宽波导激光器中有源区域的定位，以优化空穴注入

2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 2014-12-01 DOI:10.1109/COMMAD.2014.7038647

M. Lysevych, H. Tan, F. Karouta, C. Jagadish

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引用次数: 0

摘要

在宽波导激光器中，由于电子和空穴之间迁移率的显著差异，有源区位置对器件的性能有显著影响。当有源区靠近p包层时，激光器的输出功率增加了25%。

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Positioning of the active region in broad-waveguide laser for optimized hole injection

The active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.

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2014 Conference on Optoelectronic and Microelectronic Materials & Devices

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