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2014 Conference on Optoelectronic and Microelectronic Materials & Devices最新文献

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Long-term stability of ICPCVD a-Si under prolonged heat treatment 长时间热处理下ICPCVD a-Si的长期稳定性
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038680
K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone
{"title":"Long-term stability of ICPCVD a-Si under prolonged heat treatment","authors":"K. Brookshire, M. Martyniuk, K. K. M. D. Dilusha Silva, Yinong Liu, L. Faraone","doi":"10.1109/COMMAD.2014.7038680","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038680","url":null,"abstract":"Inductively coupled plasma enhanced chemical vapor deposited (ICPCVD) a-Si is used as a structural material in many microelectromechanical systems (MEMS). For a-Si to function as a sound structural component, the material must display long term mechanical stability. This paper evaluates the Young's modulus, hardness, and residual stress of a-Si under prolonged heat treatment. It is found that Young's modulus and hardness are not impacted by heat treatment, while the residual stress becomes more tensile with increased annealing time. Increased tensile stress is a result of hydrogen offgassing which can lead to improved film stability [1].","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition 偏靶离子束沉积制备Si1−xGex薄膜的纳米压痕
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038692
R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk
{"title":"Nanoindentation of Si1−xGex thin films prepared by biased target ion beam deposition","authors":"R. Ge, X. Hou, K. Brookshire, N. Krishnan, Dilusha Silva, J. Bumgarner, Yinong Liu, L. Faraone, M. Martyniuk","doi":"10.1109/COMMAD.2014.7038692","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038692","url":null,"abstract":"The mechanical properties of Si<sub>1-x</sub>Ge<sub>x</sub> thin films are studied via nanoindentation. The Si<sub>1-x</sub>Ge<sub>x</sub> thin films are prepared with a biased target ion beam deposition (BTIBD) method. We investigate the effect of varying the Si to Ge composition ratio on the elastic modulus and hardness of the resulting alloyed films. In comparison to pure BTIBD Si (E<sub>si</sub> = 154GPa, H<sub>si</sub> = 9.9GPa), for Si<sub>1-x</sub>Ge<sub>x</sub> a decreasing trend in Young's modulus and hardness is observed to be associated with the increase in Ge content, and for Si<sub>0.5</sub>Ge<sub>0.5</sub> the values of 139 GPa and 8.4GPa are found to represent the Young's modulus and hardness, respectively.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115614340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thin-film mid-infrared semiconductor waveguide technology 薄膜中红外半导体波导技术
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038717
B. Mizaikoff, X. Wang, M. Sieger, L. Faraone, J. Antoszewski, W. Lei, M. Jetter, P. Michler
{"title":"Thin-film mid-infrared semiconductor waveguide technology","authors":"B. Mizaikoff, X. Wang, M. Sieger, L. Faraone, J. Antoszewski, W. Lei, M. Jetter, P. Michler","doi":"10.1109/COMMAD.2014.7038717","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038717","url":null,"abstract":"In this contribution we describe recent progresses on ultra-sensitive chemical sensing in the mid-infrared (MIR; 3-20 μm) spectral range combining microfabricated thin-film GaAs/AlGaAs and HgCdTe waveguides with quantum cascade lasers (QCL). Epitaxial grown methods including molecular beam epitaxy (MBE) and metal-organic vapor-phase epitaxy (MOVPE) were applied facilitating the growth of 6 μm thin on-chip waveguide layers, which may be further structured using e.g., reactive ion etching (RIE) and/or focused ion beam milling (FIB) for establishing a variety of substrate-integrated waveguide geometries. Such waveguides readily combine with single-wavelength-emitting or broadly tunable quantum cascade lasers (tQCL) providing access to the entire MIR window for advanced chem/bio sensing applications.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114068902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hydrogen in ZnO: X-ray absorption measurements and multiple scattering theory 氧化锌中的氢:x射线吸收测量和多重散射理论
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038652
M. Petravić, R. Peter, M. Varašanec, Y. Yang, M. Yano, K. Koike
{"title":"Hydrogen in ZnO: X-ray absorption measurements and multiple scattering theory","authors":"M. Petravić, R. Peter, M. Varašanec, Y. Yang, M. Yano, K. Koike","doi":"10.1109/COMMAD.2014.7038652","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038652","url":null,"abstract":"We have identified the microscopic structure of hydrogen donors in hydrogenated ZnO samples using near-edge x-ray absorption fine structure (NEXAFS) spectroscopy and ab initio multiple scattering calculations. We present the evidence of hydrogen occupying interstitial bond-centred locations where hydrogen atoms are attached to the host O atoms in bonds that are not parallel to the c axis. This work illustrates that the combined NEXAFS measurements and multiple scattering calculations can be used to identify the local local structural configuration of hydrogen impurities in ZnO that should have broad applications for other hydrogen-containing systems.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115148201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A self-resetting piezoelectric energy harvesting rectifier 一种自复位压电能量收集整流器
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038686
ShaoHua Lu, F. Boussaid
{"title":"A self-resetting piezoelectric energy harvesting rectifier","authors":"ShaoHua Lu, F. Boussaid","doi":"10.1109/COMMAD.2014.7038686","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038686","url":null,"abstract":"This paper presents an efficient piezoelectric energy harvesting rectifier based on a modified synchronized switch harvesting on inductor (SSHI) technique. The proposed circuit does not rely on complex control circuits to operate and eliminates the need for an inductor, thereby enabling full CMOS integration. Reported results show that the harvested energy is more than 3.3 times that of the conventional full wave bridge rectifier.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123359302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications 基于hgcdte的低红外nBn探测器的带对带隧穿(tbbt)
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038696
N. Akhavan, G. Jolley, G. U. Membreno, J. Antoszewski, L. Faraone
{"title":"Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications","authors":"N. Akhavan, G. Jolley, G. U. Membreno, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2014.7038696","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038696","url":null,"abstract":"In this paper we present a theoretical study on the influence of band-to-band-tunnelling (BTBT) in HgCdTe-based nBn detectors for longwave infrared (LWIR) applications. Numerical modelling shows that BTBT strongly depends on the barrier parameters and degrades the detectivity of LWIR nBn detectors. Nevertheless, exploring alternative barrier materials or engineering designs which are able to suppress the BTBT in LWIR nBn detectors is necessary in order to achieve the ultimate performance of HgCdTe nBn detectors for LWIR applications.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130092232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microcantilevers as a platform for the detection of hydrogen 微悬臂作为探测氢气的平台
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038690
G. Putrino, A. Keating, M. Martyniuk, L. Faraone, J. Dell
{"title":"Microcantilevers as a platform for the detection of hydrogen","authors":"G. Putrino, A. Keating, M. Martyniuk, L. Faraone, J. Dell","doi":"10.1109/COMMAD.2014.7038690","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038690","url":null,"abstract":"The nanomechanical movements of microcantilevers are a unique tool for the detection of various chemicals. When a microcantilever is functionalized with a surface which specifically adsorbs the chemical of interest, the resulting surface stress will bend the microcantilever. The measurement of this bending can provide an accurate measure of the concentration of the chemical of interest. Here we consider the use of microcantilevers to detect hydrogen under ambient atmospheric conditions. We find that nanomechanical movements of a palladium/silicon nitride cantilever tip correspond to sub-milliTorr changes in the partial pressure of hydrogen in air.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128241728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Deposition heating effect on CdS thin films prepared by thermal evaporation for CdTe solar cells 热蒸发法制备CdTe太阳能电池用CdS薄膜的沉积加热效应
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038678
Won-Jae Lee, J. Sharp, G. Umana-Membreno, J. Dell, L. Faraone
{"title":"Deposition heating effect on CdS thin films prepared by thermal evaporation for CdTe solar cells","authors":"Won-Jae Lee, J. Sharp, G. Umana-Membreno, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2014.7038678","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038678","url":null,"abstract":"Cadmium sulfide (CdS) thin films were prepared by thermal evaporation at different substrate temperature in order to compare their influence on properties of the films for CdS/CdTe solar cells. The investigated substrate temperature during CdS deposition was ranged from 30°C(room temperature) to 200°C. An increase in the substrate temperature yielded to highly transparent CdS thin films. However, the resistivity increased significantly with decrease of carrier concentration and mobility as substrate temperature increased. Photovoltaic properties of devices using the CdS thin films were investigated by fabricating CdS/CdTe solar cells at different CdS deposition temperature. CdS preparation temperature influenced significantly on open-circuit voltage which decreased with increasing deposition temperature. It is found that the CdTe solar cell using the CdS thin film deposited at room temperature had higher efficiency because substrate heating at 330°C during CdTe deposition also improved the optical and electrical properties of the CdS thin films simultaneously.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134449269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Strain simulation and MBE growth of CdTe on GaSb substrates 碲化镉在GaSb衬底上的应变模拟及MBE生长
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038681
R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone
{"title":"Strain simulation and MBE growth of CdTe on GaSb substrates","authors":"R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2014.7038681","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038681","url":null,"abstract":"In this paper, we present a study on ANSYS strain analysis and MBE growth of CdTe epilayers on GaSb substrates. The ANSYS simulation result shows that GaSb performs much better than other alternative substrates, e.g. GaAs. To verify the simulation results, CdTe buffer layers were grown by MBE on GaSb, which show material quality comparable to or slightly better than that on GaAs substrate. Furthermore, TEM study on the CdTe layers grown on GaSb indicates that fewer dislocations are generated around the interface between CdTe and GaSb, which accords with the simulation results. This preliminary study shows the great potential of GaSb to be next generation alternative substrates for growing high quality HgCdTe infrared materials.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131650718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An investigation into signal stability during measurement of AlGaN/GaN transistor-based chemical sensors 基于AlGaN/GaN晶体管的化学传感器测量信号稳定性研究
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038685
F. L. Khir, A. Lyons, M. Myers, M. Baker, B. Nener, G. Parish
{"title":"An investigation into signal stability during measurement of AlGaN/GaN transistor-based chemical sensors","authors":"F. L. Khir, A. Lyons, M. Myers, M. Baker, B. Nener, G. Parish","doi":"10.1109/COMMAD.2014.7038685","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038685","url":null,"abstract":"AlGaN/GaN transistor-based sensors are highly sensitive to changes in charge at the semiconductor-solution interface. Significant care controlling the measurement conditions is required for stable and robust sensor operation. In this study various aspects of measurement protocol were investigated in order to minimise the drift in sensor output during measurements. The most significant factors were found to be the use of buffered ionic solutions and the use of a Faraday cage.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115520650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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