)</mo></mrow><msub><mrow><mi>B</mi><mi>a</mi></mrow><mn>2</mn></msub></math></span><span><math><msub><mi>Ca</mi><mrow><mn>2</mn></mrow></msub></math></span><span><math><msub><mi>Cu</mi><mrow><mn>3</mn></mrow></msub></math></span><span><math><msub><mi>O</mi><mrow><mn>9</mn><mo>±</mo><mi>δ</mi></mrow></msub></math></span> superconducting thin film with the zero-resistance transition temperature reaching 99.7 K. The superconducting transitions are rather sharp as revealed by both resistivity and magnetization measurements. Temperature dependent resistivity has been measured under different magnetic fields, and the irreversibility lines have been achieved. The resistivity was also measured with the magnetic field rotated in the ac-plane, and the data can be nicely scaled by using the anisotropic Ginzburg-Landau model, yielding a temperature dependent anisotropy which varies from 17 at 110 K to 4 at 77 K. Additionally, the critical current density calculated from the magnetization-hysteresis-loops reaches about <span><math><mn>6</mn><mo>×</mo></math></span><span><math><msup><mn>10</mn><mrow><mn>5</mn></mrow></msup></math></span> <span><math><msup><mrow><mi>A</mi><mo>/</mo><mi>c</mi><mi>m</mi></mrow><mn>2</mn></msup></math></span> (zero field) at 77 K. Thus the film may be a good candidate for the applications of superconducting cables or high frequency superconducting filters in liquid nitrogen temperature region.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101551"},"PeriodicalIF":10.0,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142275817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qi Zou , Hongjing Shang , Zhongxin Liang , Lin Zhang , Xiaolei Wang , Yutong Chen , Changping Feng , Hongwei Gu , Zhifeng Ren , Fazhu Ding
{"title":"Near stoichiometric-ratio Mg3Sb2 thermoelectric thin films fabricated via multi-step annealing strategies","authors":"Qi Zou , Hongjing Shang , Zhongxin Liang , Lin Zhang , Xiaolei Wang , Yutong Chen , Changping Feng , Hongwei Gu , Zhifeng Ren , Fazhu Ding","doi":"10.1016/j.mtphys.2024.101552","DOIUrl":"10.1016/j.mtphys.2024.101552","url":null,"abstract":"<div><p>Recently, Zintl Mg<sub>3</sub>Sb<sub>2</sub>-based compounds have attracted attention due to high thermoelectric performance, but most studies are concentrated on bulk materials with few on films and devices, limiting their applications for microelectronics. Here, p-type Mg<sub>3</sub>Sb<sub>2</sub> films near stoichiometric-ratio are successfully fabricated using the multi-step experimental strategies based on the magnetron sputtering method. By tuning the energy structure and carrier transport, their thermoelectric performance is significantly improved, with a power factor up to 258.64 μW m<sup>−1</sup> K<sup>−2</sup> at ∼623 K. A Mg<sub>3</sub>Sb<sub>2</sub>-based generator is fabricated using these films, representing the first report of such a device. The output performance of this generator is evaluated and its power density is found to reach 9.4 μW cm<sup>−2</sup> at Δ<em>T</em> of 40 K, showing good potential for powering electronics. Furthermore, the generator shows good stability with no significant change in output properties after storage in air for 40 days or over periodic cycles of high- and room-temperature operation.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101552"},"PeriodicalIF":10.0,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tyler C. Sterling , Feng Ye , Seohyeon Jo , Anish Parulekar , Yu Zhang , Gang Cao , Rishi Raj , Dmitry Reznik
{"title":"Structural and electronic transformations in TiO2 induced by electric current","authors":"Tyler C. Sterling , Feng Ye , Seohyeon Jo , Anish Parulekar , Yu Zhang , Gang Cao , Rishi Raj , Dmitry Reznik","doi":"10.1016/j.mtphys.2024.101546","DOIUrl":"10.1016/j.mtphys.2024.101546","url":null,"abstract":"<div><p>In-situ diffuse neutron scattering experiments revealed that when electric current is passed through single crystals of rutile TiO<sub>2</sub> under conditions conducive to flash sintering, it induces the formation of parallel planes of oxygen vacancies. Specifically, a current perpendicular to the <em>c</em>-axis generates planes normal to the (132) reciprocal lattice vector, whereas currents aligned with the <em>c</em>-axis form planes normal to the (132) and to the (225) vector. The concentration of defects increases with incresing current. The structural modifications are linked to the appearance of signatures of interacting Ti<sup>3+</sup> moments in magnetic susceptibility, signifying a structural collapse around the vacancy planes. Electrical conductivity measurements of the modified material reveal several electronic transitions between semiconducting states (via a metal-like intermediate state) with the smallest gap being 27 meV. Pristine TiO<sub>2</sub> can be restored by heating followed by slow cooling in air. Our work suggests a novel paradigm for achieving switching of electrical conductivity related to the flash phenomenon.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101546"},"PeriodicalIF":10.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142172678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoying Wang , Guoyu Shu , Guimei Zhu , Jian-Sheng Wang , Jun Sun , Xiangdong Ding , Baowen Li , Zhibin Gao
{"title":"An interpretable formula for lattice thermal conductivity of crystals","authors":"Xiaoying Wang , Guoyu Shu , Guimei Zhu , Jian-Sheng Wang , Jun Sun , Xiangdong Ding , Baowen Li , Zhibin Gao","doi":"10.1016/j.mtphys.2024.101549","DOIUrl":"10.1016/j.mtphys.2024.101549","url":null,"abstract":"<div><p>Lattice thermal conductivity (<em>κ</em><sub><em>L</em></sub>) is a crucial physical property of crystals with applications in thermal management, such as heat dissipation, insulation, and thermoelectric energy conversion. However, accurately and rapidly determining <em>κ</em><sub><em>L</em></sub> poses a considerable challenge. In this study, we introduce a formula that achieves high precision (mean relative error = 8.97 %) and provides fast predictions, taking less than 1 min, for <em>κ</em><sub><em>L</em></sub> across a wide range of inorganic binary and ternary materials. Our interpretable, dimensionally aligned and physical grounded formula forecasts <em>κ</em><sub><em>L</em></sub> values for 4601 binary and 6995 ternary materials in the Materials Project database. Notably, we predict undiscovered high <em>κ</em><sub><em>L</em></sub> values for AlBN<sub>2</sub> (<em>κ</em><sub><em>L</em></sub> = 101 W m<sup>−1</sup> K<sup>−1</sup>) and the undetected low <em>κ</em><sub><em>L</em></sub> Cs<sub>2</sub>Se (<em>κ</em><sub><em>L</em></sub> = 0.98 W m<sup>−1</sup> K<sup>−1</sup>) at room temperature. This method for determining <em>κ</em><sub><em>L</em></sub> streamlines the traditionally time-consuming process associated with complex phonon physics. It provides insights into microscopic heat transport and facilitates the design and screening of materials with targeted and extreme <em>κ</em><sub><em>L</em></sub> values through the application of phonon engineering. Our findings offer opportunities for controlling and optimizing macroscopic transport properties of materials by engineering their bulk modulus, shear modulus, and Grüneisen parameter.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101549"},"PeriodicalIF":10.0,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142240020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shijie Jia , Longbin Yang , Yang Han , Tengfei Zhang , Xiaowei Zhang , Pengyu Gong , Shiyu Du , Yitung Chen , Jiabao Ding
{"title":"Rapid growth of CO2 hydrate as a promising way to mitigate the greenhouse effect","authors":"Shijie Jia , Longbin Yang , Yang Han , Tengfei Zhang , Xiaowei Zhang , Pengyu Gong , Shiyu Du , Yitung Chen , Jiabao Ding","doi":"10.1016/j.mtphys.2024.101548","DOIUrl":"10.1016/j.mtphys.2024.101548","url":null,"abstract":"<div><p>Hydrate method to capture and store CO<sub>2</sub> under sea floor as one of the most novel and promising methods to deal with the greenhouse effect and reduce carbon emission has gained increasing attention nowadays. But how to grow CO<sub>2</sub> hydrate under promotion in confinement has rarely been exploited. Here the growth of CO<sub>2</sub> hydrate with tetrahydrofuran (THF) promoter in confinement was systematically investigated by molecular dynamics simulations, with the counterpart growth but without promoter as a comparison. With promoter, an obviously more rapid growth of CO<sub>2</sub> hydrate was observed and CO<sub>2</sub> molecules went inside water cages along with the THF ones but not gathered into bubbles during the formation of clathrate. However, the gathering of CO<sub>2</sub> bubbles in the system without promotion hindered the obvious formation of clathrate. The vivid movies and physical quantities were analyzed in detail in order to further unravel the physical mechanism of the growth process and the promotion effect of THF. The obtained simulation results proved that THF could indeed promote the confined growth of CO<sub>2</sub> hydrate by preventing the formation of large CO<sub>2</sub> bubbles, providing a theoretical foundation for the geological storage of CO<sub>2</sub> hydrate in permafrost areas and marine sediments.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101548"},"PeriodicalIF":10.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P.N. Ferreira , R. Lucrezi , I. Guilhon , M. Marques , L.K. Teles , C. Heil , L.T.F. Eleno
{"title":"Ab initio modeling of superconducting alloys","authors":"P.N. Ferreira , R. Lucrezi , I. Guilhon , M. Marques , L.K. Teles , C. Heil , L.T.F. Eleno","doi":"10.1016/j.mtphys.2024.101547","DOIUrl":"10.1016/j.mtphys.2024.101547","url":null,"abstract":"<div><p>Designing new, technologically relevant superconductors has long been at the forefront of solid-state physics and chemistry research. However, developing efficient approaches for modeling the thermodynamics of superconducting alloys while accurately evaluating their physical properties has proven to be a very challenging task. To fill this gap, we propose an ab initio thermodynamic statistical method, the Extended Generalized Quasichemical Approximation (EGQCA), to describe off-stoichiometric superconductors. Within EGQCA, one can predict any computationally accessible property of the alloy, such as the critical temperature in superconductors and the electron-phonon coupling parameter, as a function of composition and crystal growth conditions using a few small supercells. Importantly, EGQCA incorporates directly chemical ordering, lattice distortions, and vibrational contributions. As a proof of concept, we applied EGQCA to the well-known Al-doped MgBb<sub>2</sub> and to niobium alloyed with titanium and vanadium, showing a remarkable agreement with the experimental data. Additionally, we modeled the near-room temperature sodalite-like Y<sub>1−<em>x</em></sub>Ca<sub><em>x</em></sub>H<sub>6</sub> superconducting solid solution, demonstrating that EGQCA particularly possesses a promising potential for designing <em>in silico</em> high-<em>T</em><sub>c</sub> superhydride alloys. Our approach enables the high-throughput screening of complex superconducting solid solutions, providing valuable insights into these systems' synthesis, thermodynamics, and physical properties.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101547"},"PeriodicalIF":10.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Guan-Wei Peng , Hung-Chin Wang , Yu-Jie Zhong , Chao-Cheng Kaun , Ching-Hao Chang
{"title":"Driving noncollinear interlayer exchange coupling intrinsically in magnetic trilayers","authors":"Guan-Wei Peng , Hung-Chin Wang , Yu-Jie Zhong , Chao-Cheng Kaun , Ching-Hao Chang","doi":"10.1016/j.mtphys.2024.101544","DOIUrl":"10.1016/j.mtphys.2024.101544","url":null,"abstract":"<div><p>Ferromagnetic side layers sandwiching a nonmagnetic spacer as a metallic trilayer has become a pivotal platform for achieving spintronic devices. Recent experiments demonstrate that manipulating the width or the nature of conducting spacer induces noncollinear magnetic alignment between the side layers. Our theoretical analysis reveals that altering the width of spacer significantly affects the interlayer exchange coupling (IEC), resulting in noncollinear alignment. Through analytic and first-principles methods, our study on the Fe/Ag/Fe trilayer shows that at a specific width of the Ag spacer, the magnetic moments of side layers tend to be perpendicular. This alignment is mediated by Ag quantum well states, exhibiting spin spirals across the trilayer. Our results reveal that the noncollinear IEC offers a degree of freedom to control magnetic devices and boot spintronic technology with improved transport capabilities.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"48 ","pages":"Article 101544"},"PeriodicalIF":10.0,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142163227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thi Sinh Vo , Byounghyun Jeon , Van Phuc Thien Nguyen , Trung Hoang , Khin Moe Lwin , Soobean Han , Tran Thi Bich Chau Vo , Kyunghoon Kim
{"title":"A comprehensive review of laser processing-assisted 2D functional materials and their specific applications","authors":"Thi Sinh Vo , Byounghyun Jeon , Van Phuc Thien Nguyen , Trung Hoang , Khin Moe Lwin , Soobean Han , Tran Thi Bich Chau Vo , Kyunghoon Kim","doi":"10.1016/j.mtphys.2024.101536","DOIUrl":"10.1016/j.mtphys.2024.101536","url":null,"abstract":"<div><p>With the increasing development of advanced technologies and new materials, recent trends in laser processing-assisted two-dimensional (2D) functional materials have gained significant interest. The ability to precisely control the features of these 2D materials through laser processing has expanded their potential applications in various fields. This review presents a comprehensive summary of recent trends in and potential applications of laser-assisted processing of 2D functional materials. General concepts of working principles, key parameters (i.e., laser wavelength, pulse duration, and repetition rate), and technical approaches (i.e., direct laser writing, doping, thinning, and creating defects) of laser processing are first introduced and discussed carefully. Laser processing-assisted 2D functional materials are then extensively discussed and listed. Finally, some specific applications (i.e., sensing devices, semiconductors, supercapacitors, and batteries, etc.) of laser processing-assisted 2D functional materials are presented. This review provides insights into laser processing-assisted 2D functional materials, offering guidance to researchers and industries on selecting the most suitable advanced technologies and potential 2D materials. This review also offers viewpoints and outlooks for future research directions and potential innovations that will markedly contribute to advances in laser processing-assisted 2D functional materials.</p></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"47 ","pages":"Article 101536"},"PeriodicalIF":10.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142098191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}