未掺杂GaAs/AlGaAs异质结构中少空穴量子点的制备与表征

2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI:10.1109/COMMAD.2014.7038683

D. Q. Wang, O. Klochan, I. Farrer, D. Ritchie, A. Hamilton

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引用次数: 0

摘要

我们在没有掺杂的情况下在AlGaAs/GaAs异质结构上制备了单孔量子点。空穴量子点显示出不同的充电能量和清晰的激发态，表明它处于最后几个空穴状态。通过改变势垒门的限制，该器件也可以被定义为具有可调谐点间耦合的双量子点。

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Fabrication and characterization of few-hole quantum dots in undoped GaAs/AlGaAs heterostructures

We fabricated a single hole quantum dot on a AlGaAs/GaAs heterostructure with no intentional doping. The hole quantum dot shows varying charging energy and clear excited states, which suggests that it is in the last-few-hole regime. By changing the confinement of the barrier gates, the device can also be defined as a double quantum dot with tunable interdot coupling.

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2014 Conference on Optoelectronic and Microelectronic Materials & Devices

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