A review on footsteps of a revolution in electronics: Spin memristors

Abstract

Spin memristors are devices that use electron spin to make memory technology scalable, high-performance, and energy-efficient. These devices offer significant advantages over traditional memristors, including faster switching, lower energy consumption, and enhanced durability. This review study summarizes current research and offers specific conclusions regarding the basic ideas, material compositions, and device designs of spin memristors. Additionally, significant advancements are discussed, including a tenfold increase, improved switching efficiency, millisecond-scale operation, and extended lifespan. The review study outlines the evolution of memristor technology and its role in neuromorphic computing, focusing on fundamental mechanisms such as magnetoresistance, spin transfer torque, and voltage-controlled magnetic anisotropy. The latest advancements in spin-orbit torque (SOT) devices, hybrid constructions using two-dimensional (2D) materials, and magnetic tunnel junctions (MTJs) are also discussed. Moreover, potential applications in neuromorphic computing, quantum information processing, and advanced computing paradigms are also explored in the study. To help researchers fill important gaps in material optimization, scalability, and integration with conventional electronics, this work offers practical insights. By bridging the gap between traditional memristors and spintronics, this review will serve the purpose of contributing to the advancement and commercialization of spin memristors in next-generation computing systems.