Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, K. Belay, R. Elliman
{"title":"以Nb为氧交换层的HfO2中的电阻开关行为","authors":"Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, K. Belay, R. Elliman","doi":"10.1109/COMMAD.2014.7038714","DOIUrl":null,"url":null,"abstract":"The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer\",\"authors\":\"Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, K. Belay, R. Elliman\",\"doi\":\"10.1109/COMMAD.2014.7038714\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038714\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038714","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer
The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.
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