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2014 Conference on Optoelectronic and Microelectronic Materials & Devices最新文献

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Indium tin oxide film characterization using the classical Hall Effect 利用经典霍尔效应表征氧化铟锡薄膜
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2015-03-12 DOI: 10.1109/COMMAD.2014.7038675
L. W. V. van Beveren, E. Panchenko, N. Anachi, L. Hyde, D. Smith, T. James, A. Roberts, J. McCallum
{"title":"Indium tin oxide film characterization using the classical Hall Effect","authors":"L. W. V. van Beveren, E. Panchenko, N. Anachi, L. Hyde, D. Smith, T. James, A. Roberts, J. McCallum","doi":"10.1109/COMMAD.2014.7038675","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038675","url":null,"abstract":"We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"14 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128990157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Positioning of the active region in broad-waveguide laser for optimized hole injection 宽波导激光器中有源区域的定位，以优化空穴注入
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038647
M. Lysevych, H. Tan, F. Karouta, C. Jagadish
{"title":"Positioning of the active region in broad-waveguide laser for optimized hole injection","authors":"M. Lysevych, H. Tan, F. Karouta, C. Jagadish","doi":"10.1109/COMMAD.2014.7038647","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038647","url":null,"abstract":"The active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116997971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge pumping through isolated dopant atoms 电荷通过孤立的掺杂原子泵送
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038716
G. Tettamanzi, J. van der Heijden, S. Rogge
{"title":"Charge pumping through isolated dopant atoms","authors":"G. Tettamanzi, J. van der Heijden, S. Rogge","doi":"10.1109/COMMAD.2014.7038716","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038716","url":null,"abstract":"Recently, a new kind of quantised charge pumping has been demonstrated (see G. C. Tettamanzi et al, 2014 New J. Phys., 16 063036) by using a single dopant atom quantised charge pump (SDA-QCP). The characteristics of the SDA-QCP were found to be quite different from the more conventional quantum dot charge pumps (QD-QCPs). This difference originates from the intrinsic dissimilarity in the confinement potential that traps the electrons during the pumping cycle and results in a lower non-adiabatic excitation error rate for the SDA-QCP. Here the experimentally determined performance of the SDA-QCP is compared to a new model that describes the behaviour in terms of frequency, power and the position of the dopant in the channel.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128186457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Temperature dependence of threshold switching in NbOx thin films NbOx薄膜中阈值开关的温度依赖性
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038673
Shuai Li, Xinjun Liu, S. K. Nandi, D. Venkatachalam, R. Elliman
{"title":"Temperature dependence of threshold switching in NbOx thin films","authors":"Shuai Li, Xinjun Liu, S. K. Nandi, D. Venkatachalam, R. Elliman","doi":"10.1109/COMMAD.2014.7038673","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038673","url":null,"abstract":"The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to a reduction in the resistance of the high-resistance state and to a reduction in the threshold switching voltage. These results are discussed in relation to the transport properties of NbOx and the IMT switching model.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115800246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Investigation of mid-infrared AlInSb LEDs with an n-i-p structure n-i-p结构中红外AlInSb led的研究
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038646
Ying Ding, L. Meriggi, M. Steer, I. Thayne, C. MacGregor, M. Sorel, C. Ironside
{"title":"Investigation of mid-infrared AlInSb LEDs with an n-i-p structure","authors":"Ying Ding, L. Meriggi, M. Steer, I. Thayne, C. MacGregor, M. Sorel, C. Ironside","doi":"10.1109/COMMAD.2014.7038646","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038646","url":null,"abstract":"We report on the investigation on mid-infrared AlInSb LEDs with an n-i-p structure. Compared to the conventional AlInSb LEDs with a p-i-n structure, a better current spreading corresponding to a uniform current distribution in the active region is expected in the n-i-p structure because of a high electron mobility in the n-type AlInSb material. The output optical power of laterally injected LEDs were investigated as a function of the device geometry by COMSOL simulations and confirmed by experimental results.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131001128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer 以Nb为氧交换层的HfO2中的电阻开关行为
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038714
Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, K. Belay, R. Elliman
{"title":"Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer","authors":"Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, K. Belay, R. Elliman","doi":"10.1109/COMMAD.2014.7038714","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038714","url":null,"abstract":"The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130003252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication and characterization of few-hole quantum dots in undoped GaAs/AlGaAs heterostructures 未掺杂GaAs/AlGaAs异质结构中少空穴量子点的制备与表征
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038683
D. Q. Wang, O. Klochan, I. Farrer, D. Ritchie, A. Hamilton
{"title":"Fabrication and characterization of few-hole quantum dots in undoped GaAs/AlGaAs heterostructures","authors":"D. Q. Wang, O. Klochan, I. Farrer, D. Ritchie, A. Hamilton","doi":"10.1109/COMMAD.2014.7038683","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038683","url":null,"abstract":"We fabricated a single hole quantum dot on a AlGaAs/GaAs heterostructure with no intentional doping. The hole quantum dot shows varying charging energy and clear excited states, which suggests that it is in the last-few-hole regime. By changing the confinement of the barrier gates, the device can also be defined as a double quantum dot with tunable interdot coupling.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125499304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical analysis of fluctuation phenomena in HOT HgCdTe barrier detectors 热态碲化镓势垒探测器中涨落现象的数值分析
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038687
M. Kopytko, A. Jóźwikowska, K. Jóźwikowski, A. Martyniuk, J. Antoszewski, L. Faraone
{"title":"Numerical analysis of fluctuation phenomena in HOT HgCdTe barrier detectors","authors":"M. Kopytko, A. Jóźwikowska, K. Jóźwikowski, A. Martyniuk, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2014.7038687","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038687","url":null,"abstract":"The effect of different noise sources on the noise current in HgCdTe barrier detectors, working at near-room temperatures, was analyzed theoretically. The set of transport equations for fluctuations was solved to obtain spectral densities of fluctuations of electrical potential, quasi-Fermi levels, and temperature. The spectral density of both, shot and lf fluctuations of generation-recombination processes were taken into account in the model to analyze their effect on noise currents. Effect of dislocations, metal site vacancies, as well as 1/f mobility fluctuations, thermal and diffusion noises have been included in the model. The built-in electric field regions have been identified as sources of shot GR noise and 1/f mobility noises. The barrier area is the main source of 1/f current noise in HgCdTe barrier detectors. The presence of misfit dislocations in the depletion regions results in the growth of dark current and hence the growth of noise current which is always proportional to the total dark current.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"3 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114135705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New trends in infrared and terahertz detectors 红外和太赫兹探测器的新趋势
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038694
Antoni Rogalski
{"title":"New trends in infrared and terahertz detectors","authors":"Antoni Rogalski","doi":"10.1109/COMMAD.2014.7038694","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038694","url":null,"abstract":"Fundamental and technological issues associated with the development and exploitation of the most advanced infrared and terahertz technologies are discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices, barrier detectors, uncooled thermal bolometers, extrinsic detectors (including blocked impurity band detectors), and novel THz detectors.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125211068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure 金属-绝缘体-半导体结构中SiNx-HgCdTe界面的表征
2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI: 10.1109/COMMAD.2014.7038653
J. Zhang, G. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone
{"title":"Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure","authors":"J. Zhang, G. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2014.7038653","DOIUrl":"https://doi.org/10.1109/COMMAD.2014.7038653","url":null,"abstract":"In this paper, we report results of a study of SiN<sub>x</sub> films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiN<sub>x</sub> films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiN<sub>x</sub>/n-Hg<sub>0.68</sub>Cd<sub>0.32</sub>Te metal-insulator-semiconductor structures indicated that Si-rich SiN<sub>x</sub> films deposited at 100°C can be employed as electrical passivation layers.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133939871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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