L. W. V. van Beveren, E. Panchenko, N. Anachi, L. Hyde, D. Smith, T. James, A. Roberts, J. McCallum
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Indium tin oxide film characterization using the classical Hall Effect
We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.
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