J. Zhang, G. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone
{"title":"金属-绝缘体-半导体结构中SiNx-HgCdTe界面的表征","authors":"J. Zhang, G. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2014.7038653","DOIUrl":null,"url":null,"abstract":"In this paper, we report results of a study of SiN<sub>x</sub> films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiN<sub>x</sub> films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiN<sub>x</sub>/n-Hg<sub>0.68</sub>Cd<sub>0.32</sub>Te metal-insulator-semiconductor structures indicated that Si-rich SiN<sub>x</sub> films deposited at 100°C can be employed as electrical passivation layers.","PeriodicalId":175863,"journal":{"name":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure\",\"authors\":\"J. Zhang, G. Umana-Membreno, R. Gu, W. Lei, J. Antoszewski, J. Dell, L. Faraone\",\"doi\":\"10.1109/COMMAD.2014.7038653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report results of a study of SiN<sub>x</sub> films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiN<sub>x</sub> films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiN<sub>x</sub>/n-Hg<sub>0.68</sub>Cd<sub>0.32</sub>Te metal-insulator-semiconductor structures indicated that Si-rich SiN<sub>x</sub> films deposited at 100°C can be employed as electrical passivation layers.\",\"PeriodicalId\":175863,\"journal\":{\"name\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"volume\":\"132 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Conference on Optoelectronic and Microelectronic Materials & Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.2014.7038653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Conference on Optoelectronic and Microelectronic Materials & Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2014.7038653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterisation of SiNx-HgCdTe interface in metal-insulator-semiconductor structure
In this paper, we report results of a study of SiNx films deposited on HgCdTe epitaxial layers. Hydrogenated amorphous SiNx films were deposited by inductively-coupled plasma-enhanced chemical vapour deposition at relatively low substrate temperatures (80°C-100°C). The capacitance-voltage characteristics of SiNx/n-Hg0.68Cd0.32Te metal-insulator-semiconductor structures indicated that Si-rich SiNx films deposited at 100°C can be employed as electrical passivation layers.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
