Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure

Abstract

In this paper, we report results of a study of SiN_x films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiN_x films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiN_x/n-Hg_0.68Cd_0.32Te metal-insulator-semiconductor structures indicated that Si-rich SiN_x films deposited at 100°C can be employed as electrical passivation layers.