Resistive switching behavior in HfO2 with Nb as an oxygen exchange layer

2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI:10.1109/COMMAD.2014.7038714

Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li, Dinesh Kumar Venkatachalam, K. Belay, R. Elliman

引用次数: 4

Abstract

The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.

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以Nb为氧交换层的HfO2中的电阻开关行为

研究了铌作为氧交换层在HfO2基电阻式随机存取存储器(ReRAM)中的作用。通过比较Pt/HfO2/Pt和Pt/HfO2/Nb ReRAM器件的性能，证明了Nb的优势。前者显示出只有单极电阻开关，而后者显示出一系列的开关模式，包括稳定的双极操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 Conference on Optoelectronic and Microelectronic Materials & Devices

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