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2014 Conference on Optoelectronic and Microelectronic Materials & Devices最新文献

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Preparation and characterization of Cu2ZnGeS4 thin films by sulfurizing reactively sputtered precursors 反应溅射前驱体硫化法制备Cu2ZnGeS4薄膜及表征
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038705
Jian Chen, Lianbo Zhao, Fangyang Liu, Shujuan Huang, X. Hao
{"title":"Preparation and characterization of Cu2ZnGeS4 thin films by sulfurizing reactively sputtered precursors","authors":"Jian Chen, Lianbo Zhao, Fangyang Liu, Shujuan Huang, X. Hao","doi":"10.1109/COMMAD.2014.7038705","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038705","url":null,"abstract":"Cu2ZnGeS4 (CZGS) thin films were first grown by reactive magnetron co-sputtering technique and post sulfurization. Raman and X-ray diffraction (XRD) examination confirm the synthesized films to be tetragonal stannite CZGS together with ZnS secondary phase. The effect of two manufacturing conditions was investigated: sputtering pressure for precursor deposition and sulfurization temperature. By decreasing the sputtering pressure, the CZGS grain size in the sulfurized films is found to be increased. By increasing the sulfurization temperature, the CZGS grain size is also increased. However, serious voids and pinholes are found in the sample undergoing high sulfurization temperature. The formation of voids and pinholes can be explained by Ge loss via Ge sulfides sublimation. Besides, the M0S2 layer thickness is found dramatically increased after high-temperature sulfurization process.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131678382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coupling of a quantum emitter to the surface plasmons of a nanowire 量子发射器与纳米线表面等离子体激元的耦合
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038700
M. Aramesh, A. Djalalian-Assl, J. Červenka, A. Roberts, K. Ostrikov, S. Prawer
{"title":"Coupling of a quantum emitter to the surface plasmons of a nanowire","authors":"M. Aramesh, A. Djalalian-Assl, J. Červenka, A. Roberts, K. Ostrikov, S. Prawer","doi":"10.1109/COMMAD.2014.7038700","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038700","url":null,"abstract":"A finite element method is applied to study the coupling of a single photon emitter in nanodiamond to surface plasmons of a silver nanowire. Sensitivity of this system to different parameters is explored. Novel applications for the coupled system are proposed.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133257248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires 提高砷化镓纳米线辐射效率的等离子体腔
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038702
S. Mokkapati, D. Saxena, N. Jiang, H. Tan, C. Jagadish
{"title":"Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires","authors":"S. Mokkapati, D. Saxena, N. Jiang, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2014.7038702","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038702","url":null,"abstract":"We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"231 1-2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132880141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of single hole transport in a highly tunable silicon quantum dot 高度可调谐硅量子点中单孔输运的观察
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038641
R. Li, F. Hudson, A. Dzurak, A. Hamilton
{"title":"Observation of single hole transport in a highly tunable silicon quantum dot","authors":"R. Li, F. Hudson, A. Dzurak, A. Hamilton","doi":"10.1109/COMMAD.2014.7038641","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038641","url":null,"abstract":"We report the cryogenic-temperature electrical measurements of a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor. A multi-layer gate electrode architecture allows independent control of hole densities in the leads and quantum dot. Stable Coulomb blockade oscillations are observed over a large range with minimal hysteresis. Separate tunability of the tunneling barrier enables the dot occupancy to reach the last few holes, as demonstrated by source-drain bias spectroscopy. The structure is highly flexible that a double quantum dot can be define by appropriate gate bias.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130261914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Top-down approach for fabricating InP nanowires with ohmic metal contacts 自顶向下制造带有欧姆金属触点的InP纳米线的方法
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038636
S. Naureen, N. Shahid, K. Vora, M. Lysevych, H. Tan, C. Jagadish, F. Karouta
{"title":"Top-down approach for fabricating InP nanowires with ohmic metal contacts","authors":"S. Naureen, N. Shahid, K. Vora, M. Lysevych, H. Tan, C. Jagadish, F. Karouta","doi":"10.1109/COMMAD.2014.7038636","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038636","url":null,"abstract":"Electrical contacts between metals and semiconductors are fundamentally important for practical semiconductor devices. This work reports the electrical characterization of nanowire arrays fabricated by a top-down approach, where electron beam lithography (EBL) and a highly anisotropic Cl2/H2/Ar inductively coupled plasma (ICP) reactive ion etching (RIE) is utilised to generate vertical arrays of InP nanowire arrays. Preliminary results show ohmic behavior from these arrays.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"174 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116464521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Embedding of quantum-dot cellular automata circuits onto a quantum annealing processor 量子点元胞自动机电路在量子退火处理器上的嵌入
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038689
Jacob Retallick, M. Babcock, Miguel Aroca-Ouellette, Shane McNamara, S. Wilton, Aidan Roy, Mark Johnson, K. Waluś
{"title":"Embedding of quantum-dot cellular automata circuits onto a quantum annealing processor","authors":"Jacob Retallick, M. Babcock, Miguel Aroca-Ouellette, Shane McNamara, S. Wilton, Aidan Roy, Mark Johnson, K. Waluś","doi":"10.1109/COMMAD.2014.7038689","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038689","url":null,"abstract":"Simulations of quantum-dot cellular automata (QCA) on classical computers are highly limited due to the exponential growth in resources required for the numerical simulation of quantum mechanics involving networks of finite state nodes. Recent advancements in computing based on networks of flux-qubits, and in particular the platform technology developed by D-Wave Systems Inc., have made it possible to explore QCA networks that are intractable on classical machines. However, the embedding of such networks onto the available processor architecture is a key challenge in setting up such simulations. In this work, two approaches to embedding QCA circuits are characterized: a dense placement algorithm that uses a routing method based on negotiated congestion; and a heuristic method implemented in D-Wave's SAPI package. Both embedding methods are characterized using a set of basic QCA benchmark circuits of various sizes and complexities. When including diagonal interactions only in the case of an inverter, both methods were able to embed a 4-bit 2-1 multiplexer circuit containing 192 non-driver QCA cells onto the 512 qubit D-Wave Vesuvius chip architecture. Including diagonal interactions for all cells, both methods successfully embedded a serial adder circuit containing 126 non-driver cells.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123377930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Metrology of holes in gold nano-film using interferometric microscopy 金纳米膜孔的干涉显微测量
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-02-10 DOI: 10.1109/COMMAD.2014.7038710
D. Little, D. Kane
{"title":"Metrology of holes in gold nano-film using interferometric microscopy","authors":"D. Little, D. Kane","doi":"10.1109/COMMAD.2014.7038710","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038710","url":null,"abstract":"We present an optical metrology technique based on phase-shifting interferometric (PSI) microscopy applied to circular holes in a gold nano-film. We demonstrate that the optical phase measured at the image plane can be accurately calculated, even in the presence of diffraction. For holes with a radius less than 200 nm, the optical phase exhibited a strong dependence on hole size, highlighting the metrological potential of this technique. Measurement of the coherent impulse response of the interferometric microscope, and refractive index measurements of nanoparticles and nano structure s are also discussed as potential applications.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130363476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic nose for gas sensing applications 用于气体传感应用的电子鼻
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-02-10 DOI: 10.1109/COMMAD.2014.7038665
K. Prasad, E. Bassey, P. Sallis
{"title":"Electronic nose for gas sensing applications","authors":"K. Prasad, E. Bassey, P. Sallis","doi":"10.1109/COMMAD.2014.7038665","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038665","url":null,"abstract":"Tin oxide (SnO2), Zinc Oxide (ZnO) and their composites were used to fabricate gas sensors (electronic nose) for sensing methanol, ethanol and other hydrocarbons. The sensitivity behavior of the electronic nose was studied in detail and a power model has been developed. The sensitivity shows a power law dependence with the gas concentration and exponential dependence with the temperature.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115483741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors 纳米级聚合物电解质:纳米线晶体管的制造和应用
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-02-10 DOI: 10.1109/COMMAD.2014.7038713
D. Carrad, A. Burke, S. Svensson, R. Lyttleton, H. Joyce, H. Tan, C. Jagadish, K. Storm, L. Samuelson, H. Linke, A. Micolich
{"title":"Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors","authors":"D. Carrad, A. Burke, S. Svensson, R. Lyttleton, H. Joyce, H. Tan, C. Jagadish, K. Storm, L. Samuelson, H. Linke, A. Micolich","doi":"10.1109/COMMAD.2014.7038713","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038713","url":null,"abstract":"We present a method to pattern the poly(ethylene oxide)/LiClO4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a `wrap-gate' geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics comparable to conventional metal/oxide wrap-gates at room temperature. The strong tuning at room temperature combined with the `freeze-out' of Li+/ClO4- transport for T <; 220 K allows a wide range of charge environments to be set and held for quantum transport measurements. The simplicity of fabrication and excellent gate characteristics broadens the scope for polymer electrolyte gating in studies of nanowires and other nanoscale devices.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116425725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InP-based radial heterostructures grown on [100] nanowires [100]纳米线上生长的inp基径向异质结构
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-02-10 DOI: 10.1109/COMMAD.2014.7038682
H. Fonseka, P. Caroff, Y. Guo, F. Wang, J. Wong-Leung, H. Tan, C. Jagadish
{"title":"InP-based radial heterostructures grown on [100] nanowires","authors":"H. Fonseka, P. Caroff, Y. Guo, F. Wang, J. Wong-Leung, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2014.7038682","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038682","url":null,"abstract":"InP-InxGa(1-x)As-InP quantum well tube (QWT) structures are grown on InP nanowires that are [100] oriented. The In mole fraction, x is varied between 0 and 1. The QWTs grown on the facets of the [100] nanowires that have {100} and {011} side facets forming an octagonal cross-section, are found to be highly non-uniform. Bright emission is observed at room temperature from these QWTs. Band-gap tunability in the near to mid-infrared region is achieved by controlling the thickness and composition of the quantum well.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127252533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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